Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    55B MOSFET Search Results

    55B MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    55B MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDC655BN

    Abstract: No abstract text available
    Text: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description • 6.3 A, 30 V. RDS ON = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V ■ Fast switching ■ Low gate charge ■ High performance trench technology for extremely low Rdson


    Original     		PDF FDC655BN FDC655BN

    Untitled

    Abstract: No abstract text available
    Text: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain


    Original     		PDF FDC655BN 10elopment.

    Untitled

    Abstract: No abstract text available
    Text: FDC655BN tm Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features General Description „ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process


    Original     		PDF FDC655BN FDC655BN

    Untitled

    Abstract: No abstract text available
    Text: FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 30 V, 6.3 A, 25 mΩ Features tm General Description ̈ Max rDS on = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process


    Original     		PDF FDC655BN

    TOP256YN

    Abstract: top258 top253 TOP255 TOP262 top256 top252 transistor KPS 92 TOP257 TO-220-7C
    Text: TOP252-262 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads


    Original     		PDF OP252-262 TOP256YN top258 top253 TOP255 TOP262 top256 top252 transistor KPS 92 TOP257 TO-220-7C

    top258pn ic Diagram

    Abstract: top*254 en top253 TOP261YN TOP256PN
    Text: TOP252-262 TOPSwitch-HX Family Enhanced EcoSmart™, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads


    Original     		PDF OP252-262 top258pn ic Diagram top*254 en top253 TOP261YN TOP256PN

    Untitled

    Abstract: No abstract text available
    Text: TOP252-262 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads


    Original     		PDF OP252-262

    transistor KPS 92

    Abstract: TOP255 TOP252 TOP262 TOP256YN top256 TOP254PN TOP252-262 top 258 TOP258
    Text: TOP252-262 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads


    Original     		PDF OP252-262 transistor KPS 92 TOP255 TOP252 TOP262 TOP256YN top256 TOP254PN TOP252-262 top 258 TOP258

    TOP256

    Abstract: top*254 en top258 top253 top261 TOP257 TOP261YN TOP259-261YN TOP256YN TOP254PN
    Text: TOP252-261 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads


    Original     		PDF OP252-261 TOP256 top*254 en top258 top253 top261 TOP257 TOP261YN TOP259-261YN TOP256YN TOP254PN

    S4 56a SMD diode

    Abstract: smd transistor 56B TOP250 TOP242-250 smd diode s6 64a transformer for top250 capacitor 336 35K 102 smd diode S4 64a TOP244 TOP243 equivalent
    Text: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P/G packages


    Original     		PDF OP242-250 S4 56a SMD diode smd transistor 56B TOP250 TOP242-250 smd diode s6 64a transformer for top250 capacitor 336 35K 102 smd diode S4 64a TOP244 TOP243 equivalent

    IC TOP246

    Abstract: smd transistor 56B TOP242-250 Diode smd s6 63A TOP244 TOP245 PN transistor equivalenT MBR20100 capacitor 336 35K 102 pin DIAGRAM OF DIP8 TOP 244 PN IN645
    Text: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P package


    Original     		PDF OP242-250 IC TOP246 smd transistor 56B TOP242-250 Diode smd s6 63A TOP244 TOP245 PN transistor equivalenT MBR20100 capacitor 336 35K 102 pin DIAGRAM OF DIP8 TOP 244 PN IN645

    TOP250Y

    Abstract: IC TOP246 pin DIAGRAM OF DIP8 TOP 244 PN rms 600 watt mosfet schematic transformer for top249 TOP245 transformer for top250 Diode smd s6 63A smd transistor 56B two pin diode SMD 54a
    Text: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P package


    Original     		PDF OP242-250 TOP250Y IC TOP246 pin DIAGRAM OF DIP8 TOP 244 PN rms 600 watt mosfet schematic transformer for top249 TOP245 transformer for top250 Diode smd s6 63A smd transistor 56B two pin diode SMD 54a

    2561 optocoupler

    Abstract: S4 56a SMD diode LIGHT LASER DIODE SAMSUNG 1N4148 SMD PACKAGE 2561 opto TOP244 n transformer for top250 Three-terminal Off-line PWM Switch Diode smd s6 63A TOP250
    Text: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P package


    Original     		PDF OP242-250 2561 optocoupler S4 56a SMD diode LIGHT LASER DIODE SAMSUNG 1N4148 SMD PACKAGE 2561 opto TOP244 n transformer for top250 Three-terminal Off-line PWM Switch Diode smd s6 63A TOP250

    S4 56a SMD diode

    Abstract: smd diode S6 58a Diode smd s6 54A smd diode S4 56a smd diode S4 58a
    Text: TOP242-250 TOPSwitch-GX Family Extended Power, Design Flexible, ® EcoSmart, Integrated Off-line Switcher Product Highlights Lower System Cost, High Design Flexibility • Extended power range for higher power applications • No heatsink required up to 34 W using P/G packages


    Original     		PDF OP242-250 S4 56a SMD diode smd diode S6 58a Diode smd s6 54A smd diode S4 56a smd diode S4 58a

    J50 mosfet

    Abstract: IRLSZ24A T0-220F
    Text: IRLSZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 60 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower fnput Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @


    OCR Scan     		PDF IRLSZ24A T0-220F J50 mosfet IRLSZ24A T0-220F

    100TB

    Abstract: 2SK2691-01R DIODE SJ 98
    Text: FU JI 2SK2691-01R N-channel MOS-FET FAP-IIIB Series 60V > Features - 0 ,0 1 Q 70 A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T O -3P F > Applications - Motor Control General Purpose Power Amplifier


    OCR Scan     		PDF 2SK2691-01R 186mH 100TB DIODE SJ 98

    2SK 1110

    Abstract: hd1-M -DC5V
    Text: 2 S K 1 8 1 7 -M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ TTT - r - l l i • Features ^ S E R I E S Outline Drawings • High current • Low no-resistance


    OCR Scan     		PDF 2SK1817-M A2-247 2SK 1110 hd1-M -DC5V

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY MTE O D M o s □ a s ? ^ D 1O ' POWER MOS IV _ oooosdg ?as mAVP A d va n c ed POWER -T-3PI-1S Te c h n o lo g y APT1002RAN 1000V 6.0A 2.00 Q APT902RAN 900V 6.0A 2.00 Q APT1002R4AN 1000V 5.5A 2.40 Q APT902R4AN 900V 5.5A 2.40 Q


    OCR Scan     		PDF APT1002RAN APT902RAN APT1002R4AN APT902R4AN 902RAN 1002RAN 902R4AN 1002R4AN

    transistor 5GW

    Abstract: 221A-06 AN569 MTP6N10 T3B5 75S4
    Text: MOTOROLA SC XSTRS/R F bflE D • b3b7E5i+ DücJflbfl4 TGO ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6 AMPERES RDS{on) = 0 8


    OCR Scan     		PDF MTP6N10 b3b7254 transistor 5GW 221A-06 AN569 MTP6N10 T3B5 75S4

    Untitled

    Abstract: No abstract text available
    Text: I . I» I Provisional Data Sheet No. PD 9 .1 292B International l R Rectifier HEXFET PO W ER M O S FE T IRFY440CM N-CHANNEL Product Summary 500 Volt, 0.85Î2 H E X F E T HEXFET technology is the key to International Rectifier’s advanced line of power M O SFET transistors. The effi­


    OCR Scan     		PDF IRFY440CM

    17N55

    Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
    Text: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)


    OCR Scan     		PDF IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 O-204 O-247 IXTH17N60, IXTM17N60, 17N55 MOSFET 17N60 17N60

    16 pin ic 3810

    Abstract: CS-3810DW20 220V ac to 9V dc converter circuit smps control ic 393 buck pfc 220v ac to 9v dc converter buck converter 110v to 100 CS-3810N20 1.5V supply voltage smps 220v AC to 110v AC using resistor circuit diagram
    Text: Power Factor Correction Features Description The CS-3810 allows an AC to DC con­ verter to draw power at near unity power factor by employing hysteretic current mode control. The IC's exter­ nally programmable hysteresis con­ trols the converter's switching


    OCR Scan     		PDF CS-3810 10V/220V CS-3810 CS-3810N20 CS-3810DW20 20k7SSLj 16 pin ic 3810 220V ac to 9V dc converter circuit smps control ic 393 buck pfc 220v ac to 9v dc converter buck converter 110v to 100 1.5V supply voltage smps 220v AC to 110v AC using resistor circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC96C55 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Power Oscillator is an easily pro­ grammed IC that can be used in simple switch-mode power supplies, diode doublers and inverters, and similar circuits


    OCR Scan     		PDF TC96C55 1800pF 20nsec TC96C555 TC96C555

    PD9823

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.823A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7360 IRHM836Q ;n N-CHANNEL MEGA RAD HARD 400 Volt, 0.22 Q, MEGA RAD HARO HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		PDF IRHM7360 IRHM836Q 1x106 1x105 1x106 IRHM7360D IRHM7360U O-254 MIL-S-19500 H-250 PD9823