Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D B 7 ^ 4 1 4 5 Q010402 4 58256BN DRAM MODULES u M U 5 -n 25 6K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN Is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam
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Q010402
KMM58256BN
58256BN
44C256BJ
20-pin
30-pin
22fiF
130ns
58256BN-
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Untitled
Abstract: No abstract text available
Text: 58256BN DRAM MODULES 2 5 6 K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam sung KM M 58256BN consist of two 1M bit DRAMs
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KMM58256BN
58256BN
44C256BJ
20-pin
30-pin
58256BN-
130ns
150ns
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44C256BJ
Abstract: O-256K KMM58256BN
Text: 58256BN DRAM MODULES 256KX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam sung KM M 58256BN consist of two 1M bit DRAMs KM 44C256BJ - 2 5 6 K X 4 in 20-pin SOJ packages
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KMM58256BN
256KX8
58256BN
44C256BJ
20-pin
30-pin
KMM58256BN-
O-256K
KMM58256BN
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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