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    554 -1 TRANSISTOR Search Results

    554 -1 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    554 -1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 554

    Abstract: 554 -1 transistor F1042 Q62702-F1042 bf554
    Text: NPN Silicon RF Transistor ● BF 554 For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 554 CC Q62702-F1042 B SOT-23 E C Maximum Ratings


    Original     		PDF Q62702-F1042 OT-23 transistor 554 554 -1 transistor F1042 Q62702-F1042 bf554

    High frequency transistors

    Abstract: No abstract text available
    Text: BF 554 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung NPN 250 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca.


    Original     		PDF OT-23 O-236) UL94V-0 High frequency transistors

    transistor 554

    Abstract: UMS1N FMS1A silicon pnp transistor 2SA1037AK
    Text: Transistors Emitter common dual transistors UMS1N / FMS1A FFeatures 1) Two 2SA1037AK chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor The following characteristics apply to


    Original     		PDF 2SA1037AK 96-421-A22) transistor 554 UMS1N FMS1A silicon pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23


    OCR Scan     		PDF Q62702-F1042 OT-23 S35hDS fl235bDS

    Untitled

    Abstract: No abstract text available
    Text: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary


    OCR Scan     		PDF MHM8N20HX, MHM8P20HX,

    Untitled

    Abstract: No abstract text available
    Text: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package


    OCR Scan     		PDF IRF820 IRFS22 IRF823 O-220AB C-307 IRF820, IRF821, IRF822, IRF823 C-308

    12T24

    Abstract: 2012S12 bt 1224 2005S12 2005S24 2005S48 2006S12 2006S24 2006S48 2506S
    Text: Distributed By: E . J. W olfe E nterprises, Inc. - info@ bjw e.com , 800 554-1224, Fax (818) 889-8417 W M m ► W ide 2:1 Input Voltage Range ► Input 7i Filter ► Continuous Short Circuit Protection ► U L 1950 Approved File No. E140645


    OCR Scan     		PDF E140645 MIL-HDBK-217F 4-40X 12T24 2012S12 bt 1224 2005S12 2005S24 2005S48 2006S12 2006S24 2006S48 2506S

    2N4890

    Abstract: 2N4033
    Text: MOTOROLA SC XSTRS/R F lae D | fc,3b?554 00fib452 r-SL'hM 2N4890 CASE 79-04, STYLE 1 TO-39 TO-205AD MAXIMUM RATINGS Symbol Value Unft Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Vebo 5.0 . Vdc Rating Collector Current — Continuous


    OCR Scan     		PDF 00fib452 2N4890 O-205AD) 2N4033 2N4890

    MRF262

    Abstract: MRF261 MRF260 MRF262 equivalent MRF264 J243 BH Rf transistor motorola rf Power Transistor TIC 136 Transistor motorola rf device
    Text: I MOTOROLA SC XSTRS/R F 4 bE b3b?554 00^4541 5 D MOTOROLA -T-33» SEMICONDUCTOR TECHNICAL DATA -cn MRF261 The RF Line 10 W 1 3 6 -1 7 5 M Hz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . desig n ed fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li­


    OCR Scan     		PDF MRF261 O-220AB MRF260 MRF262 MRF264 OOT4544 T-33-07 MRF261 MRF262 equivalent J243 BH Rf transistor motorola rf Power Transistor TIC 136 Transistor motorola rf device

    Avantek amplifier sft

    Abstract: MIL-HDBK217 AVANTEK utc Avantek* UTC Avantek amplifier transistor 554 transistor D 288 avantek Low Noise Amplifier
    Text: AVANTEK INC A V A M 44E I • UMMbh C0C8 0Ï7 7 « A V A UTO/UTC 554 Series Thln-Ftlm Cascadable Amplifier 5 to 500 MHz _ , • T E K - T . m - c p 1-01 FEATURES APPLICATIONS • • • • • • IF/RF Amplification • High Efficiency Frequency Range: 5 to 500 MHz


    OCR Scan     		PDF

    2N5835

    Abstract: 2N5836 M0330 2N5837 210,Motorola MRF5836HX MRF5836HXV VC80 qosmos To-206AF
    Text: MOTOROLA SC XSTRS/R F MfciE b3b?554 D GO^MDTS MOTOROLA -F - 3 SEMICONDUCTOR ä • flOTb 1- 0 / 2N5835 2N5836 2N5837 TECHNICAL DATA The RF Line 2.5 G H z @ 10 m A d c - 2 N 5 8 3 5 2 .0 G H z @ 5 0 m A d c - 2 N 5 8 3 6 1.7 G H z @ 1 0 0 m A dc - 2 N 5 8 3 7


    OCR Scan     		PDF 2N5835 2N5836 2N5837 2N5835 2N5836 MIL-S-19500 2N5835, 2N5836, M0330 2N5837 210,Motorola MRF5836HX MRF5836HXV VC80 qosmos To-206AF

    2SB554

    Abstract: toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R
    Text: 2 / U D > P N P = « f f i i b « . W h 5 ^ y 7 >‘9 SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR 2SB o 554 U n i t i n mm o 0 2 5 .0 MAX . P ow er A m p l i f i e r A p p l i c a t i o n s 3 • u ? milite a : * è i S iB - E - t - t o 0 2 1 .0 MAX Hr : P c = 150W


    OCR Scan     		PDF 2sb554 -10mA, -10V-IBf= 2SB554 S8B554â -20mA toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R

    Untitled

    Abstract: No abstract text available
    Text: T -3 1 -17 NPN Silicon RF Transistor 35E D • ' BF554 flS3b350 00Ib737 fl 1 S I P _ SIEMENS/ SPCLi SEMICONDS • General RF small-signal applications up to 300 MHz, amplifier, mixer and oscillator in circuits Type Marking Ordering code for versions In bulk


    OCR Scan     		PDF BF554 flS3b350 00Ib737 Q62702-F551 Q62702-F1042 fl23b es-10

    BF493

    Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.


    OCR Scan     		PDF 1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BF493 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553 ZTX554

    Untitled

    Abstract: No abstract text available
    Text: KST20 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: C haracteristic Symbol Rating Unit VcEO 40 4 100 350 150 V V mA mW •c Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST20 OT-23 KST3904 100KHz

    transistor c925

    Abstract: DIODE C921
    Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		PDF IRGBC30KD2-S -10ns D020717 SMD-220 C-928 transistor c925 DIODE C921

    transistor 554

    Abstract: 554 -1 transistor transistor pnp
    Text: DTA144TSA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in SPT (SC-72) package DTA144TSA (SPT) a built-in bias resistor allows inverter circuit configuration without external input resistors /FU bias resistor consists of a thin-film


    OCR Scan     		PDF DTA144TSA SC-72) 25-qt DTA144TSA transistor 554 554 -1 transistor transistor pnp

    Untitled

    Abstract: No abstract text available
    Text: KSE45H SER IES PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER APPLICATION AND SWITCHING • Low Coltector-Emitter Saturation Voltage : VCE sat = -1V (MAX)@-8A • Fast Switching Speeds ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Emitter Voltage :KSE45H1,2


    OCR Scan     		PDF KSE45H KSE45H1 KSE45H

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN2925 _ _ _ 2SC4257 NPN Triple Diffused Planar Silicon Transistor SANYO i 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications F e a tu re s •High breakdown voltage • Small Cob ■Wide ASO • High reliability Adoption of HVP process


    OCR Scan     		PDF EN2925 2SC4257 200V/30mA 100pA 2010C T0220AB D148MO

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ISSUE* -JUNE 1996_ O_ C O M PLEM EN TA R Y T Y P E - BSR40 PARTM ARKIN G D E T A IL - BR1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage


    OCR Scan     		PDF BSR30 BSR40 -150mA, -15mA -500mA, -50mA -100nA, -100mA, -500mA -50mA,

    2n4401 331

    Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
    Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B

    2SC1413

    Abstract: c 1413 a 2sc1413a 1413A
    Text: 2SC1413, 2SC1413A L 2SC 1413,1413A NPN POWER TRANSISTORS High Voltage Power Switching and TV Horizontal Deflection Output Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22.22 8,50 6.35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5.72 5.20 16,64 17,15 11,15 12,25


    OCR Scan     		PDF 2SC1413, 2SC1413A 2SC1413 c 1413 a 2sc1413a 1413A

    55461HM

    Abstract: 55461RM 75461RC 75461TC 55461 75461 fairchild 55461 c
    Text: 55/75460 • 55/75461 • 55/75462 55/75463 • 55/75464 DUAL HIGH VOLTAGE HIGH CURRENT'PERIPHERAL DRIVERS FAIRCHILD LINEAR I N T E G R A T E D CI RC UIT S G E N E R A L D E S C R IP T IO N — The 5 5 /7 5 4 6 0 Peripheral Driver Series converts T T L and D T L logic levels to H IG H voltage, H IG H current levels. The


    OCR Scan     		PDF VS-10 55461HM 55461RM 75461RC 75461TC 55461 75461 fairchild 55461 c

    S100 NPN Transistor

    Abstract: No abstract text available
    Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .


    OCR Scan     		PDF GGQ4507 E--08 S100 NPN Transistor