Untitled
Abstract: No abstract text available
Text: KM684000/L/L-L CMOS SRAM 524, 288 WORD X 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550juW(Max.) L-Version 110/*W(Max.) L-L-Verslon Operating
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KM684000/L/L-L
100ns
550juW
385mW
684000LP/LP-L
32-DIP-600
KM684000G/LG/LG-L
32-SOP-525
KM684000T/LT/LT-L
32-TSOP2-400F
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D27C64
Abstract: intel D27c64 rt 7257 NEC D27C64 ha 11747 D27C64 intel nec A2C 71454 upd27c64
Text: ì ; SEC OM ,y NEC Electronics Inc. 006074 Pin C onfiguration A d is tin c tiv e fe atu re o f the ¿/PD27C64 is an o u tp u t enable OE separate fro m the c h ip enable (CE). The OE c o n tro l elim ina tes bus c o n te n tio n in m u ltip le -b u s m icro p ro c e s s o r systems. The//P D 27C 6 4 features fast,
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27C64
uPD27C64
536-bit
/PD27C64
D27C64
intel D27c64
rt 7257
NEC D27C64
ha 11747
D27C64 intel
nec A2C
71454
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MBM27C512-25
Abstract: 27C512-20
Text: CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY MBM 27C512-20-W MBM27C512-25-W August 1988 Edition 1.0 CMOS524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 b it static CMOS erasable and e lectrically reprogrammable read only memory EPROM}. It is especially
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524288-BIT
27C512-20-W
MBM27C512-25-W
CMOS524288
27C512
28-pin
32-Pad
27C512.
th02233190
MBM27C512-25
27C512-20
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Untitled
Abstract: No abstract text available
Text: FU JITSU CMOS UV ERASABLE 524288-B IT READ ONLY MEMORY M BM 27C512-20-W MBM27C512-25-W A ugust 1988 E d itio n 1.0 CMOS 524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 bit static CMOS erasable
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524288-B
27C512-20-W
MBM27C512-25-W
27C512
28-pin
32-Pad
27C512.
32PLCS)
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