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    578XCX

    Abstract: avalanche photodiode bias and high voltage
    Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter Measurement


    Original     		PDF 578XCX 10Gb/s avalanche photodiode bias and high voltage

    InGaAs Epitaxx APD

    Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
    Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown


    Original     		PDF 578XCX 578XCX. InGaAs Epitaxx APD receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver