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    53C13 Search Results

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    53C13 Price and Stock

    Elesa SPA CE.81253-C1-3N

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    Elesa SPA CE.90153-C1-3N

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    Elesa SPA CE.80253-C1-3N

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    Elesa SPA CE.91653-C1-3N

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    Elesa SPA CE.90653-C1-3N

    DD50, MECHANICAL POSITION INDICA
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    53C13 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    53C135K Honeywell Sensing and Productivity Solutions Potentiometers, Variable Resistors - Rotary Potentiometers, Rheostats - POT 35K OHM 2W PLASTIC LINEAR Original PDF

    53C13 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C0805C334K5RACTU C0805C334K5RAC7800 Capacitor, ceramic, 0.33 uF, +/-10% Tol, 50V, X7R, 0805 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original
    C0805C334K5RACTU C0805C334K5RAC7800) 53c13af5-b9cb-4ac5-ab36-c96dd6adf20d PDF

    clarostat POTENTIOMETER 50k

    Abstract: clarostat 62ja-50K ohm RV4NAYSD clarostat 53c1 Clarostat type J RV4NAYSD 10K clarostat 58c clarostat RV4 potentiometers clarostat potentiometer type j rv4 potentiometer mechanical rotation
    Text: Potentiometers 53/RV4 Series Conductive Plastic Military Potentiometers 43C Series 2-Watt Wirewound 53/RV4 Series NOTE: Direct Cross to Hot-Molded Carbon Composition “J” Pots 53/RV4 is a dual-marked, conductive plastic potentiometer offering a long rotational life and manufactured to MIL-R-94 specifications. Tolerance: ±10%,


    Original
    53/RV4 MIL-R-94 MIL-R-94D. 53C2/RV4LAYSA 62JA-100 62JA-200 62JA-250 62JA-500 clarostat POTENTIOMETER 50k clarostat 62ja-50K ohm RV4NAYSD clarostat 53c1 Clarostat type J RV4NAYSD 10K clarostat 58c clarostat RV4 potentiometers clarostat potentiometer type j rv4 potentiometer mechanical rotation PDF

    Untitled

    Abstract: No abstract text available
    Text: bhi.53c131 QOSTSHT ?D2 BB A P X Philips Semiconductors Product specification UHF push-pull power transistor — — — — — FEATURES — H BLV945A AMER PHILIPS/DISCRETE b^E J> ' QUICK REFERENCE DATA • Double internal input matching for easy matching and high gain


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    BLV945A MRC106 PDF

    smd npn darlington

    Abstract: smd .652 BDS644 BDS646 BDS648 BDS650 BDS652 IEC134
    Text: Philips Components Data sheet status Product specification date of issue April 1991 BDS644/646/648/650/652 PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 PNP Silicon epitaxial base transistors in a monolithic Darlington circuit in a


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    BDS644/646/648/650/652 OT223) BDS643/645/647/649/651. BDS644 BDS646 BDS648 BDS650 BDS652 smd npn darlington smd .652 BDS644 BDS646 BDS648 BDS650 BDS652 IEC134 PDF

    uhf vhf booster

    Abstract: UCD445 philips if catv amplifier DD32512 OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module
    Text: Philips Semiconductors bbâ^^Bl DD32512 T SD H APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE ]> PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology


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    DD32512 OM2070B MCD444 hbS3T31 D03E517 uhf vhf booster UCD445 philips if catv amplifier OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module PDF

    philips resistor 2322 763

    Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
    Text: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage


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    BFG97 OT223 BFG31. OT223 philips resistor 2322 763 bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S PDF

    BAV10

    Abstract: BAW62 bu 11 apx
    Text: • bbSB'ìBl GOSbe1^ IDI * A P X N AMER PHILIPS/DISCRETE BAV10 b^E D > ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, u ltra -high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories.


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    BAV10 DO-35 BAV10 DO-35 100XL -00mA BAW62 bu 11 apx PDF