STPS5L40
Abstract: STPS5L40RL
Text: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
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STPS5L40
DO-201AD,
DO-201AD
STPS5L40
STPS5L40RL
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STPS5L40
Abstract: STPS5L40RL
Text: STPS5L40 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS Negligible switching losses Low forward voltage drop for higher efficiency. Low thermal resistance • ■ ■ DESCRIPTION
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STPS5L40
DO-201AD,
DO-201AD
STPS5L40
STPS5L40RL
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STPS5L40
Abstract: STPS5L40-C2
Text: STPS5L40-C2 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
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STPS5L40-C2
DO-201AD,
DO-201AD
STPS5L40
STPS5L40-C2
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STPS5L40
Abstract: STPS5L40-C2
Text: STPS5L40-C2 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 40 V Tj (max) 150°C VF (max) 0.44 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY. LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
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STPS5L40-C2
DO-201AD,
DO-201AD
STPS5L40
STPS5L40-C2
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PDS540
Abstract: No abstract text available
Text: PDS540Q Green Product Summary VR V IF (A) 40 5.0 5A SCHOTTKY BARRIER RECTIFIER POWERDI Features and Benefits VF MAX (V) @ +25°C 0.52 IR MAX (mA) @ +25°C 0.25 • Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency
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PDS540Q
PDS540
DS36912
PDS540
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
schottky diode 60V 5A
30A high speed diode
Schottky Diode 20V 5A
Schottky diode high reverse voltage
marking code 1A diode
Schottky Diode 40V 2A
Schottky Barrier 3A
diode schottky code 10
SCHOTTKY BARRIER DIODE
ERG81-004
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Untitled
Abstract: No abstract text available
Text: AO4701 30V P-Channel MOSFET with Schottky Diode General Description Product Summary The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional
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AO4701
AO4701
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14900AA-N •General description ■Features ELM14900AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14900AA-N
ELM14900AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14906AA-N •General description ■Features ELM14906AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=7A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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ELM14906AA-N
ELM14906AA-N
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Untitled
Abstract: No abstract text available
Text: AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch
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AO4900
AO4900
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET with schottky diode ELM14701AA-N •General description ■Features ELM14701AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 49mΩ (Vgs=-10V)
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ELM14701AA-N
ELM14701AA-N
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Untitled
Abstract: No abstract text available
Text: AO4906 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4906 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch
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AO4906
AO4906
AO4906L
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AO4900
Abstract: AO4900L DIODE SCHOTTKY 60A 45V
Text: AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch
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AO4900
AO4900
AO4900L
DIODE SCHOTTKY 60A 45V
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14904AA-N •General description ■Features ELM14904AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14904AA-N
ELM14904AA-N
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AO4904
Abstract: AO4904L
Text: AO4904 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4904 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and
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AO4904
AO4904
AO4904L
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AO4701
Abstract: No abstract text available
Text: AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
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AO4701
AO4701
AO4701L
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sony TA-70
Abstract: AO4900 S1 DIODE schottky
Text: AO4900 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4900 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch
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AO4900
AO4900
sony TA-70
S1 DIODE schottky
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AO4906
Abstract: AO4906L sony TA-70
Text: AO4906 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4906 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch
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AO4906
AO4906
AO4906L
sony TA-70
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AO4902
Abstract: AO4902L
Text: AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features General Description VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) The AO4902 uses advanced trench technology to provide
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AO4902
AO4902
AO4902L
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Untitled
Abstract: No abstract text available
Text: AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
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AO4701
AO4701
AO4701L
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AO4701
Abstract: aos Lot Code Week
Text: July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the
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AO4701
AO4701
aos Lot Code Week
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FET MARKING QG
Abstract: IRF7901D1 FET MARKING
Text: PD- 93844B IRF7901D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Q1 S ource Q1 Gate
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93844B
IRF7901D1
FET MARKING QG
IRF7901D1
FET MARKING
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Untitled
Abstract: No abstract text available
Text: LS54/LS545 Surface Mount Schottky Rectifier Reverse Voltage 40/45V Forward Current 5A Features • • • • • • • Schottky barrier diodes Low forward voltage drop Low leakage current Moisture sensitivity: M i t iti it level l l 1, 1 per J-STD-020
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LS54/LS545
40/45V
J-STD-020
AEC-Q101
LS545
03-Rev
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