2sk2955
Abstract: ADE-208-564 Hitachi DSA002780
Text: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564 Target Specification 1st. Edition Features • Low on-resistance RDS = 0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2955 Absolute Maximum Ratings Ta = 25°C
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2SK2955
ADE-208-564
2sk2955
Hitachi DSA002780
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DALE R1F resistor
Abstract: DALE R1F MAX1647 MBRS340T3 TPSE686M020R0150 35CV150GX IRF7303 MAX1648 MAX745 MAX745EVKIT
Text: MAX745 Evaluation Kit _Component Suppliers SUPPLIER* AVX Dale-Vishay International Rectifier IRC Motorola Sanyo Sumida PHONE FAX 803 946-0690 (402) 564-3131 (310) 322-3331 (512) 992-7900 (602) 303-5454 (619) 661-6835 (847) 956-0666 (803) 626-3123
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MAX745
300kHz
MAX745EVKIT
MAX745
DALE R1F resistor
DALE R1F
MAX1647
MBRS340T3
TPSE686M020R0150
35CV150GX
IRF7303
MAX1648
MAX745EVKIT
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SCN2861
Abstract: NS32CG16V-15 eprom 27c512 IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER bitblt NS32202 27C256 27C512 DP8511 SCN2681
Text: National Semiconductor Application Note 564 June 1989 1 0 INTRODUCTION This design is for a stand alone NS32CG16 execution vehicle The design includes the NS32081 Floating Point Unit DP8511 BitBlt Processing Unit NS32202 Interrupt Control Unit and SCN2681 Dual channel serial interface MONCG a
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NS32CG16
NS32081
DP8511
NS32202
SCN2681
MON16
DBG32
SCN2861
NS32CG16V-15
eprom 27c512
IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER
bitblt
27C256
27C512
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transistor A 564
Abstract: tranzorb maxim rs232 protection overvoltage tranzorb diode Overvoltage protection Tranzorb AN564 APP564 DS232A MAX232A tranzorbs
Text: Maxim > App Notes > INTERFACE CIRCUITS PROTECTION AND ISOLATION Keywords: RS-232, rs232, tranceivers, EIA/TIA-232, ESD, protection diodes Apr 06, 2001 APPLICATION NOTE 564 Tech Brief 10: ESD Considerations for RS-232 Drivers Abstract: Technical brief suggests ESD protection schemes for RS-232 transceivers. Basic diode clamps,
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RS-232,
rs232,
EIA/TIA-232,
RS-232
com/an564
DS232A:
MAX232A:
AN564,
APP564,
transistor A 564
tranzorb
maxim rs232 protection overvoltage
tranzorb diode
Overvoltage protection Tranzorb
AN564
APP564
DS232A
MAX232A
tranzorbs
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S1C17564
Abstract: hx 630 S1C17 S1C17554 high power thyristor REGULATOR IC 7812 SMD
Text: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.0 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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16-BIT
S1C17554/564
represe52-2585-4600
S1C17564
hx 630
S1C17
S1C17554
high power thyristor
REGULATOR IC 7812 SMD
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S1C17564
Abstract: murata filter 10.7
Text: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.3 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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16-BIT
S1C17554/564
S1C17564
murata filter 10.7
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rtd pt100 interface to 8051
Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515
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OPA340PA:
ADS7816P:
12-Bit
200KHz
OPA2337PA:
ADS7822P:
INA125UA:
OPA680U:
OPA547F:
rtd pt100 interface to 8051
24V 20A SIEMENS battery charger
LM2560
smd 58a transistor 6-pin
pic 16f84 PWM circuit
scr control light intensity using 8051
8051 microwave oven
design of FM transmitter final year project
project pic 16f84 pwm
"white led" 5mm
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S1C17564
Abstract: thyristor PSR 406
Text: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.1 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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16-BIT
S1C17554/564
S1C17564
thyristor PSR 406
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P40-P45
Abstract: No abstract text available
Text: CMOS 16-BIT SINGLE CHIP MICROCONTROLLER S1C17554/564 Technical Manual Rev.1.2 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability
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16-BIT
S1C17554/564
P40-P45
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ROM 2764
Abstract: ASM800 Z84C15
Text: #RRNKECVKQP 0QVG = WR H= &RQYHUVLRQ #0 l <K.1 +PE < VQ G< %QPXGTUKQP 6#$.' 1 %106'065 #$564#%6 )GPGTCN 1XGTXKGY
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HD64F7046F50
Abstract: Hitachi DSA0059 Nippon capacitors REJ10B0152
Text: REJ09B0270-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7046 Group Hardware Manual
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REJ09B0270-0400
SH7046
32-Bit
Family/SH7046
HD64F7046
HD6437048
HD6437148
HD64F7046F50
Hitachi DSA0059
Nippon capacitors
REJ10B0152
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HD64F7046FW50
Abstract: REJ09B0171-0500O HD6437048 HD6437148 HD64F7046 SH7046 REJ10B0152 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SH7046
REJ09B0270-0400
HD64F7046FW50
REJ09B0171-0500O
HD6437048
HD6437148
HD64F7046
REJ10B0152
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: AOC4810 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AOC4810 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 4.5V while retaining a 20V VGS(MAX) rating. It
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AOC4810
AOC4810
715EF
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FLL300IL-3
Abstract: FLL300IL-2 FLL300IL-1 FLL30 J10-14
Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package
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FLL300IL-1,
FLL300IL-2,
FLL300IL-3
FLL300IL-2)
FLL300IL-3
6000mA
FLL300IL-2
FLL300IL-1
FLL30
J10-14
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FLL300IL-2
Abstract: FLL300IL-1 FLL300IL-3 1200 - 1400 MHz L-Band Applications
Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package
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FLL300IL-1,
FLL300IL-2,
FLL300IL-3
FLL300IL-2)
FLL300IL-3
RATING4888
FLL300IL-2
FLL300IL-1
1200 - 1400 MHz L-Band Applications
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Untitled
Abstract: No abstract text available
Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package
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FLL300IL-1,
FLL300IL-2,
FLL300IL-3
FLL300IL-2)
FLL300IL-3
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2SK2955
Abstract: No abstract text available
Text: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-564 Target Specification 1st. Edition Features • L ow on-resistance R ds = 0.010 Q typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 1. Gate
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2SK2955
ADE-208-564
2SK2955
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC564 Octal 3-State Inverting D Flip-Flop High-Perform ance Silicon-Gate C M O S The M C 54/74H C 564 is identical in pinout to the LS564. The device inputs are com patible w ith standard C M O S outputs, with pullup resistors, th e y are
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MC54/74HC564
54/74H
LS564.
HC534A
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FLL300IL-1
Abstract: microwave databook
Text: F,ifm-i • FLL300IL-1, FLL300IL-2, FLL300IL-3 I 1jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-idg = 44.5dBm Typ. • High Gain: G -j^B = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability
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FLL300IL-1,
FLL300IL-2,
FLL300IL-3
FLL300IL-2)
FLL300IL-3
FLL300IL-1
FLL300IL-1
microwave databook
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Untitled
Abstract: No abstract text available
Text: LF147/LF347 National Semiconductor LF147/LF347 Wide Bandwidth Quad JFET Input Operational Amplifiers General Description Features The LF147 is a low cost, high speed quad JFET input opera tional amplifier with an internally trimmed input offset volt age BI-FET II technology . The device requires a low
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LF147/LF347
LF147/LF347
LF147
LM148.
LF148
LM124
LM148
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FLK022XV
Abstract: No abstract text available
Text: FLK022XP, FLK022XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a pow er G aAs FET that is
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FLK022XP,
FLK022XV
FLK022XV
FLK022XP
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FLK022
Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
Text: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is
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FLK022XP,
FLK022XV
FLK022XV
FLK022XP
FLK022
GaAs FET HEMT Chips
FLK022XP
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FLL300IL-3
Abstract: FLL300IL-1 FLL300IL-2
Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • High Gain: G 1dB = 12.0dB (Typ.)@1,8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability • Hermetically Sealed Package
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FLL300IL-1,
FLL300IL-2,
FLL300IL-3
FLL300IL-2)
FLL300IL-3
FCSI0598M200
FLL300IL-1
FLL300IL-2
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IC NE564
Abstract: telephone NT NE554 NE554 NE564 equivalent NE564 ana 618 equivalent KDK TRANSISTOR pll 564
Text: Application note Philips Semiconductors Linear Products Clock regenerator with crystal-controlled phase-locked loop VCO NE564 INTRODUCTION . “second-order” system . An RC series filter com bination will cause a ie ad-lag condition that w ill perm it dyna m ic selectivity, along with
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NE564)
NE564,
800mVp
IC NE564
telephone NT NE554
NE554
NE564 equivalent
NE564
ana 618 equivalent
KDK TRANSISTOR
pll 564
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