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    583 TRANSISTOR Search Results

    583 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    583 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IMD16A

    Abstract: No abstract text available
    Text: Transistors IMD16A 96-473-IMD16 583


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    PDF IMD16A 96-473-IMD16) IMD16A

    C2385

    Abstract: transistor c2385 transistor c2385 Data Sheet Q62702-C2385
    Text: BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ,R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


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    PDF Q62702-C2385 OT-23 Nov-27-1996 C2385 transistor c2385 transistor c2385 Data Sheet Q62702-C2385

    583 transistor

    Abstract: No abstract text available
    Text: BCR 583 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 583 XMs Pin Configuration 1=B 2=E Package


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    PDF VPS05161 EHA07183 OT-23 Oct-19-1999 583 transistor

    NPN general purpose silicon transistors

    Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
    Text: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)


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    PDF 94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K NPN general purpose silicon transistors Transistors General UMZ1N transistor 526 c114e transistors C124E dual npn 500ma 581 PNP

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/ 583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage


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    PDF MIL-PRF-19500/ 2N5681 2N5682

    2N5681

    Abstract: 2N5682 SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
    Text: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage


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    PDF MIL-PRF-19500/583 2N5681 2N5682 2N5681 2N5682 SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF

    2N5682

    Abstract: 2N5681 equivalent C-2688 MIL-PRF19500 2N5679 2N5681 JANTX2N5682 ST1113
    Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 21 November 1999. INCH-POUND MIL-PRF-19500/583A 21 August 1999 SUPERSEDING MIL-S-19500/583 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,


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    PDF MIL-PRF-19500/583A MIL-S-19500/583 2N5681 2N5682 MIL-PRF-19500. 2N5681 equivalent C-2688 MIL-PRF19500 2N5679 JANTX2N5682 ST1113

    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Philip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES ANNOUNCES $23 MILLION CREDIT FACILITY TO BE BETTER POSITIONED FOR FUTURE GROWTH


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    Untitled

    Abstract: No abstract text available
    Text: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Phillip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES REPORTS SECOND QUARTER RESULTS Westlake Village, California — July 26, 1996 — Diodes Incorporated (ASE: DIO)


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    ON Semiconductor marking 821

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


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    PDF 10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23


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    PDF 10kii 10kii) Q62702-C2385 OT-23

    2N5303

    Abstract: SPT5303 75 watt npn switching transistor
    Text: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps


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    PDF 2N5303, SPT5303 TWX-910-583-4807 2N5303 SPT5303 300/js, 75 watt npn switching transistor

    L0050A

    Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
    Text: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z


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    PDF TWX-910-583-4807 2N5091A, 2N5093A, 2N5094A 2N5096A 50mAdc 25mAdc, 150Vdc 100mAde, L0050A 2N5096A lt 0210 2N5091A 2N5093A 2N5094A

    MD14 package

    Abstract: md14 SPT6145 300VDC
    Text: Solid State Devices Incorporated 14830 Valley View La Mirada, C alifornia 90638 SPT6145 Telephone 213 921-9660 T W X -9 10-583-4807 GENERAL INFORMATION: PNP High Voltage Transistor primarily used for amplifiers and switching circuits. Packaged in a MD14 Case.


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    PDF SPT6145 TWX-910-583-4807 10raa* 300Vdc MD14 package md14 SPT6145

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC PRELIMINARY DATA SHEET 5-1-85 1BE -D |fi3bbDll 0DDB0b3 b | T " 33 06 - SFT6800 3 AMP HIGH VOLTAGE NPN TRANSISTOR 800 VOLTS CASE STYLE W JEDEC TO—5 " 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807


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    PDF SFT6800 2N5662 2N5663 SFT6900

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 12E D |ö3t.bDll 0002077 t> | PRELIMINARY DATA SHEET SFT502 AND SFT504 <5^xrirjV| svs& m 'll 5 AMP HIGH SPEED NPN TRANSISTOR 200 VOLTS 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396


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    PDF SFT502 SFT504 SFT501 SFT503

    j201

    Abstract: 2N5663 SFT6800 SFT6900
    Text: Xoo SFT6900 = = ) Lie'll 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213) 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • • • • • • BVCEO TO 400 VOLTS LOW SATURATION VOLTAGE


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    PDF SFT6900 SFT6800 2N5663 j201 SFT6800

    Untitled

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC Preliminary Data Sheet 12E D jô3btiDll GDDEQÛT S Jj SFT5659 15 AMR r- 33-0? 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE TO-59


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    PDF SFT5659 150ns 100MHz SFT61S9 10CIHz) 10Vdc, 25Vdc. 250mAdc, 1N5S02

    Untitled

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807


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    PDF DD02071 2N5002 2N5004 2N5003 2N5005

    la 1213

    Abstract: B2272 LS1500 SPT1010 SFT1010 SFT1012 SFT1014
    Text: PRELIMINARY DATA SHEET Xno \^>5' SFT1010 SFT1012 SFT1014 100 AMP HIGH ENERGY NPN TRANSISTORS V ceo 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 100, 120, 140 VOLTS CASE STYLE R FEATURES T O -3 WITH .060 PINS


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    PDF SFT1010 SFT1012 SFT1014 400mJ SFT10U 20Vdc, la 1213 B2272 LS1500 SPT1010

    transistor scans sheet

    Abstract: SFT501 SFT502 SFT503 SFT504 VC80 B178H
    Text: XOQIH^ PRELIMINARY DATA SHEET SFT501 AND SFT503 5 AMP HIGH SPEED PNP TRANSISTOR 200 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 FEATURES • • • • • • • •


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    PDF SFT501 SFT503 SFT502 SFT504 transistor scans sheet SFT503 SFT504 VC80 B178H

    2N5097

    Abstract: 2N5092 2N5094 2N5095 2N5096 10cf
    Text: X o i& U M UDII 2N5095 AND 2N5097 1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS CASE STYLE W JEDEC TO—5 I. P 330 .320 14830 Valley View Avenue La Mirada, California 90638 P. O. Box 577 La Mirada, California 90637 213 921-9660 TWX 910-583-4807 FEATURES


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    PDF 2N5095 2N5097 2N5094 2N5096 2N5092 2N5096 10cf

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 1SE D GOOEllb 1 | ~T~~33- 11 PRELIMINARY DATA SHEET SFT6900 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES


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    PDF SFT6900 SFT6800 2N5663

    Untitled

    Abstract: No abstract text available
    Text: » EVICES INC HE * 0002107 Q | PRFJ iIMINARY DATA SHEET ^ SFT2010 SFT2012 SFT2014 200 AMP HIGH ENERGY NPN TRANSISTOR V ceo 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FA X 213-921-2396 100, 120, 140 VOLTS CASE STYLE R


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    PDF SFT2010 SFT2012 SFT2014 800mJ SFT2010 SFT2012