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    5401 TRANSISTOR DATASHEET Search Results

    5401 TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5401 TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP


    Original     		PDF WBFBP-06C FMMDT5451 WBFBP-06C 5551-Type 5401-Type -10mA 100MHz

    PNP5401

    Abstract: J-STD-020A MMDT5451 code marking KNM BR 5551
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363, J-STD-020A MIL-STD-202, NPN5551) PNP5401) PNP5401 J-STD-020A MMDT5451 code marking KNM BR 5551

    BR 5551

    Abstract: code marking KNM BR N 5551
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, J-STD-020A MIL-STD-202, MMMDT5451 MMDT5451-7 BR 5551 code marking KNM BR N 5551

    code marking KNM

    Abstract: Surface mount NPN/PNP complementary transistor MMDT5451 PNP5401
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Complementary Pair One 5551-Type NPN One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, DS30171 code marking KNM Surface mount NPN/PNP complementary transistor MMDT5451 PNP5401

    transistor 5551

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 OT-363, J-STD-020A MIL-STD-202, DS30171 MMDT5451-7 transistor 5551

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Complementary Pair One 5551-Type NPN One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package


    Original     		PDF MMDT5451 5551-Type 5401-Type PNP5401 NPN5551 OT-363 DS30171

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, PNP5401)

    MMDT5451

    Abstract: NPN5551
    Text: SPICE MODEL: MMDT5451 MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C PNP5401) MMDT5451 NPN5551

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: MMDT5451 MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type OT-363 J-STD-020C MIL-STD-202, DS30171

    Untitled

    Abstract: No abstract text available
    Text: MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Complementary Pair One 5551-Type NPN One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching


    Original     		PDF MMDT5451 5551-Type 5401-Type PNP5401 NPN5551 OT-363 DS30171

    transistor 5401

    Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
    Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


    Original     		PDF 2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application

    2n5401y

    Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5401 MMBT5401 2N5401 OT-23 2N5401YBU 2N5401RM 2N5401CH1TA 2n5401y 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 5401 GM

    mark 2L SOT-23

    Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5401 MMBT5401 2N5401 OT-23 2N5401RA 2N5401BU 2N5401RM 2N5401TF mark 2L SOT-23 MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6

    SMD TRANSISTOR MARKING 9b

    Abstract: SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE 42 SMD TRANSISTOR MARKING 9B NPN SMD TRANSISTOR MARKING 76 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification PNP BISS transistor PMMT591A FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D088 PMMT591A PMMT491A. PMMT591A SMD TRANSISTOR MARKING 9b SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE 42 SMD TRANSISTOR MARKING 9B NPN SMD TRANSISTOR MARKING 76 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP

    *C945P

    Abstract: Philips TO-92 MARKING CODE W 2PA733P 2PC945P TRANSISTOR D 471 9340 350 20126 ST 9340 2PC945
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING


    Original     		PDF M3D186 2PC945 2PA733. 2PC945 MAM259 01-May-99) *C945P Philips TO-92 MARKING CODE W 2PA733P 2PC945P TRANSISTOR D 471 9340 350 20126 ST 9340

    design ideas

    Abstract: TS16949 ZXTN5551G ZXTP5401G
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTC ZXTP5401GTA D-81541 design ideas TS16949 ZXTN5551G ZXTP5401G

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTA ZXTP5401GTC D-81541

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A


    Original     		PDF M3D034 RZ1214B65Y OT443

    702 TRANSISTOR smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current max. 100 mA handbook, halfpage


    Original     		PDF M3D088 BSR12 BSR12 MAM256 BSR12/C ICP1020807 01-Jul-2011 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N smd transistor marking B5 702 N smd transistor TRANSISTOR SMD MARKING CODE LF 70.2 TRANSISTOR smd 702 k TRANSISTOR smd 702 transistor smd code

    2N7002 Philips

    Abstract: 03aa03 philips 2n7002
    Text: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.


    Original     		PDF 2N7002 2N7002 03ab44 2N7002 Philips 03aa03 philips 2n7002

    BSH112

    Abstract: No abstract text available
    Text: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.


    Original     		PDF BSH112 M3D088 BSH112

    Untitled

    Abstract: No abstract text available
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


    Original     		PDF BST82 BST82 03ab44

    BST82

    Abstract: HZG303
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


    Original     		PDF BST82 BST82 03ab44 HZG303

    2N7000 MOSFET

    Abstract: Mosfet 2n7000
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		PDF 2N7000 2N7000 03ab40 2N7000 MOSFET Mosfet 2n7000