ay-5-1012
Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS
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38510/MACH
Mll-M-38510
Z501300
Z501200
Z501201
Z012510
ZOl1510
ay-5-1012
ali m 3329
PROCESSOR ALI 3329
ali 3329 b
ali 3329
SN74188
sn74s188
str 52100
SN7452
replacement of bel 187 transistor
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16x4
Abstract: 16384x1 ram
Text: Bipolar Memory Bipolar Memory RAM Functional Index and Selection Guide Part Number RAM B IP O L A R E C L R A M A c c e s s Tim e Iee C O M ’ L/M IL C O M ’L/M IL O rganization Max Max ECL Serie« Number o f P in s Packages -1 5 0 /-1 6 5 10K 16 d ,p ,f ,l
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Am10415SA
Am10415A
104l5
Am100415A
Am100415
Am10470SA
0470A
Am10470
100470S
Am100470A
16x4
16384x1 ram
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74s188 programming
Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE
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38510/MACH
MIL-M-38510
74s188 programming
74S471
N82S06
74S470
dip18 package
str 52100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
74S472 PROM PROGRAMMING
8080a
74S287 programming instructions
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MM4220DF/MM5220DF
Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.
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360746lat
MM4220DF/MM5220DF
mm5221
MM4240
DS8807
MM5017
54S287
MM1402a equivalent
transistor bf 175
MM74C920
MM5061
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dm8130
Abstract: 54175 DM74367 KS 2102 7486 ic truth table signetics 2502 ci 8602 gn block diagram ci 8602 gn 74s281 DM74LS76
Text: 19 7 6 N atio n al S e m ico n d u cto r C o rp . p 1 ? I m • ' % TTL Data Book D EV IC E MIL i 2502 2503 2504 5400 54H00 54L00 54LS00 5401 54H01 54L01 54LS01 5402 54L02 54LS02 5403 54L03 54LS03 5404 54H04 54L04 54LS04 5405 54H05 54L05 54LS05 5406 5407 5408
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54H00
54L00
54LS00
54H01
54L01
54LS01
54L02
54LS02
54L03
54LS03
dm8130
54175
DM74367
KS 2102
7486 ic truth table
signetics 2502
ci 8602 gn block diagram
ci 8602 gn
74s281
DM74LS76
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DM74367
Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Text: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,
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6301-1 prom
Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im m e d ia te ly a va ila b le by fo llo w in g th e fu s in g
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8192-BIT
1024x8)
82HS181/82HS181A
82HS181
N82HS185
N82S25
N82S16
TBP18SA030J,
6301-1 prom
3622 prom
mmi 3601
PROM 3601
intel 3601 PROM
PROM intel 3601
9344C
N82S141
74S189
N82S137
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N82S191
Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate ly available by following the fusing proce dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.
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384-BIT
2048x8)
82S191
82S191
N82S191
N82HS185
N82S25
N82S16
6301-1 prom
SIGNETICS prom
6331-1
PROM intel 3601
SIGNETICS prom n82s141
74S200
HM76161-5
93427C
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54S38
Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Text: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S
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38510/M
D012510
D011520
D011510
54S38
SN74298
SN74265
54175
NES 1004 naval specification
74L95
Transistor AF 138
07802-1
SN7437
SN54LS195A
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N82S141
Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ly available by fo llo w in g th e fu sin g p roce
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8192-BIT
2048x4)
82HS185/82HS185A
82HS185
N82HS185
N82S25
N82S16
TBP18SA030J,
N82S141
93427c
6331-1
N82S137
mmi 6301-1
74S200
N82S129
74S206
MMI 6341-1
AM27S29C
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Untitled
Abstract: No abstract text available
Text: 289 CONNECTION DIAGRAM PINOUT A 54S/74S289 b i 1 5 4 L S /7 4 L S 2 8 9 C u <7 ao[T T i l vcc 64-BIT RANDOM ACCESS MEMORY «D E Tsl Ai With O pen-Collector Outputs WE [ T 14] A 2 Di [7 13] A 3 0 ,[T T2ID 4 D2 [ ? T T lo a Ö2 U Tö] D 3 D ESC R IPTIO N — The '289 is a high speed 64-bit RAM organized as a 16word by 4-b it array. Address inputs are buffered to minim ize loading, and
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54S/74S289
64-BIT
16word
54/74S
54/74LS
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2650B
Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
Text: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the
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74LS189 equivalent
Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.
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AMD-599
LM101
SN54LS01
132nd
74LS189 equivalent
74LS200
AmZ8036
Z8104
74LS300
AM9511
Am2505
27s13
54S244
27LS00
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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N82S181
Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.
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8192-BIT
1024x8)
82S180
/82S181
82S180
82S181
N82S181
N82S141
74S200
mmi 3601
6331-1 prom
tbp24sa10
93427C
n82s147
MMI 6330
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74LS289
Abstract: 74S289PC 54LS289DM 54S289DM 74LS289DC 74LS289FC 74LS289PC 74S289DC 74S289FC S289T
Text: 289 b 11 54S/74S289 54LS /74LS 289 <T' C O N N E C T IO N D IA G R A M P IN O U T A U <7 ao[T 64-BIT RANDOM ACCESS MEMORY Til vcc Tsl Ai csGE 771 A2 771 a 3 T2ID4 [7 [7 5, [I 02 [][ 52|T W ith O p e n -C o lle c to r O utputs we Oi D E S C R IP T IO N — T he ’289 is a h igh speed 6 4 -b it RAM o rg a n ize d as a 16w o rd by 4 -b it array. A d d re ss in p u ts are b u ffe re d to m in im ize lo a d in g , and
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54S/74S289
54LS/74LS289
64-BIT
16-word
54/74S
54/74LS
74LS289
74S289PC
54LS289DM
54S289DM
74LS289DC
74LS289FC
74LS289PC
74S289DC
74S289FC
S289T
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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