NS256N
Abstract: S29NS-N S29NS-P VDC048 VDE044 128M256 NS128N
Text: S29NS-N to S29NS-P Migration Migrating from the NS-N 110 nm to the NS-P (90 nm) Application Note Introduction Every effort was made to ensure seamless migration from the S29NS-N to the S29NS-P. Software Migration Considerations There are very few changes required in SW when migrating from the S29NS-N to S29NS-P
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S29NS-N
S29NS-P
S29NS-P.
S29NS-P
NS256N
VDC048
VDE044
128M256
NS128N
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TIAM2
Abstract: opamp 555 MTI04C MTCS-TIAM2 CM5-32 photo diode array 06202E
Text: The information contained in this documentation is the property of MAZeT. Photocopying or otherwise reproducing any part of the catalog, whether electronically or mechanically, is prohibited, except NO. where the express permission of MAZeT GmbH has been obtained. 1
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DB-06-202E
TIAM2
opamp 555
MTI04C
MTCS-TIAM2
CM5-32
photo diode array
06202E
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DIN5033
Abstract: MTI04C CIE1991 445 nm 445 nm photo DB-082
Text: The information contained in this documentation is the property of MAZeT. Photocopying or otherwise reproducing any part of the catalog, whether electronically or mechanically is prohibited, except NO. where the express permission of MAZeT GmbH has been obtained. 1
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DB-08-239E
DIN5033
MTI04C
CIE1991
445 nm
445 nm photo
DB-082
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DIN5033
Abstract: MTI04C MTCS-TIAM2 CIE1931 preposition and article rgb sensor MTI04 445 nm 06202E
Text: The information contained in this documentation is the property of MAZeT. Photocopying or otherwise reproducing any part of the catalog, whether electronically or mechanically is prohibited, except NO. where the express permission of MAZeT GmbH has been obtained. 1
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DB-06-202E
DIN5033
MTI04C
MTCS-TIAM2
CIE1931
preposition and article
rgb sensor MTI04
445 nm
06202E
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DATASHEET OF IC 723
Abstract: HN58C256 Series dynamic ram nmos 262144 HN27C4096AG HN58C1001 book ic 555 HN58C1001 Series HN58C256 HN624116 HN27C256AG
Text: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.
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"Piezo Buzzer" miniature
Abstract: No abstract text available
Text: Application guide •HANDLING PRECAUTIONS ■Common points for all products 1. Shock resistance Epson’s crystal products are designed to resist physical shocks, but crystal products may be damaged under some conditions, such as dropping from desks or receiving shocks during mounting. Please be sure to re-check the characteristics if product has
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4574SA
8581SA
RA-4574SA
RA-8581SA
NS-32R
FS-335
FF-32N
FS-555
FF-555
"Piezo Buzzer" miniature
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • BVCEO > -150V BVCEV > -180V IC = -700mA high Continuous Collector Current Low saturation voltage VCE sat < -300mV @ -100mA
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FCX555
-150V
-180V
-700mA
-300mV
-100mA
FCX495
AEC-Q101
J-STD-020
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AD0832
Abstract: traffic control timer using 3 relays on 555 AD0831 LM358 555 pwm design of PROCESS CONTROL TIMER using 555 ic a to d converter using ic 555 timer AD0834 analog to digital convert LM358 LM311 V comparator 14 PIN DIAGRAM IC 555 timer low volt
Text: Analog-to-Digital Conversion with the Neuron Chip January 1995 L ON W ORKS ® Engineering Bulletin This document describes some of the more popular analog to digital A/D conversion schemes available for use with the Neuron Chip. Included is the description and an example of the Neuron Chip's built-in Dualslope I/O object. The
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1-800-2584LON
AD0832
traffic control timer using 3 relays on 555
AD0831
LM358 555 pwm
design of PROCESS CONTROL TIMER using 555 ic
a to d converter using ic 555 timer
AD0834
analog to digital convert LM358
LM311 V comparator 14 PIN DIAGRAM
IC 555 timer low volt
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AD0832
Abstract: AD0831 LM398 design of PROCESS CONTROL TIMER using 555 ic AD0838 LM358 555 pwm traffic control timer using 3 relays on 555 a to d converter using ic 555 timer lm398 comparator voltage to frequency converter using ic 555 timer
Text: EB155 Analog–to–Digital Conversion with the NEURONR CHIP This document describes some of the more popular analog to digital A/D conversion schemes available for use with the NEURON CHIP. The intent is not to provide an exhaustive survey of all conversion techniques but to provide an
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EB155
MAX170
MAX171
MAX190
Q4/90.
AD0832
AD0831
LM398
design of PROCESS CONTROL TIMER using 555 ic
AD0838
LM358 555 pwm
traffic control timer using 3 relays on 555
a to d converter using ic 555 timer
lm398 comparator
voltage to frequency converter using ic 555 timer
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F1-22
Abstract: TI Assembly Factory Code
Text: TI 3mm FLANGED BASED LEDs COLOR CODE LEGEND PART NUMBER SELECTION GUIDE OPTIONS SERIES Fl 24 CG5 - 5V - P COLOR -CODE (SEE LEGEND) CODE CR5 CY5 CG5 SER IES 2 MULTICHIP F122 4 MULTICHIP F124 ELECTRICAL C H A R AC TER ISTIC S C O LO R CO D E [2] [5] [7]
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CUB500
10-12mA
S453705
0000L
F1-22
TI Assembly Factory Code
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29f800bb
Abstract: IC 555 architecture 29f800bb55 29F800BB-55
Text: AMD3 Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F800B
8-Bit/512
16-Bit)
Am29F800
29f800bb
IC 555 architecture
29f800bb55
29F800BB-55
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3300S
Abstract: No abstract text available
Text: Panasonic A lum inum Electrolytic C apacitors/FC Aluminum Electrolytic Capacitors Radial Lead Type Japan Series: FC Type A (Radial Leads) sty le 04/JIS C 5141 Low im pedance High Reliability For Power Supply • Features • Low im pedance • Life tim e: 1000 h to 5000 h at 105 °C
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04/JIS
3300S
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PKZ connector
Abstract: No abstract text available
Text: D-SUBMINIATURE COMBINATION CONNECTORS Contents: Specifications Selection Guide Part Number Selection System Signal Contact M odifiers and Size 8 Contact Modifiers Part Number Example Shell Dim ensions M ounting Hardware O ptions D-subm iniature Guide Pin Plates
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MlL-C-24308,
PKZ connector
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29lv200
Abstract: AM29LV200BT-50R IC 555 architecture
Text: AMDJ1 Am29LV200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and w rite operations for battery-pow ered applications ■ ■ Top or bottom boot block configurations
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Am29LV200B
8-Bit/128
16-Bit)
29LV200
20-year
AM29LV200BT-50R
IC 555 architecture
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CL-GD5200
Abstract: SC11487 NATIONAL SEMICONDUCTOR MARKING CODE lob cirrus Logic Marking Code GD5200 74HC CSR13G106KM RS-343A SC114 to-236 marking code B3
Text: OEC 11 »92 CL-GD5200 Preliminary Data Sheet CIRRUS LOGIC FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 256 x 18-blt Color Lookup RAM Triple 8-bit D/A conveners 80-MHz operation for analog outputs 80-MHz operation for pixel clock input Multime
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CL-GD5200
18-blt
80-MHz
RS-343A/RS-170-compatlble
Bt476
SC11487â
44-pin
Bt476-compatible
28-pin
SC11487
NATIONAL SEMICONDUCTOR MARKING CODE lob
cirrus Logic Marking Code
GD5200
74HC
CSR13G106KM
RS-343A
SC114
to-236 marking code B3
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Untitled
Abstract: No abstract text available
Text: AMDH Am29F200A 2 Megabit 256 K X S-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC standards
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Am29F200A
S-Bit/128
16-Bit)
44-pin
48-pin
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Am2F010
Abstract: AM29F010 AM29F01055 am29f010-90 AM29F010-70 Am29F010 Rev A
Text: FINA AMDB Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V +10% for read, erase, and program operations — Simplifies system-level power requirements
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Am29F010
Am2F010
AM29F01055
am29f010-90
AM29F010-70
Am29F010 Rev A
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PKG.4B.340.LLLM92Z LEMO
Abstract: 5b560 80285 BALMAR avional 14
Text: B Series Part Numbering/Specifying Guidelines INTRODUCTION The LEMO B Series Connector program offers considerable versatility and flexibility through the use of a variety of options and accessories. The part numbering system is both complex and powerful as a means of accurately
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the02
444-LEMO
PKG.4B.340.LLLM92Z LEMO
5b560
80285
BALMAR
avional 14
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Untitled
Abstract: No abstract text available
Text: AMD il PRELIM IN ARY Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
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Am29SL800C
8-Bit/512
16-Bit)
29SL800B
FBB048:
29SL800C
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29F400 amd 20185
Abstract: No abstract text available
Text: PRELIMINARY AM D i i Am29F400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F400B
8-Bit/256
16-Bit)
29F400
29F400B
29F400 amd 20185
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am29f016b-75
Abstract: 29f016b
Text: AM D 3 A m 29F 016B 16 Megabit 2 M x 8-Btt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F016
CS39S
20-year
Am29F016B
am29f016b-75
29f016b
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IC 555 architecture
Abstract: No abstract text available
Text: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■
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Am29LV001
IC 555 architecture
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Untitled
Abstract: No abstract text available
Text: AMDil A m 2 9 L V 0 1 0 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV010B
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMD£I Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • ■ ■ Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200
8-Bit/128
16-Bit)
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