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    5600 OG Search Results

    5600 OG Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-AD5600PMDZ Analog Devices Evaluation board Visit Analog Devices Buy
    ADP5600ACPZ-R7 Analog Devices Inverting Charge Pump & Low No Visit Analog Devices Buy
    AD5600HRMZ Analog Devices SI,High Temp,V-Out,unbuffered Visit Analog Devices Buy
    ADP5600CP-EVALZ Analog Devices Demo - Inv Chrg Pump & Low Noi Visit Analog Devices Buy

    5600 OG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    130300

    Abstract: 15000F
    Text: V i sh ay I n tertech n o l o g y, I n c . Capacitors - Aluminum Electrolytic in Insulated Case I INNOVAT AND TEC O L OGY 500 PGP-ST Series N HN VISHAY BCcomponents O 19 62-2012 500 PGP-ST Series General-Purpose Power Aluminum Capacitors with Screw Terminals


    Original     		PDF VMN-PT0247-1204 130300 15000F

    Untitled

    Abstract: No abstract text available
    Text: V ishay I ntertechnology, I nc . I INNOVAT AND TEC O L OGY MONO-K AP N HN Ceramic Capacitors O 19 62-2012 Capacitors - High Capacitance in Small Size K10 Series Multilayer Ceramic Dipped Radial Capacitors Key Benefits • High capacitance in small size • Cost effective solution


    Original     		PDF 2011/65/EU, K-103-K-10-X7R-F-5-3-H-5 VMN-PT9161-1202

    UPS circuit diagram pcb

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n o l o g y, I n c . I INNOVAT AND TEC O L OGY Power Application Capabilities N HN aluminum electrolytic capacitors O 19 62-2012 Capacitors - Aluminum Electrolytic Aluminum Electrolytic Capacitors in Power Applications Power Applications


    Original     		PDF VMN-PL0453-1204 UPS circuit diagram pcb

    NF822

    Abstract: No abstract text available
    Text: V ishay I n tertech n o l o g y, I n c . Capacitors - High Q and Low ESR at High Frequency I INNOVAT AND TEC O L OGY VJ.W1BC High Q Dielectric N HN Multilayer Ceramic Chip Capacitors O 19 62-2012 Surface-Mount MLCC Capacitors for High Q Commodity Applications


    Original     		PDF 2011/65/EU VMN-PT0098-1203 NF822

    cdma Booster schematic

    Abstract: SSOP-28 AWT1921 AWT1921S11 R4-2200
    Text: AWT1921 Integrated High Power Amp 1610 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • High Output Intercept Point High Linearity True Surface Mount Package Internal Bias Circuit Requiring Nominal Input Voltages + 10% Low Cost Off Chip Output Matching Circuit Allows


    Original     		PDF AWT1921 AWT1921 SSOP-28 cdma Booster schematic SSOP-28 AWT1921S11 R4-2200

    Untitled

    Abstract: No abstract text available
    Text: V ishay I n tertech n o l o g y, I n c . I INNOVAT AND TEC O L OGY 146 RTI N HN VISHAY BCcomponents O 19 62-2012 Capacitors - Radial Aluminum High Reliability 146 RTI Radial Aluminum Capacitors for Advanced Applications Key Benefits • • • • • •


    Original     		PDF AEC-Q200 MBC242 VMN-PT0132-1204 SET10

    STR W 5456 C

    Abstract: STR W 5456 A analog to digital converter datasheets PLCC28 TDA8718 TDA8718K IRT 1250
    Text: INTEGRATED CIRCUITS DATA SHEET TDA8718 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter


    Original     		PDF TDA8718 TDA8718 SCD31 533061/1500/04/pp16 STR W 5456 C STR W 5456 A analog to digital converter datasheets PLCC28 TDA8718K IRT 1250

    C1005C0G1H200J

    Abstract: TDK C3216 C0G C1005
    Text: 4112_C1005 1/6 Ceramic Capacitors C Series For General Use SMD FEATURES • High capacitance has been achieved through precision technol- • • • • • ogies that enable the use of multiple thinner ceramic dielectric layers. A monolithic structure ensures superior mechanical strength and


    Original     		PDF C1005 characterist05M C3216Y5V1C475Z C3216Y5V1A106Z C3216Y5V1A226Z C3216X7R1C155K C3216X7R1C155M C3216X7R1C225K C3216X7R1C225M C1005 C1005C0G1H200J TDK C3216 C0G

    STR 6656

    Abstract: so24L str 6853 MSA686 IEC134 MSA685 TDF8704 TDF8704T linear CCD STR w 6656
    Text: INTEGRATED CIRCUITS DATA SHEET TDF8704 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 Philips Semiconductors June 1994 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter


    Original     		PDF TDF8704 SCD31 533061/1500/03/pp20 STR 6656 so24L str 6853 MSA686 IEC134 MSA685 TDF8704 TDF8704T linear CCD STR w 6656

    TDA8705A

    Abstract: TDA8705AT
    Text: INTEGRATED CIRCUITS DATA SHEET TDA8705A 6-bit high-speed dual Analog-to-Digital Converter ADC Product specification Supersedes data of November 1994 File under Integrated Circuits, IC02 1996 Jan 12 Philips Semiconductors Product specification 6-bit high-speed dual Analog-to-Digital


    Original     		PDF TDA8705A SCDS47 537021/1100/02/pp16 TDA8705A TDA8705AT

    Intech 110

    Abstract: 143E intech 13 bit analog to digital converter Intech Advanced Analog differential amplifier ADC5200 adc5600
    Text: INTECH IN C / ADVANCED 43E D 4024=147 0 0 G l b û 2 7 • Advanced Analog ADVA T-51-IÔ -12 a division of Intech DESCRIPTION ADC5200/5600 SERIES The ADC5200/5600 Series devices are successive approximation 12-bit A /D converters with 13/xsec or 50/isec conversion time. These devices are


    OCR Scan     		PDF 00Glbà ADC5200/5600 12-bit 13/xsec 50/xsec 7///////777T" MIL-STD-1772 Intech 110 143E intech 13 bit analog to digital converter Intech Advanced Analog differential amplifier ADC5200 adc5600

    IP40G

    Abstract: P30R124
    Text: I PIOto P40 Series Multilayer Ceramic Capacitors M allorY Axial Leaded Conformally Coated GENERAL SPECIFICATIONS Encapsulation consists of a moisture and shock resistant coating that meets UL94V-0 Voltage Range: 50, 100VDC Over 135 CV values available Capacitance Range:


    OCR Scan     		PDF UL94V-0 100VDC PI0U224 P20U224 P30U224 2U274 P20U274 P30U274 PI2U334 P20U334 IP40G P30R124

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S


    OCR Scan     		PDF SUP/SUB75N03-07 O-220AB O-263 SUP75N03-07 SUB75N03-07 S-57585-- 15-Jun-98

    Intersil BIPOLAR PROM PROGRAMMING SPECIFICATION

    Abstract: Bipolar PROM programming BIPOLAR PROM PROGRAMMING SPECIFICATION IM5600CPE IM5600 PACKAGE IM5610CPE DM5600 IM5600CJE IM5610 intersil detailed bipolar prom programming
    Text: IM 5 60 0/IM 5 61 0 2 5 6 B it B ipolar Read O nly Memory DMÜ^DIL FEATURES G EN ER A L D E S C R IP T IO N • Uses Patented A IM Programming Elem ent for — Superior Reliability — High Programming Yield — Fast Programming Speed < 1 sec — T T L Processing Com patibility


    OCR Scan     		PDF IM5600/IM5610 IM5600 IM5610 Intersil BIPOLAR PROM PROGRAMMING SPECIFICATION Bipolar PROM programming BIPOLAR PROM PROGRAMMING SPECIFICATION IM5600CPE IM5600 PACKAGE IM5610CPE DM5600 IM5600CJE IM5610 intersil detailed bipolar prom programming

    capacitor 104m z5u 50

    Abstract: 104m Z5U 50 TDK CC0805HNP CC0603H CC0805HX7R104K CC0805HX7R103K Z5U 104M C3216COG1H CC1206HNP0392J CC0603HX7R103K
    Text: CAPACITORS Ceramic Chip Electrical Specification Capacitance Range Temperature Characteristic 10pF to 10.0p,F NPO: 0±30ppm /°C -55°C to + 125°C 1Vrms, 1kHz 25°C X7R: NPO 1,000pF and less: 1MHz X5R: ±15% (-55°C to +85°C) Y5V: +22-82% (-30°C to +85°C)


    OCR Scan     		PDF 000pF 30ppm C3216Y5V1H474Z C3216Y5V1H105Z 1206EZ5U CC1206EZ5U224M C3216Z5U1E104M C3216Z5U1E224M CC1210CY5V106Z C3225Y5V1C capacitor 104m z5u 50 104m Z5U 50 TDK CC0805HNP CC0603H CC0805HX7R104K CC0805HX7R103K Z5U 104M C3216COG1H CC1206HNP0392J CC0603HX7R103K

    electrolytic ELITE

    Abstract: electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4
    Text: O No. I O O / \ ' 7 I K 1 Products G uide 7 ,r ; P age 1. C ap acitor S eries Table - 2 2. Precautions in Using Alum inum Electrolytic C apacitors - 4 3. Part N um bering System


    OCR Scan     		PDF sh163b electrolytic ELITE electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4

    Untitled

    Abstract: No abstract text available
    Text: Type 30LR +105C Low ESR Miniature Axial Lead, Aluminum Capacitors Features — • +105°C Long Life • Low ESR Per CV • Case Sizes to 18mm Diameters • Performance Meeting or Exceeding Radial Leaded Devices. General Specifications — Operating Temperature:


    OCR Scan     		PDF 200VDC. initia0LR276M200EH2A 30LR336M200FH2A 30LR686M200GH2A 30LR826M200LS2A 30LR688M6R3LS2 30LR687M063LS2 30LR278M6R3GF2

    tda 3300

    Abstract: No abstract text available
    Text: F= 7 * J £ S G S -T H O M S O N R UKgTTM Ogi TDA7220 VERY LOW VOLTAGE AM-FM RADIO • ■ ■ ■ ■ ■ ■ OPERATING SUPPLY VOLTAGE: 1.5 T 06V HIGH SENSITIVITY AND LOW NOISE LOW BATTERY DRAIN VERY LOW TWEET HIGH SIGNAL HANDLING VERY SIMPLE DC SWITCHING OF AM-FM


    OCR Scan     		PDF TDA7220 30MHz DIP16 16-lead 0074flfl^ tda 3300

    Untitled

    Abstract: No abstract text available
    Text: •I 1017247 0020137 H7fl TO SH IB A SEMICONDUCTOR TOSHIBA LED LAMP T L Y H 1 9 0 P InGaAlP YELLOW LIGHT EMISSION TECHNICAL DATA O P A N E L CIRCUIT INDICATOR UNIT : mm 10mm DIAMETER • InGaAlP Yellow LED • All Plastic Mold Type. • Colorless Clear Lens


    OCR Scan     		PDF TLYH190P

    Untitled

    Abstract: No abstract text available
    Text: Capacitance Conversion NanoFarad nF 1R5 Pico Farad (pF) 1.5 0.0015 391 PicoFarad (pF) 390 2R2 2.2 0.0022 401 EIA Code MioroFarad (HF) NanoFarad (nF) MicroFarad 400 0.39 0.4 471 470 511 510 EIA Code NanoFarad (nF) 273 PicoFarad (pF) 27000 27 0.027 333 33000


    OCR Scan     		PDF

    THYRISTOR GTO

    Abstract: rkm THYRISTOR GTO rkm v SDG250 SDG250HB SDG250HD SDG250HF SDG250HH SDG250HK 600a thyristor gate turn off
    Text: SDG250 77mm SYM GTO 4500V / 2500A SPCO Type SDG250 reverse blocking gate turn-off thyristor, GTO, is manufactured by the proven multi-dif­ fusion process and incorporates a unique emitter design patent issued which offers distinct advantages for improving the gate turn-off conditions.


    OCR Scan     		PDF SDG250 500V/2500A SDG250 6RT411 SDG250HK SDG250HH 4400rn-off 00A/us, THYRISTOR GTO rkm THYRISTOR GTO rkm v SDG250HB SDG250HD SDG250HF 600a thyristor gate turn off

    2200 microfarad electrolytic capacitor

    Abstract: capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor
    Text: General Data For Capacitors EIA CAPACITANCE CODE VS MICRO-PICO-NANO-FARAD <MF PF) (NF) EIA CODE MICRO-FARAD PICO-FARAD NANO-FARAD 1R5 1.5 .0015 2R2 2.2 .0022 3R3 3.3 .0033 4R7 4.7 .0047 6R8 6.8 .0068 100 10 .01 150 15 .015 220 22 .022 250 25 .025 330 33


    OCR Scan     		PDF 220nF 1000pF 10jiF 2200 microfarad electrolytic capacitor capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor

    2700 microfarad capacitor

    Abstract: capacitor 220 microfarad capacitor 10 microfarad 4700 microfarad 25 V 1000 microfarad 35 v capacitor 470 microfarad 15000 microfarad capacitor 101 Ceramic Disc Capacitors 6800 microfarad capacitor picofarad .LY
    Text: General Data For Capacitors EIA CAPACITAN CE C O D E V S M ICRO-PICO-NANO-FARAD NF (MF) (PF) EIA C O D E MICRO-FARAD PICO-FARAD NANO-FARAD 1.5 .0015 1R5 2R2 2.2 .0022 3R3 3.3 .0033 4.7 .0047 4R7 6R8 6.8 .0068 10 .01 100 150 15 .015 .022 22 220 250 25 .025


    OCR Scan     		PDF 10OOpF 1000nF 000nF 000uF 2700 microfarad capacitor capacitor 220 microfarad capacitor 10 microfarad 4700 microfarad 25 V 1000 microfarad 35 v capacitor 470 microfarad 15000 microfarad capacitor 101 Ceramic Disc Capacitors 6800 microfarad capacitor picofarad .LY

    2U 73 diode

    Abstract: siliconix
    Text: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET


    OCR Scan     		PDF 6415DQ S-49519-- 18-Dec-96 2U 73 diode siliconix