IN 5399 TL
Abstract: 5397
Text: 1N5391 thru 1N5399 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 25 A VF 1.4 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current
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1N5391
1N5399
DO-204AL
DO-41)
DO-204AL,
UL-94V-0
J-STD-002B
MIL-STD-750,
IN 5399 TL
5397
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1N5390
Abstract: diode in 5392 1N5391 1N5399
Text: 1N5391 . 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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1N5391
1N5399
DO-15
1N5390
1N5390
diode in 5392
1N5391
1N5399
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1N5390
Abstract: 1N5391 1N5399
Text: 1N5391 . 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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1N5391
1N5399
DO-15
1N5390
1N5390
1N5391
1N5399
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diode in 5395
Abstract: 1N5391 1N5399
Text: Certificate TH97/10561QM 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * Certificate TW00/17276EM High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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TH97/10561QM
1N5391
1N5399
TW00/17276EM
DO-41
UL94V-O
MIL-STD-202,
diode in 5395
1N5399
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Untitled
Abstract: No abstract text available
Text: TH97/2478 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * IATF 0113686 SGS TH07/1033 TH09/2479 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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TH97/2478
1N5391
1N5399
TH07/1033
TH09/2479
DO-41
UL94V-O
MIL-STD-202,
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1N5391
Abstract: 1N5399 A-405
Text: LESHAN RADIO COMPANY, LTD. 1N5391 thru 1N5399 General Purpose Plastic Rectifiers 1.FEATURES * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.5A Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique
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1N5391
1N5399
DO-15,
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
1N5399
A-405
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diode IN 5397
Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode IN 5397
1N 5392 DIODE
diode in 5392
T3 marking
1N 4000 diode
diode 1n5392
diode 1n5397
1N5392-T3
1N5392-TB
1N5399
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Untitled
Abstract: No abstract text available
Text: 1N5391 – 1N5399 1.5A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
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LT3973-3.3
Abstract: 9551 10613 diode 1334 D1029N D2209N D2659N D4401N D660N D748N
Text: M3 - Schaltung ~ Anschlußspannung ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]
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D748N
D660N
D1029N
D2209N
Schal659N
D4401N
LT3973-3.3
9551
10613
diode 1334
D1029N
D2209N
D2659N
D4401N
D660N
D748N
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diode 1n5397
Abstract: 1N5392
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-15, Molded Plastic
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode 1n5397
1N5392
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Untitled
Abstract: No abstract text available
Text: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Plastic Material - UL Flammability
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1N5391/S
1N5399/S
DO-41
MIL-STD-202,
DO-15
DO-15
DS28003
1N5391/S-1N5399/S
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D1029N
Abstract: D2209N D2659N D4401N D660N D748N 548 1334 diode
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]
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D748N
D660N
D1029N
D2209N
Thyri50
D1029N
D2209N
D2659N
D4401N
D660N
D748N
548 1334 diode
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Untitled
Abstract: No abstract text available
Text: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Plastic Material - UL Flammability
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1N5391/S
1N5399/S
DO-41
DO-15
MIL-STD-202,
DS28003
1N5391/S-1N5399/S
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diode 1334
Abstract: D1029N D2209N D2659N D4401N D748N 1334 diode
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 844 1132 1182 1446 1901 2965 3215 3690 4067
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diode in 5392
Abstract: diode in 5392 DATA D1029N D2209N D2659N D4401N D748N
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 844 1132 1182 1446 1901 2965 3215 3690 4067
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423suant
diode in 5392
diode in 5392 DATA
D1029N
D2209N
D2659N
D4401N
D748N
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED 08/06/2009 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • • • • • Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 50A Peak Lead Free Finish, RoHS Compliant Note 3
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1N5391/S
1N5399/S
DO-41,
DO-15
J-STD-020C
MIL-STD-202,
DO-41
DO-15
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Untitled
Abstract: No abstract text available
Text: 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop B A A Low Reverse Leakage Current Surge Overload Rating to 50A Peak Lead Free Finish, RoHS Compliant Note 3
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1N5391/S
1N5399/S
DO-41,
DO-15
J-STD-020C
MIL-STD-202,
DO-41
71O-41
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diode in 5392
Abstract: 12 f 5091 509X 5193 y5393
Text: 5SE SIEMENS C M P N T S i OPTO S IE M E N S I • AS3b3St RED HIGH EFFICIENCY RED YELLOW 0D040tb 0 ■ LDR 5091/5092/5093 LDH 5191/5192/5193 LDY 5391/5392/5393 GREEN LDG 5591/5592 im LED LAMP Package Dimensions in Inches mm) .-201 (5.1) . _ ^ Mho* .0 2 4 (0.6)
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0D040tb
diode in 5392
12 f 5091
509X
5193
y5393
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JANTX1N
Abstract: 971B
Text: Microsemi Zener Regulator Diodes ] ZEN M icrosem i D ivision Package O utline j Type Mil Spec Pow er Data S heet ID W Vz (V) Izt (m A) (« ) Zzk <n) Zzt °= f Part N um ber VR (V) Toi. (+/-%) 1N970A Scottsdale DO-35 STD 5392 0.4 24 5.2 33 750 5 18.2 10 1N970A (D 0 7 )
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DO-35
-213AA
O-213AA
DO-213AA
JANTX1N
971B
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12 f 5091
Abstract: diode in 5392 LDR log led diode 3d
Text: SIEMENS CMPNTS-, OPTO 44E D • SIEMENS A23b35b 0DQM'13eJ □ M S I E X RED HIGH EFFICIENCY RED y e llo w LDR 5091/5092/5093 LDH 5191/5192/5193 LDY 5391/5392/5393 GREEN LDG 5591/5592 T1 % LED LAMP FEATURES • • • • • • High Light Output Lightly Tinted Clear Lens
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A23b35b
flt10C
12 f 5091
diode in 5392
LDR log
led diode 3d
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IN5391
Abstract: 1N5390
Text: 1N5391 . 1N5399 FAGOR ^ 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. sf DO-15 Plastic o« a ill_— 6,-35 ±0.2 5 8 .5 Voltage 50 to 1.000 V. Current 1.5 A. at 70°C. 11- 0.5 Mounting instructions 1 . Min. distance from body to soldering point,
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1N5391
1N5399
DO-15
1N5390
IN5391
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diode IN5399
Abstract: IN5399 in5391 diode IN5391 N5399 diode IN5391 diode rectifier in5399 3 Ampere silicon Diode IN5397 20 ampere diode
Text: DIODES LIMITED IN5391 TO IN5399 SERIES FAI RAC RES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847255 SEMICONDUCTOR MANUFACTURERS 1.5 AMPERE SILICON RECTIFIERS With “ LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency
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IN5391
IN5399
1N5931
1N5392
1N5393
1N5395
1N5397
1N5398
1N5399
diode IN5399
in5391 diode
N5399
diode IN5391
diode rectifier in5399
3 Ampere silicon Diode
IN5397
20 ampere diode
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820
BYX22-400
BYX22-600
BYX22-800
BYX26-60
YX26-150
BYX36-1
BYX36-300
1.0 k mef 250
ME4003
ME4002
MA0411
transistor me6101
transistor BC 172B
2N2959
transistor bf 175
2N5173
2n3072
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N5399
Abstract: 1n4365 D0201AD 1N4004 or 1N5404 N5397 1N4140 1N4144 1N4007 DO-41 package 1N4145 681000
Text: S C H O T T K Y R EC T IFIER S OptritlfVfl arvd Vrrm lo Mam Vf Type Package <Vo*» An*) (Amp*) (Volt») 1N5817 D O -4 1 20 1.0 25 .4 5 1a 1N5818 D O -4 1 30 1.0 25 055 1N5019 D O -41 40 1.0 25 0.00 S R I 20 D O -41 20 1.0 40 050 SR130 D O -41 30 1.0
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1N5817
DO-41
1N5818
1N5819
SR130
SR140
N5399
1n4365
D0201AD
1N4004 or 1N5404
N5397
1N4140
1N4144
1N4007 DO-41 package
1N4145
681000
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