Contextual Info: bhi.53c131 QOSTSHT ?D2 BB A P X Philips Semiconductors Product specification UHF push-pull power transistor — — — — — FEATURES — H BLV945A AMER PHILIPS/DISCRETE b^E J> ' QUICK REFERENCE DATA • Double internal input matching for easy matching and high gain

Contextual Info: KEMET Part Number: C0805C334K5RACTU C0805C334K5RAC7800 Capacitor, ceramic, 0.33 uF, +/-10% Tol, 50V, X7R, 0805 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications

clarostat POTENTIOMETER 50k

Abstract: clarostat 62ja-50K ohm RV4NAYSD clarostat 53c1 Clarostat type J RV4NAYSD 10K clarostat 58c clarostat RV4 potentiometers clarostat potentiometer type j rv4 potentiometer mechanical rotation
Contextual Info: Potentiometers 53/RV4 Series Conductive Plastic Military Potentiometers 43C Series 2-Watt Wirewound 53/RV4 Series NOTE: Direct Cross to Hot-Molded Carbon Composition “J” Pots 53/RV4 is a dual-marked, conductive plastic potentiometer offering a long rotational life and manufactured to MIL-R-94 specifications. Tolerance: ±10%,

smd npn darlington

Abstract: smd .652 BDS644 BDS646 BDS648 BDS650 BDS652 IEC134
Contextual Info: Philips Components Data sheet status Product specification date of issue April 1991 BDS644/646/648/650/652 PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 PNP Silicon epitaxial base transistors in a monolithic Darlington circuit in a

uhf vhf booster

Abstract: UCD445 philips if catv amplifier DD32512 OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module
Contextual Info: Philips Semiconductors bbâ^^Bl DD32512 T SD H APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE ]> PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology

philips resistor 2322 763

Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Contextual Info: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

BAV10

Abstract: BAW62 bu 11 apx
Contextual Info: • bbSB'ìBl GOSbe1^ IDI * A P X N AMER PHILIPS/DISCRETE BAV10 b^E D > ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, u ltra -high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories.