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    54-PIN TSOP THERMAL RESISTANCE JUNCTION TO CASE Search Results

    54-PIN TSOP THERMAL RESISTANCE JUNCTION TO CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    54-PIN TSOP THERMAL RESISTANCE JUNCTION TO CASE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    QFP160-P-2828-0

    Abstract: QFP304 TSOP 66 pin Package thermal resistance TSOP 48 thermal resistance bga 208 PACKAGE QFJ32-P-R450-1 SDIP64-P-750-1 SOJ28-P-400-1 QFP208-P-2828-0 TSOP 48 thermal resistance junction to case
    Text: This version: Apr. 2001 Previous version:Jun. 1997 PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE This document is Chapter 5 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE


    Original     		PDF

    TSOP II 54

    Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L/CY14B104N TSOP II 54 TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance PDF

    TSOP 54 PIN

    Abstract: TSOP 54 Package CY14B104L CY14B104N
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N TSOP 54 PIN TSOP 54 Package CY14B104L CY14B104N PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L/CY14B104N PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L, CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E108L, CY14E108N 1024K 8/512K CY14E108L) CY14E108N) CY14E108L/CY14E108N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGS4141N, NVGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • NV Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and


    Original     		NTGS4141N, NVGS4141N NTGS4141N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E108L, CY14E108N 1024K 8/512K CY14E108L) CY14E108N) CY14E108L/CY14E108N PDF

    TSOP 54 thermal resistance

    Abstract: CY7C1069BV33-10ZI SRAM 54-PIN CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZXC TSOP 54 Package used in where TSOP 48 thermal resistance
    Text: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE


    Original     		CY7C1069BV33 16-Mbit CY7C1069BV33 TSOP 54 thermal resistance CY7C1069BV33-10ZI SRAM 54-PIN CY7C1069BV33-10ZC CY7C1069BV33-10ZXC TSOP 54 Package used in where TSOP 48 thermal resistance PDF

    TSOP 54 Package used in where

    Abstract: 54-pin TSOP thermal resistance junction to case TSOP 54 thermal resistance CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZI CY7C1069BV33-10ZXC SRAM 54-PIN TSOP
    Text: CY7C1069BV33 16-Mbit 2M x 8 Static RAM Features Functional Description • High speed The CY7C1069BV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE


    Original     		CY7C1069BV33 16-Mbit CY7C1069BV33 TSOP 54 Package used in where 54-pin TSOP thermal resistance junction to case TSOP 54 thermal resistance CY7C1069BV33-10ZC CY7C1069BV33-10ZI CY7C1069BV33-10ZXC SRAM 54-PIN TSOP PDF

    CY14B108N-BA25XI

    Abstract: 54TSOP
    Text: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N CY14B108N-BA25XI 54TSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14E104L/CY14E104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E104L/CY14E104N 8/256K CY14E104L) CY14E104N) CY14E104L/CY14E104N PDF

    CY14B104L

    Abstract: CY14B104N
    Text: PRELIMINARY CY14B104L, CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N CY14B104L CY14B104N PDF

    TSOP 54 Package

    Abstract: TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package
    Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor


    Original     		CY14B104L/CY14B104N 8/256K CY14B104L/CY14B104N to10ns to15ns TSOP 54 Package TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package PDF

    TSOP 54 Package

    Abstract: CY14B104L CY14B104N
    Text: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N TSOP 54 Package CY14B104L CY14B104N PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L/CY14B104N PDF

    NTGS4141NT1G

    Abstract: NTGS4141N NTGS4141NT1
    Text: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS • Load Switch • Notebook PC • Desktop PC ID MAX 21.5 mW @ 10 V


    Original     		NTGS4141N NTGS4141N/D NTGS4141NT1G NTGS4141N NTGS4141NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14E102L, CY14E102N 2-Mbit 256K x 8/128K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 256K x 8 (CY14E102L) or 128K x 16 (CY14E102N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E102L, CY14E102N 8/128K CY14E102L/CY14E102N PDF

    CY14B102N

    Abstract: CY14B102L
    Text: ADVANCE CY14B102L, CY14B102N 2-Mbit 256K x 8/128K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 256K x 8 (CY14B102L) or 128K x 16 (CY14B102N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B102L, CY14B102N 8/128K CY14B102L) CY14B102N) CY14B102L/CY14B102N CY14B102N CY14B102L PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1069G CY7C1069GE PRELIMINARY 16-Mbit 2 M words x 8 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features an error indication pin (ERR) that signals the host processor in the case of an ECC error-detection and correction event.


    Original     		CY7C1069G CY7C1069GE 16-Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS • Load Switch • Notebook PC • Desktop PC ID MAX 21.5 mW @ 10 V


    Original     		NTGS4141N NTGS4141N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features • Low RDS on • Low Gate Charge • Pb−Free Package is Available http://onsemi.com Applications V(BR)DSS • Load Switch • Notebook PC • Desktop PC RDS(on) TYP ID MAX 21.5 mW @ 10 V


    Original     		NTGS4141N NTGS4141N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT5C256K16B2 256K X 16 SRAM |u i i c : r o n 2 5 6 K x 16 S R A M SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 12,1 5 , 20, 25 and 35ns • Multiple center power and ground pins for improved noise immunity • Single +5V ±10% power supply


    OCR Scan     		MT5C256K16B2 54-Pin PDF