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    5A SMD TRANSISTOR Search Results

    5A SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5A SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.


    Original     		PDF FCX1151A -250mA -10mA -50mA, 50MHz -20mA

    2SB1120

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE sat max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’


    Original     		PDF 2SB1120 25saturation -500mA -50mA 2SB1120

    MARKING SMD PNP TRANSISTOR 2a

    Abstract: smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.


    Original     		PDF FCX1151A -250mA -10mA -50mA, 50MHz -20mA MARKING SMD PNP TRANSISTOR 2a smd transistor 2A FCX1151A MARKING 25 SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A

    ja smd

    Abstract: CZT127 KZT127
    Text: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2


    Original     		PDF KZT127 CZT127) OT-223 -30mA -20mA ja smd CZT127 KZT127

    2SD1949

    Abstract: R Y SMD TRANSISTOR
    Text: Transistors IC SMD Type Medium Power Transistor 2SD1949 Features High current. IC=5A Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD1949 150mA 50Min -20mA 100MHz 150mA/15mA 2SD1949 R Y SMD TRANSISTOR

    smd npn darlington

    Abstract: CZT122 KZT122
    Text: Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 CZT122 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2


    Original     		PDF KZT122 CZT122) OT-223 smd npn darlington CZT122 KZT122

    npn smd 2a

    Abstract: FZT869
    Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).


    Original     		PDF FZT869 OT-223 150mA 300mA 100mA, 50MHz 100mA npn smd 2a FZT869

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT849 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).


    Original     		PDF FZT849 OT-223 300mA 100mA, 50MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1949 Features High current. IC=5A Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD1949 150mA -20mA 100MHz 150mA/15mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak). +0.1 3.00-0.1 +0.15 1.65-0.15 Features


    Original     		PDF FZT869 OT-223 150mA 300mA 100mA, 50MHz 100mA

    5g smd transistor

    Abstract: SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H


    Original     		PDF OT-23 BC807 BC808 BC807â BC807-40 BC808â 5g smd transistor SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23

    smd transistor 5c sot-23

    Abstract: smd transistor 5d sot-23 smd 5H transistor SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c bc807 5g smd transistor Transistor - CL 100 SMD TRANSISTOR MARKING 5G 5A SMD MARKING SOT23 BC807-40
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H


    Original     		PDF OT-23 BC807 BC808 BC807 BC807-40 BC808 smd transistor 5c sot-23 smd transistor 5d sot-23 smd 5H transistor SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c bc807 5g smd transistor Transistor - CL 100 SMD TRANSISTOR MARKING 5G 5A SMD MARKING SOT23 BC807-40

    6a smd transistor

    Abstract: fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor
    Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current.


    Original     		PDF FZT851 OT-223 300mA 100mA, 50MHz 100mA 6a smd transistor fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor

    smd 5H transistor

    Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H


    Original     		PDF OT-23 BC807 BC808 BC807 BC807-40 BC808 smd 5H transistor 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor

    FZT853

    Abstract: npn smd 2a smd transistor 2A 6a smd transistor
    Text: Transistors SMD Type NPN Silicon Planar High Current Transistor FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3


    Original     		PDF FZT853 OT-223 300mA* 100mA, 50MHz 100mA FZT853 npn smd 2a smd transistor 2A 6a smd transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 High current. IC=5A . 2 Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. +0.1 0.95-0.1


    Original     		PDF 2SD1484K OT-23 150mA 150mA/15mA -20mA, 100MHz

    transistor smd YR

    Abstract: yq smd transistor sot-23 Marking yr marking YQ 2SD1484K
    Text: Transistors IC SMD Type Medium Power Transistor 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low saturation voltage, typically VCE sat =0.1V at IC / IB=150mA / 15mA. 0.55 High current.(IC=5A). 2 +0.1 0.95-0.1


    Original     		PDF 2SD1484K OT-23 150mA 150mA/15mA -20mA, 100MHz transistor smd YR yq smd transistor sot-23 Marking yr marking YQ 2SD1484K

    FMMT734

    Abstract: smd transistor 5k
    Text: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1


    Original     		PDF FMMT734 OT-23 625mW -10mA, -100mA, -10mA 100MHz -500mA, FMMT734 smd transistor 5k

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1


    Original     		PDF FMMT734 OT-23 625mW -10mA, -100mA, -10mA 100MHz -500mA,

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FZT853 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 6 Amps continuous current, up to 20 Amps peak current


    Original     		PDF FZT853 OT-223 300mA* 100mA 100mA, 50MHz

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features


    Original     		PDF FZT851 OT-223 300mA 100mA, 50MHz 100mA

    DNT04

    Abstract: DNT04S0A0R03NFA DNT04S0A0S03NFA DNT04S0A0S05NFA
    Text: FEATURES High Efficiency: 93%@ 5Vin, 3.3V/5A out Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Standard footprint and pinout Resistor-based trim Output voltage programmable from 0.75V to 3.63V via external resistors


    Original     		PDF EN60950 73/23/EEC 93/68/EECpending DNT04, x6220 DNT04SIP5A DNT04 DNT04S0A0R03NFA DNT04S0A0S03NFA DNT04S0A0S05NFA

    DNT04

    Abstract: DNT04S0A0R03NFA DNT04S0A0S03NFA DNT04S0A0S05NFA
    Text: FEATURES High Efficiency: 93%@ 5Vin, 3.3V/5A out Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Standard footprint and pinout Resistor-based trim Output voltage programmable from 0.75V to 3.3V via external resistors


    Original     		PDF EN60950 73/23/EEC 93/68/EECpending DNT04, x6220 DNT04SIP5A DNT04 DNT04S0A0R03NFA DNT04S0A0S03NFA DNT04S0A0S05NFA

    Untitled

    Abstract: No abstract text available
    Text: FEATURES High Efficiency: 92%@ 5Vin, 3.3V/5A out Small size and low profile: 0.80” x 0.45” x 0.27” SMD 0.90” x 0.40” x 0.25” (SIP) Standard footprint and pinout Resistor-based trim Output voltage programmable from 0.75V to 3.3V via external resistors


    Original     		PDF EN60950 73/23/EEC 93/68/EECpending DNT04, x6220 DNT04SMD5A