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    5962-86063 15 Search Results

    5962-86063 15 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.875 INCH, DIP-16 Visit Rochester Electronics LLC Buy
    5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL, 0.250 X 0.375 INCH, FP-16 Visit Rochester Electronics LLC Buy
    5962-87518013A Rochester Electronics LLC Interrupt Controller, NMOS, CQCC28, CERAMIC, LCC-28 Visit Rochester Electronics LLC Buy
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    5962-86063 15 Price and Stock

    Teledyne e2v 5962-8606315XA

    EPROM 256Kbit 32Kx8 5V 150ns 28-Pin CDIP (Alt: 5962-8606315XA)
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    Avnet Silica 5962-8606315XA 18 Weeks 250
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    Teledyne e2v 5962-8606315XA 14 Weeks
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    Teledyne e2v 5962-8606315QXA

    PROM, UV ERASABLE, 32K X 8, 150 NS ACCESS TIME
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    Teledyne e2v 5962-8606315QXA 14 Weeks
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    Teledyne e2v 5962-8606315YA

    PROM, UV ERASABLE, 32K X 8, 150 NS ACCESS TIME
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    Teledyne e2v 5962-8606315YA 14 Weeks
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    Teledyne e2v 5962-8606315UA

    PROM, UV ERASABLE, 32K X 8, 150 NS ACCESS TIME
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    Teledyne e2v 5962-8606315UA 14 Weeks
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    Teledyne e2v 5962-8606315QYA

    PROM, UV ERASABLE, 32K X 8, 150 NS ACCESS TIME
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Teledyne e2v 5962-8606315QYA 14 Weeks
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    5962-86063 15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5962-8606301XA

    Abstract: SMJ27C256-25JM 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256 SMJ27C256-30JM
    Text: UVEPR OM UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063


    Original     		PDF SMJ27C256 32-Pin MIL-STD-883 400-mV SMJ27C256-15JM SMJ27C256-17JM SMJ27C256-20JM SMJ27C256-25JM SMJ27C256-30JM 5962-8606301XA SMJ27C256-25JM 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256 SMJ27C256-30JM

    5962-8606301XA

    Abstract: 5962-8606301 5962-8606305XA UVEPROM 5962-8606302XA SMD MARKING CODE A12 General Instrument 27c256 SMJ27C256-25JM code eprom smd smd code a12
    Text: UVEPROM SMJ27C256 AS27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063


    Original     		PDF SMJ27C256 AS27C256 28-Pin MIL-STD-883 400-mV J27C256-25JM SMJ27C256-30JM 5962-8606305XA 5962-8606304XA 5962-8606301XA 5962-8606301XA 5962-8606301 5962-8606305XA UVEPROM 5962-8606302XA SMD MARKING CODE A12 General Instrument 27c256 SMJ27C256-25JM code eprom smd smd code a12

    5962-8606301XA

    Abstract: SMJ27C256 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256-30JM SMJ27C256-17JM
    Text: UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063 • MIL-STD-883


    Original     		PDF SMJ27C256 32-Pin MIL-STD-883 400-mV SMJ27C256-15JM SMJ27C256-17JM SMJ27C256-20JM SMJ27C256-25JM SMJ27C256-30JM 5962-8606301XA SMJ27C256 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256-30JM SMJ27C256-17JM

    smd code marking A8

    Abstract: WS27C256L WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
    Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA


    Original     		PDF WS27C256L WS27C256L MIL-STD-883C WS27C256L-12DMB* WS27C256L-12TMB* WS27C256L-15DMB* WS27C256L-15TMB* smd code marking A8 WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20

    WS27C256L

    Abstract: capacitor, 1000 microfarad and 35 volts WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
    Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA


    Original     		PDF WS27C256L WS27C256L MIL-STD-883C WS27C256L-12DMB* WS27C256L-12TMB* WS27C256L-15DMB* WS27C256L-15TMB* capacitor, 1000 microfarad and 35 volts WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20

    57C256f

    Abstract: military part marking symbols 57C256 WS57C256F-55DMB WS57C256F-35J 57C256F-55 WS57C256F WS57C256F-35 WS57C256F-45 WS57C256F-55
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • Low Power Consumption


    Original     		PDF WS57C256F WS57C256F MIL-STD-883C 57C256FB 57C256f military part marking symbols 57C256 WS57C256F-55DMB WS57C256F-35J 57C256F-55 WS57C256F-35 WS57C256F-45 WS57C256F-55

    Untitled

    Abstract: No abstract text available
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — t CE = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 • Low Power Consumption


    Original     		PDF WS57C256F WS57C256F MIL-STD-883C 57C256FB

    Untitled

    Abstract: No abstract text available
    Text: WS27C256L Military 32Kx 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC 120 ns Access Time EPI Processing • Fast Programming - • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000 Volts • 300 Mil DIP or Standard 600 Mil DIP


    OCR Scan     		PDF WS27C256L WS27C256L cos200 MIL-STD-883C MIL-STD-883C WS27C256L-12CMB*

    Untitled

    Abstract: No abstract text available
    Text: WS27C256F PRELIMINARY MILITARY 32K x 8 CMOS EPROM • KEY FEATURES * EPI Processing Fast Access Time — 90 ns Over Full Mil Temp Range — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000V


    OCR Scan     		PDF WS27C256F WS27C256F WS27C256F-90CMB WS27C256F-90DMB WS27C256F-90LMB MIL-STD-883C

    S27C256

    Abstract: No abstract text available
    Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC — 120 ns Access Time • EPI Processing — Latch-Up Immunity to 200 mA • Fast Programming — ESD Protection Exceeds 2000 Volts • DESC SMD No. 5962-86063


    OCR Scan     		PDF WS27C256L S27C256L MIL-STD-883C WS27C256L-12DMB* WS27C256L-12TMB* WS27C256L-15DMB* WS27C256L-15TMB* S27C256

    S27C256

    Abstract: No abstract text available
    Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • Ceramic Leadless Chip Carrier CLLCC • High Performance CMOS — 120 ns Access Time • EPI Processing • Fast Programming — Latch-Up Immunity to 200 mA • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000 Volts


    OCR Scan     		PDF WS27C256L WS27C256L MIL-STD-883C MIL-STD-883C WS27C256L-12CMB* WS27C256L-12DMB* S27C256

    Untitled

    Abstract: No abstract text available
    Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time — Latch-Up Immunity to 200 mA • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP


    OCR Scan     		PDF WS27C256L S27C256L MIL-STD-883C MIL-STD-883C C256L-12C WS27C256L-12DMB*

    28-PIN CERDIP

    Abstract: S57 SMD
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — tACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption


    OCR Scan     		PDF WS57C256F S57C256F 57C256FB 28-PIN CERDIP S57 SMD

    Untitled

    Abstract: No abstract text available
    Text: = = = — —' — — m S4E » — oooia^Q 203 • iiiia f WS57C256F WAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • EPI Processing • Fast Access Time — 35 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063


    OCR Scan     		PDF WS57C256F WS57C256F MIL-STD-883C

    57C256

    Abstract: wsi 57c256f-55 wsi 57c256f-45
    Text: WS57C256F HIGH SPEED 32Kx 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — — — Up to 200 mA l ACC = 35 ns = 35 ns • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 • Low Power Consumption


    OCR Scan     		PDF WS57C256F S57C256F-45C WS57C256F-45D WS57C256F-45P WS57C256F-45T WS57C256F-55C WS57C256F-55CMB WS57C256F-55D WS57C256F-55DM 57C256 wsi 57c256f-55 wsi 57c256f-45

    57C256

    Abstract: 57C256F 57C25 57C256F-70 57c256f-45
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • Immune to Latch-UP — *ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • Low Power Consumption


    OCR Scan     		PDF WS57C256F stan256F-45T 256F-55C 256F-55D 256F-55J 256F-55P 256F-55T 57C256 57C256F 57C25 57C256F-70 57c256f-45

    57C256

    Abstract: 57C256f WS57C256F-55DMB wsi 57c256f-55 WS57C256F-55 WS57C256F WS57C256F-35 WS57C256F-45 WS57C256F-70 57c256f-70
    Text: WS57C256F HIGH SPEED 32Kx 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — *ACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption


    OCR Scan     		PDF WS57C256F WS57C256F MIL-STD-883C WS57C256F-70CM WS57C256F-70D WS57C256F-70DMB* WS57C256F-70J WS57C256F-70JI 57C256 57C256f WS57C256F-55DMB wsi 57c256f-55 WS57C256F-55 WS57C256F-35 WS57C256F-45 WS57C256F-70 57c256f-70

    Untitled

    Abstract: No abstract text available
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • KEY FEATURES • Immune to Latch-UP Fast Access Time — t Ac c = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP andPLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption


    OCR Scan     		PDF WS57C256F S57C256F MIL-STD-883C WS57C256F-70J WS57C256F-70JI WS57C256F-70T WS57C256F 57C256FB

    57C256F-70

    Abstract: No abstract text available
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • Immune to Latch-UP — t Ac c = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts * Available in 300 Mil DIP and PLDCC * DESC SMD No. 5962-86063 — t CE = 35 ns * • Low Power Consumption


    OCR Scan     		PDF WS57C256F WS57C256F MIL-STD-883C WS57C256F-70J WS57C256F-70JI WS57C256F-70T S57C256F 57C256FB 57C256F-70

    Untitled

    Abstract: No abstract text available
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts — t CE = 35 ns • Low Power Consumption • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063


    OCR Scan     		PDF WS57C256F WS57C256F stand28 MIL-STD-883C WS57C256F-70J WS57C256F-70JI WS57C256F-70T 57C256FB

    Untitled

    Abstract: No abstract text available
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time * Immune to Latch-UP — l ACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP andPLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption


    OCR Scan     		PDF WS57C256F thWS57C256F-35L WS57C256F-35P WS57C256F-35T WS57C256F-45C WS57C256F-45D WS57C256F-45P WS57C256F-45T WS57C256F-55C

    57C256

    Abstract: No abstract text available
    Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • EPI Processing • Fast Access Time — 35 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 • Standard EPROM Pinout GENERAL DESCRIPTION The W S57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is


    OCR Scan     		PDF WS57C256F S57C256F WS57C256F MIL-STD-883C 57C256

    Untitled

    Abstract: No abstract text available
    Text: WS57C256F MILITARY HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing 55 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 • Standard EPROM Pinout GENERAL DESCRIPTION The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is


    OCR Scan     		PDF WS57C256F WS57C256F MIL-STD-883C WS57C256F-55CMB WS57C256F-55DMB WS57C256F-55TMB

    Untitled

    Abstract: No abstract text available
    Text: WS27C256F MILITARY 32K x 8 CMOS EPROM KEY FEATURES • Fast A ccess Tim e • EPI P rocessing — 90 ns O ver Full Mil Te m p R ange — Latch-up Im m unity Up to 200 mA • Low Pow er C onsum ption — ESD P rote ction E xceed s 2000V • DESC SMD No. 5962-86063


    OCR Scan     		PDF WS27C256F