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    5961 B SJ Search Results

    5961 B SJ Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    LTC1596-1BCSW#PBF Analog Devices Serial 16-B Mult DACs Visit Analog Devices Buy
    LTC1596-1BCSW#TRPBF Analog Devices Serial 16-B Mult DACs Visit Analog Devices Buy
    LTC1596-1BISW#PBF Analog Devices Serial 16-B Mult DACs Visit Analog Devices Buy
    LTC1596-1BISW#TRPBF Analog Devices Serial 16-B Mult DACs Visit Analog Devices Buy

    5961 B SJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    CM05B

    Abstract: D65084 1N78 1N5764 1N5764MR C65101
    Text: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,


    Original     		PDF L-s-19500 19November TYPE1N5764, 1N5764M 1N5764MR DMR1426 JAN66WHICH CM05B D65084 1N78 1N5764 1N5764MR C65101

    2N501A

    Abstract: No abstract text available
    Text: MI L- S-19500/62B AMENDMENT 3 22 March 1982 SUPERSEDING AMEN O14ENT 2 6 July 1970 ● I MILITARY SEMICONDUCTOR TRANSISTOR, PNP, TYPE 2N501A a part of This amendment forms dated 26 July 1968, and is approved of the Department of Defense. Military for 1.4, cob~ column:


    Original     		PDF S-19500/62B O14ENT 2N501A L-s-19500/62B 2N501A

    N2150

    Abstract: 2n7151 cage 11851 vfd S1 DELTA t41l FCABLE11 2N2151 546i 00CU Transistor CR64
    Text: I ● r I I Ill e documentation ana process conversion medsures necessary to comply .itn this revision shall be 1991. co.pletea by 10 C&ok I I I I HIL-S-1950+3/Z77D I 10 JLUIe 1991 SUPERSEDING MI L- S-19 SO0/277C 12 August 1968 MILITARY SEH!CONCYUCTOR SPECIFICATIOW


    Original     		PDF HIL-S-1950 3/Z77D SO0/277C 2N21S0 2N2151 S-195CW. 2N2150 2N7151 N2150 2n7151 cage 11851 vfd S1 DELTA t41l FCABLE11 546i 00CU Transistor CR64

    STR 6267

    Abstract: str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148
    Text: DISTRIBUTORS July 1997 ALABAMA Hamilton Hallmark 4890 University Sq., #1 Huntsville, AL 35805 P#205/837-8700 F#205/830-2565 Marshall 3313 Memorial Pkwy So., 150 Huntsville, AL 35803 P#205/881-9235 F#205/881-1490 Pioneer 4835 University Square Huntsville, AL 35816


    Original     		PDF 51itzerland 3-15F, Omraniye-81257-Omraniye STR 6267 str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148

    BS2779 BSP THREAD

    Abstract: IEC60079-14 EX-35-B-1-0-20-M20 M32 nylon cable gland 602 GB Series AMPHENOL dts01 galvanised conduit hazardous area ZP-C-2520-12 Radsok Amphenol Radsok
    Text: Amphenol Cable Glands and Cord Grips 12-055 Amphenol Table of Contents Introduction Amphenol® Cable Glands Page Number 1 2-3 ATEX Approved Glands Featuring Elastometric Seals EX-20 4-5 EX-25 6-7 EE-30 8-9 EX-35 10-11 EX-40 12-13 EX-45 14-15 EE-RG 16-17


    Original     		PDF EX-20 EX-25 EE-30 EX-35 EX-40 EX-45 EX-50 EX-55 EX-60 EX-65 BS2779 BSP THREAD IEC60079-14 EX-35-B-1-0-20-M20 M32 nylon cable gland 602 GB Series AMPHENOL dts01 galvanised conduit hazardous area ZP-C-2520-12 Radsok Amphenol Radsok

    Untitled

    Abstract: No abstract text available
    Text: r ^ r A /Z H Hl = j rF ^n - i^ U V U n U L ^ iU ^ L rn J January 7, 1998 RECTIFIER, up to 150V, 1.8A, 30ns 1N6073 iN Rn74 1N6074 1N6075 FF05 f f in FF10 FF15 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE


    OCR Scan     		PDF 1N6073 1N6074 1N6075 TEL805-498-2111 1N6075

    Scans-0016000

    Abstract: No abstract text available
    Text: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­


    OCR Scan     		PDF 00D0125 MIL-S-19500/226B MIL-S-19500/226A 1N3666U) MIL-S-19500. -55aC HIL-S-19500/226B S961-1161-1) Scans-0016000

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Alabama A ll Am erican Huntsville, AL 205-837-1555 Future Electronics Huntsville, AI. 205-830-2322 N u H orizons Huntsville, AL 205-722-9330 Arizona Future Electronics Phoenix, AZ 602-968-7140 C alifornia North A ll Am erican San Jose, CA 408-441-1300


    OCR Scan     		PDF

    2N1042

    Abstract: 2N1043 2N1044 2N1045 Germanium power 3011 fe
    Text: ê MJL-S-19500/137C 2l_Jung^9,n _ SUPERSEDING MIL-S-19500/137B 7 A p ril 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, POWER f\AC i irL O ft\fi r\An rrnti/MT/^ti m n u u u n Oxti ¿¿'iau?«; This specification Is m andatory fo r use by a ll D epart­


    OCR Scan     		PDF ML-S-19500/137C MIL-S-19500/137B 2N1042 2N1043 2N1044 2N1045 2N1043 2N1044 Germanium power 3011 fe

    JAN 1N4150-1

    Abstract: JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 1N4150UR-1 3pda Q033b D0213 Scans-0016000
    Text: MIL SPECS H4 E D 00G0125 Q033bfl7 [The documentationand process conversion | Imeasures necessary to comply with this | |revision shaLl be completed by 23 MAR 94. |


    OCR Scan     		PDF D0DD125 0033bfi? MIL-S-19500/231F MIL-S-19500/231 1N3600, 1N4150-1, 1N4150UR-1 JANSIN4150-1 MIL-S-19500/609 JANS1N6640 JAN 1N4150-1 JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 3pda Q033b D0213 Scans-0016000

    OC 74 germanium transistor

    Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
    Text: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart­ m ents and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/125C -S-19500/125B 2N1500 OC 74 germanium transistor 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz

    str g 5551

    Abstract: str G 5551 47 D-85540 a1232 R-17778 D-85551 D-12277 str f 6655 Taiwan Oasis Enterprise Co., LTD
    Text: /~ \T P rj= E - ^ / 7 \ /A j U a Sales Offices, Distributors & Representatives May 1999 Altera Regional Offices NORTHERN CALIFORNIA CORPORATE HEADQUARTERS Altera Corporation 101 Innovation Drive San Jose, CA 95134 TEL: (408)544-7000 FAX: (408)544-7755 Altera Corporation


    OCR Scan     		PDF B-201 RUS-127434 TR-91090/Istanbul str g 5551 str G 5551 47 D-85540 a1232 R-17778 D-85551 D-12277 str f 6655 Taiwan Oasis Enterprise Co., LTD

    2N760A

    Abstract: MC 331 transistor 2N757A transistor WFA 2N759A 945 U3d marking MIL-S-19500/218
    Text: MIL-S-19500/218A 23 November 1966 SUPEKSMJING M IL-S-19500/218 SigC 11 October 1961 (See 6 .4) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N750A AND 2N760A This specification is mandatory for use by a ll Depart­


    OCR Scan     		PDF MIL-S-19500/218A MIL-S-19500/218 2N757A, 2N759A 2N760A 2N757A 2N760A MC 331 transistor transistor WFA 945 U3d marking MIL-S-19500/218

    003431b

    Abstract: 1N3038B HA 4016 1N3016B 1N3016B-1 1N3051B 1N3821A 1N3821A-1 1N3828A JANTX1N3821A-1
    Text: MIL SPEC S 44E D • 0 0 0 0 12 5 0 Q 3 4 3G 7 05b ■ MILS The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 March 1994 INCH-POUND MIL-S -19500/115 H 20 December 1993 SUPERSEDING HIL-S-19500/115G


    OCR Scan     		PDF QQ00125 0Q343G7 MIL-S-19500/115H MIL-S-19500/115G 1N3821A 1N3828A, 1N3016B 1N3051B, 1N3821A-1 1N3828A-1, 003431b 1N3038B HA 4016 1N3016B-1 1N3051B 1N3828A JANTX1N3821A-1

    diode cc 3053

    Abstract: PIC602 lc dash 2 b-5 PIC600 sol 4011 be 89100-01TX 89100-03TX cc 3053 OSTX 89100-02TX
    Text: i REVISIONS DATE D E S C R IP T IO N LTR APPRO VED Selected item drawing REV PA 0E REV STA TU S OF PA G ES REV PA G ES Original date of drawing: 7 August 1990 1 2 3 4 5 6 PREPARED C H ECKED 7 8 9 10 11 12 13 14 15 16 17 BY IEFENSE ELECTRINICS SIPPLV CENTER


    OCR Scan     		PDF 5961-E007-1 89100-01TX, PIC600 89100-02TX, PIC601 89100-03TX, PIC602 89100-04TX, PIC610 89100-05TX, diode cc 3053 lc dash 2 b-5 sol 4011 be 89100-01TX 89100-03TX cc 3053 OSTX 89100-02TX

    2N5807

    Abstract: 2N5806 thyristor TAG 20 600 2N5809 2N5808 KS 300 A TRIODE thyristors 2N58 thyristor tag 83 thyristor circuit 1970 lm 4221 ii
    Text: M IL-S-19500/U6 20 Augngt 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRIODE THYRISTOR BI-DIRECTIONAL ,SILICON, TYPES 2N58CS THROUGH 2N5S'09 This specification Is mandatory for use by all D epart­ ments and Agencies of the Department of Defense. I.


    OCR Scan     		PDF MIL-S-19500/ MIL-S-19500 2N5807 2N5806 thyristor TAG 20 600 2N5809 2N5808 KS 300 A TRIODE thyristors 2N58 thyristor tag 83 thyristor circuit 1970 lm 4221 ii

    transistor 2N 2222 h 331

    Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
    Text: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi


    OCR Scan     		PDF MIL-S-19500/447A MIL-S-19500/447 2N5926, MIL-S-19500. 5961-A006) transistor 2N 2222 h 331 transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4

    4066 Handbook

    Abstract: 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101
    Text: K1L-S-19500/280A EC 6 .Tannery 197» SUPERSEDING HTL-S-19500/280(NAVY) 2 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, AND 2N3106


    OCR Scan     		PDF K1L-S-19500/280A MTL-S-19500/280 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 4066 Handbook 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101

    O7703

    Abstract: ic sj 2036 2N1489 2N1490 oc142 2N148B b961 2N1487 2N1488 Transistor 1967
    Text: M IL -S -19500/208B Ü4 A ugust 1967 SUPERSEDING M IL -S - 19500/208A EL 23 O cto b e r 1964 (See 6. 2) M ILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, H IGH-POW ER TY PES 2N1487, 2N1488, 2N1489, AND 2N1490 T h is s p e c ific a tio n is m an d ato ry fo r u se by a ll D e p a rt­


    OCR Scan     		PDF MIL-S-19500/208B 19500/208A 2N1487, 2N1488, 2N1489, 2N1490 2N1487 2N1489 2N1488 O7703 ic sj 2036 2N1490 oc142 2N148B b961 Transistor 1967

    2n491a

    Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
    Text: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. TX2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A


    OCR Scan     		PDF MH/-S-19500/75B 2N489A 2N494A. TX2N489A TX2N494A. 2N2417A 2N2422A, TX2N2417A TX2N2422A 2n491a Helipot 2N469A 2N490A MXL-STD-750 2N2418A 2N2422A 2N494A

    TX2N1724

    Abstract: 2N1724 2N1722 ADE350
    Text: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t­


    OCR Scan     		PDF MIL-S-19500/262F MIL-S-19500/262E 2N1722, TX2N1722, 2N1724, TX2N1724 1969-343-225/J16 TX2N1724 2N1724 2N1722 ADE350

    ygc 801

    Abstract: chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6969 2N6968 yx 801 ic DIODE dla 9-F
    Text: Mil S-19500/569 IS September 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL. SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS This specification Is approved for use by a ll Depart­ ments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-S-19500/569 2N6966, 2N6967, 2N6968, 2N6969 MIL-S-19500. T0-213AA. ygc 801 chip ygc 801 yx 801 2N6966 2N6967 801 ygc 2N6968 yx 801 ic DIODE dla 9-F

    GC102

    Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
    Text: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com­ patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support­


    OCR Scan     		PDF 377747S 12/16MHZ 16MHz 12MHz GC101/GC102 16MHz. /RAS40 /RAS6080 RAS40 GC102 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406