80C517A
Abstract: 80C537 C500 EK51 PLCC-84 SAB80C517A 80517 OH51 KeilPK51 MM537
Text: miniMODUL-537 QuickStart Instructions Using PHYTEC FlashTools98 for Windows and the Keil EK51 Software Evaluation Development Tool Chain Note: The PHYTEC Spectrum CD includes the electronic version of the English miniMODUL-537 Hardware Manual Hinweis: Die PHYTEC Spectrum CD beinhaltet die elektronische
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miniMODUL-537
FlashTools98
miniMODUL-537
L-387e
80C517A
80C537
C500
EK51
PLCC-84
SAB80C517A
80517
OH51
KeilPK51
MM537
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hd6475378
Abstract: HD6435378 OMC932723297 CPU H8/532 H8/532 Hitachi H8/532 Hitachi DSA0044 HD6475378F h8-532
Text: OMC932723297 Hitachi Single-Chip Microcomputer H8/537 HD6475378, HD6435378 Hardware Manual ADE-602-065 Preface The H8/537 is a high-performance single-chip Hitachi-original microcomputer, featuring a highspeed CPU with 16-bit internal data paths and a full complement of on-chip supporting modules.
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OMC932723297
H8/537
HD6475378,
HD6435378
ADE-602-065
H8/537
16-bit
CG-84)
FP-80A)
TFP-80C)
hd6475378
HD6435378
OMC932723297
CPU H8/532
H8/532
Hitachi H8/532
Hitachi DSA0044
HD6475378F
h8-532
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scr 2 22m
Abstract: BT 151 PIN DIAGRAM HS538ESC02H SCR TRIGGER PULSE 3 phase BT 136 PIN DIAGRAM DTCR-1 pin diagram of BF 337 transistor HD6475378F 5.1 circuit diagram schematics H8 hitachi assembler
Text: OMC942723155 Hitachi Single-Chip Microcomputer H8/537 HD6475378, HD6435378 Hardware Manual ADE-602-065 Preface The H8/537 is a high-performance single-chip Hitachi-original microcomputer, featuring a highspeed CPU with 16-bit internal data paths and a full complement of on-chip supporting modules.
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OMC942723155
H8/537
HD6475378,
HD6435378
ADE-602-065
H8/537
16-bit
and20
CP-84)
CG-84)
scr 2 22m
BT 151 PIN DIAGRAM
HS538ESC02H
SCR TRIGGER PULSE 3 phase
BT 136 PIN DIAGRAM
DTCR-1
pin diagram of BF 337 transistor
HD6475378F
5.1 circuit diagram schematics
H8 hitachi assembler
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diode SR 315
Abstract: sfh 482 diode E7800 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 tci 537 Q62703-Q1667
Text: SFH 480, SFH 481, SFH 482 SFH 480 SFH 481 SFH 482 fet06092 fet06091 fet06090 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 537
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fet06092
fet06091
fet06090
diode SR 315
sfh 482 diode
E7800
Q62703-Q1088
Q62703-Q1089
Q62703-Q1662
Q62703-Q1663
Q62703-Q1664
tci 537
Q62703-Q1667
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IC 2025
Abstract: transistor 1203 low power fm audio transmitter fm mixer converter GSM Transceiver analog 1ghz modulator TM 1222 transistor for RF amplifier and mixer TM 1298 Frequency Generator 1GHz
Text: Philips Semiconductors Semiconductors for Wireless Communications Functional index PAGE Advanced telephony services ICs PCD3316 Caller-ID on Call Waiting CIDCW receiver 537 Front-ends and Paging UAA3500HL Pager receiver 2319 SA1620 Low voltage GSM front-end transceiver
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PCD3316
UAA3500HL
SA1620
SA1920
SA1921
SA2420
45GHz
SA602A
SA611
SA612A
IC 2025
transistor 1203
low power fm audio transmitter
fm mixer converter
GSM Transceiver
analog 1ghz modulator
TM 1222
transistor for RF amplifier and mixer
TM 1298
Frequency Generator 1GHz
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LTC4230
Abstract: undervoltage release
Text: DEMO CIRCUIT 537 QUICK STARTLTC4230 GUIDE LTC4230 Triple Hot Swap Controller with MultifuncDESCRIPTION Demonstration circuit DC537A is designed to evaluate the performance of the LTC4230 Triple Hot Swap Controller with multifunction current control. The board demonstrates all possible operation
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LTC4230
DC537A
LTC4230
undervoltage release
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Hitachi DSA002758
Abstract: No abstract text available
Text: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537 1st. Edition Features • Low on-resistance R DS on = 0. 2Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline 2SK2802 Absolute Maximum Ratings (Ta = 25°C)
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2SK2802
ADE-208-537
Hitachi DSA002758
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SSD1606
Abstract: No abstract text available
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.
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SSD1606
SSD1606
11-May-11
17-Oct-11
2002/95/EC
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UM0381
Abstract: programmer st10f272 RH3 439 ST10F272 OSC32 ST10F276 CAN bit timing st10 Bootstrap ACC20 ST10 half adder
Text: UM0381 User manual ST10F272 Introduction This manual describes the functionality of the ST10F272 devices. An architectural overview describes the CPU performance, the on-chip system resources, the on-chip clock generator, the on-chip peripheral blocks and the protected bits.
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UM0381
ST10F272
ST10F272
UM0381
programmer st10f272
RH3 439
OSC32
ST10F276 CAN bit timing
st10 Bootstrap
ACC20
ST10
half adder
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fet free
Abstract: SHD226007
Text: SENSITRON SEMICONDUCTOR SHD226007 TECHNICAL DATA DATA SHEET 704, REV. - N-Channel Enhancement Mode Vertical DMOS FET Free From Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability
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SHD226007
SHD226007
O-257
fet free
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IDA1146
Abstract: No abstract text available
Text: 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDSk,n, = 0. 2 0 typ. Vos = 4 V, ID= 100 mA • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK GO 1142 1. Source 2. Gate 3. Drain ADE-208-537
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2SK2802
ADE-208-537
IDA1146
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T099-METAL
Abstract: 005ST S0812 LF353 APPLICATION NOTES 353B DDE21725 LF353 LF353 APPLICATION u192 CS08
Text: 7^5^537 OQBg^S 5 LF153/A/B LF253/A/B LF353/A/B SGS-THOMSON !Q=D 3 0E S 6 S-THOMSON D J-FET INPUT DUAL OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT
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DDE21725
LF153/A/B
LF253/A/B
LF353/A/B
LF353
LCC20
Gain-of-10
e88lf353-20
e86lf353-21
T099-METAL
005ST
S0812
LF353 APPLICATION NOTES
353B
DDE21725
LF353 APPLICATION
u192
CS08
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Untitled
Abstract: No abstract text available
Text: 7^5^537 00234^1 S • T ^ - I S S G S -T H O M S O N T L 0 8 2 E L H O T M iO O S S G S-TH0MS0N T L 0 8 2 A - T L 0 8 2 B 30E » J-FET INPUT DUAL OP-AMPs ■ LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT
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TL082,
TL082A
TL082B
Galn-of-10
TL082-TL082A-TL082B
T-79-15
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2561 d
Abstract: 5537M 2561d
Text: Signetics 5537 Sample-and-Hold Amplifier Product Specification Military Linear Products DESCRIPTION Tha 5 537 m o no lith ic sa m pla-and-hold a m plifier co m bin e s the b e st fe a tu re s of ion-im planted J F E T s w ith b ip o lar devices to obta in high accuracy, fa st acquisition
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LF198,
2561 d
5537M
2561d
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PSR 368-7iR
Abstract: PSR 122.5-7 trf 740 PSa 55-7 5A7-7ir 245-7iR 4071 537
Text: PSR, PSB, NSR PSR, PSB, PSC series • • • • • • • • • • • • O u tp u t pow er 10.288 W Extremely wide input voltage range Power MOS-FET technology Large number o f options providing unlimited applications Low input to output differential voltage
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I28-7
158-71R
248-7IR
368-7IR
I26-7IR
I56-7IR
246-7IR
366-7IR
PSR 368-7iR
PSR 122.5-7
trf 740
PSa 55-7
5A7-7ir
245-7iR
4071 537
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te 2556
Abstract: ym 2121
Text: SGH5003F SONY» AIGaAs/GaAs Low Noise Microwave HEMT Preliminary Package Outline D escription U n it : mm S G H 5003F is an AIG aAs/GaAs HEMT fabricated by M O CVD M e ta l O rga n ic C h e m ical V a p o r D e p o sitio n . T h is 0 .5 m icro n gate FET fe a ture s
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5003F
SGH5003F
5003F-05
te 2556
ym 2121
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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Untitled
Abstract: No abstract text available
Text: Back to FETs POWER MOSFET N CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) Power Dissipation | T A = 25°C
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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K1637
Abstract: 2SK1637
Text: 2SK1637,2SK2422 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • L ow on-resistance • H igh speed sw itching • Low drive current • N o secondary breakdow n • Suitable for sw itching regulator and D C-D C converter
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2SK1637
2SK2422
O-220FM
2SK1637,
2SK2422
K1637
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IC LF351
Abstract: No abstract text available
Text: • TTSTSB? DOSSTbO b LF151/A/B LF251/A/B LF351/A/B SGS-THOMSON iU S G 30E S - THOMSON T> J-FET INPUT SINGLE OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT
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LF151/A/B
LF251/A/B
LF351/A/B
LF151/A/B
LF251/A/B
IC LF351
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Untitled
Abstract: No abstract text available
Text: Back to FETs NSFY140 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R d s o n • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage
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NSFY140
Drai105
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Untitled
Abstract: No abstract text available
Text: Back to FETs NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE MAXIMUM RATINGS T c = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS
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NESY140
NESYM140
T0257AA
NESYM140
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Untitled
Abstract: No abstract text available
Text: FLM7177-IHDA Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Draln-Souree Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 w Total Power Dissipation Tc = 25°C pt Storage Temperature
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FLM7177-IHDA
37dBm
------34dBm
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