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    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original     		PDF P4C187/P4C187L P4C187 P4C187L P4C187L 22-Pin 24-Pin 290x490 28-Pin 350x550

    NMC27C64Q

    Abstract: EPROM 27C32 Vpp of 27256 eprom 27C32 2732 cmos eprom NMC27C64 27c32 eprom 2716 EPROM 24 PINS otp eprom 27C16 eprom 27c64 PROGRAMMER CIRCUIT
    Text: NMC27C64 65 536-Bit 8192 x 8 CMOS EPROM General Description Features The NMC27C64 is a 64K UV erasable electrically reprogrammable and one-time programmable (OTP) CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and low power consumption are important requirements


    Original     		PDF NMC27C64 536-Bit NMC27C64 NMC27C64Q 28-pin EPROM 27C32 Vpp of 27256 eprom 27C32 2732 cmos eprom 27c32 eprom 2716 EPROM 24 PINS otp eprom 27C16 eprom 27c64 PROGRAMMER CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)


    Original     		PDF P4C187/P4C187L P4C187L) 22-Pin 24-Pin 290x490 28-Pin 350x550 P4C187/P4C187L 536-bit

    amcc volta

    Abstract: No abstract text available
    Text: S4814PBI21 Volta 48 FINAL Datasheet Revision 1.13 November 21, 2005 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth


    Original     		PDF S4814PBI21 amcc volta

    22-PIN

    Abstract: P4C187 P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)


    Original     		PDF P4C187/P4C187L P4C187L P4C187 22-Pin 24-Pin 290x490 28-P400 SRAM111 P4C187 P4C187L

    24-Pin Plastic DIP

    Abstract: smd code WZ P4C187 P4C187L
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original     		PDF P4C187/P4C187L P4C187L P4C187 P4C187L 22-Pin 24-Pin 290x490 -12JI -15PC 24-Pin Plastic DIP smd code WZ P4C187

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)


    Original     		PDF P4C187/P4C187L P4C187 P4C187L P4C187L 22-Pin 24-Pin 290x490 28-Pin 350x550

    S19225PBI22

    Abstract: S19225PBI AMCC Virtual Concatenation deskew SRAM SAMSUNG
    Text: S19225PBI22 Volta 192 Datasheet Revision 1.14 February 23, 2006 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth


    Original     		PDF S19225PBI22 S19225PBI AMCC Virtual Concatenation deskew SRAM SAMSUNG

    TMS4464

    Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
    Text: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure


    Original     		PDF SMYD002 o184-464PP-142M iS-146 TMS4464 TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500

    P4C187

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)


    Original     		PDF P4C187/P4C187L P4C187L) 22-Pin 24-Pin 290x490 28-Pin 350x550 P4C187/P4C187L 536-bit P4C187

    EN 1452-3

    Abstract: J416
    Text: SMJ4164 65.536-BIT DYNAMIC RANDOM-ACCESS MEMORY JU LY 1985 - J D PA C K A G E 6 5 ,5 3 6 x 1 Organization TO P V IEW Single 5-V Supply (± 1 0% Tolerance) w Ç AOQ A2C A1 C VddC 8 Long Refresh Period . . . 4 ms FG PA C K A G E Low Refresh Overhead Time . .


    OCR Scan     		PDF SMJ4164 536-BIT EN 1452-3 J416

    Signetics OR Mullard

    Abstract: SBB2664D SBB2664E SBB2664P TW417
    Text: DEVELOPMENT SAMPLE DATA I t r o m ri :v SBB2664P.D.E n o n . Il d o r i t o r i ? q u I¿1 r p o d u c T«plV t h; i r t he 65 536-BIT STATIC READ ONLY MEMORY T h e S B B 2 6 6 4 is a 6 5 5 3 6 h it M O S N -cha n n el s ta tic R O M orga n ised as 8 1 9 2 e ig h t b it w o rd s . T h is


    OCR Scan     		PDF SBB2664PAE 536-BIT SBB2664 24-LEAD OT-86B) M82-211 Signetics OR Mullard SBB2664D SBB2664E SBB2664P TW417

    Untitled

    Abstract: No abstract text available
    Text: DS2506 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS2506 64K bit Add-O nly Memory PIN ASSIGNMENT PR 35 • 65536 bits Electrically Program m able Read O nly Memory EPROM communicates with the econom y of one signal plus ground QE 1 NC QE 2 DATA QE 3 NC • Unique, factory-1 asered and tested 6 4 -b it registra­


    OCR Scan     		PDF DS2506

    h1010

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM64B66 BiCMOS 1 6 K X 4 Bit Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Time: 10, 12, 15, 20 ns (max.) • Low Power Dissipation S ta n d b y . 20m A (max.) O perating . 160m A (max.)


    OCR Scan     		PDF KM64B66 KM64B66P: 24-pin KM64B66J: 64B66 536-bit h1010

    EPROM 2764-25

    Abstract: 2764-25 INTEL MBM 2764-25 2764-30 eprom INTEL 2764 2764-30 EPROM 2764 2764 2764-20 2764 eprom
    Text: UV ERASABLE FU JITSU 6 5 536-BIT READ 010200020101020089010000000102010001 ONLY MEMORY MBM 2764-20 MBM 2764-25 MBM 2764-30 J a n u a ry 198* E d itio n 4 .0 MOS 8 1 9 2 x 8 B IT U V ERASABLE A N D ELE C T R IC A L LY PROGRAM M ABLE READ O N L Y M EM O RY T h e F u jits u M B M 2 7 6 4 is a high speed 6 5 ,5 3 6 -b it s ta tic N -channel M OS


    OCR Scan     		PDF 65536-BIT MOS8192x8BIT 536-bit 28-pin 32-pad 320sec LCC-32C-A01) EPROM 2764-25 2764-25 INTEL MBM 2764-25 2764-30 eprom INTEL 2764 2764-30 EPROM 2764 2764 2764-20 2764 eprom

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Untitled

    Abstract: No abstract text available
    Text: NATL S E n i C O N D NATL NMC27C49 6501126 SEMICOND, -CMEnORY> flb hSQllEfc. □□51122 □ Ô6D 5 9 1 2 2 MEMORY National Semiconductor Corporation PRELIMINARY NMC27C49 65, 536-Bit (8k x 8) UV Erasable CMOS PROM (Very High Speed Version) Pin Compatible with 64k Bipolar PROMS


    OCR Scan     		PDF NMC27C49 NMC27C49 536-Bit 536-err

    Untitled

    Abstract: No abstract text available
    Text: ÜMC U M 6264A Series 8K x 8 CMOS SRAM PRELIMINARY Features • S ingle+ 5 v o lt power supply ■ Access times: 100/120 ns m ax. 1 ■ F u lly static operation, no clock or refreshing required ■ D ire ctly T T L com patible: A ll inputs and outputs ■ Current:


    OCR Scan     		PDF 6264AM

    Untitled

    Abstract: No abstract text available
    Text: T7001 Random Number Generator Features • O n-chip or external high-frequency o scillator source option ■ O n-chip or external jitte r oscillator source option ■ Data ready and alarm o u tp u t flags readable from the data bus or independent output pins, allow ing either processor interrupt or


    OCR Scan     		PDF T7001 536-bit

    TAA 521 A

    Abstract: TAA 521
    Text: CMOS STATIC RAM 64K 8K x 8-BIT CACHE-TAG RAM IDT7174S NOT RECOMMENDED FOR NEW DESIGNS SEE IDT71B74 PAGE 6.15 FEATURES: DESCRIPTION: • H ig h -sp e e d a d d re s s to M A T C H c o m p a ris o n tim e — M ilitary: 3 5 /4 5 /5 5 n s (m ax.) — C o m m e rc ia l: 3 0 /3 5 /4 5 n s (m ax.)


    OCR Scan     		PDF T7174S IDT7174S MIL-STD-883, TAA 521 A TAA 521

    Untitled

    Abstract: No abstract text available
    Text: P A I R C H F1620 16,384 x 4-Bit Static RAM I L O A S chlum b erg er C om pany Memory and High Speed Logic Description Connection Diagrams T h e F1620 is a 65 .536-bit fu lly sta tic a s y n c h ro n o u s random access m e m ory, o rganize d as 16,384 w ord s by 4 -b its per


    OCR Scan     		PDF F1620 536-bit 22-Pin

    texas 74 series TTL logic gates

    Abstract: ic tms 1000 ccd memory 1S77 3064
    Text: TMS 3064 JL 65,536-BIT CCD MEMORY MOS LSI N O V E M B E R 1977 65,536 X 1 Organization 16 Addressable 4096-Bit Loops Performance: LATEN C Y T IM E A T 5- M H ? (M A X ) REA D OR W R ÍT E CYCLE 8 2 0 jis 2 0 0 ns 4M IN) 1 6 -F IN C E R A M I C D U A L - IN L I N E P A C K A G E


    OCR Scan     		PDF 536-BIT 4096-Bit 16-PIN 16-Pin, 300-Mi texas 74 series TTL logic gates ic tms 1000 ccd memory 1S77 3064

    din 2982

    Abstract: IDT7174S TAA 521 A IDT7174 I2114 TAA 521
    Text: CMOS STATIC RAM 64K 8K x 8-BIT CACHE-TAG RAM IDT7174S NOT RECOMMENDED FOR NEW DESIGNS SEE IDT71B74 PAGE 6.15 FEATURES: DESCRIPTION: • H ig h -sp e e d ad d re s s to M A T C H co m p a ris o n tim e — M ilitary: 3 5 /4 5 /5 5 n s (m ax.) — C o m m e rc ia l: 3 0 /3 5 /4 5 n s (m ax.)


    OCR Scan     		PDF IDT7174S IDT71B74 35/45/55ns 30/35/45ns 20/25/30ns 15/20/25ns 300mW din 2982 TAA 521 A IDT7174 I2114 TAA 521

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAMS 64K 16Kx 4-BIT IDT71981S/L IDT71982S/L Separate Data Inputs and Outputs Integrated Device Technology, Inc. FEATURES: • Optim ized for fast R IS C processors including the ID T 7 9R 300 0 • S eparate d ata inputs and outputs • ID 171981S /L: outputs track inputs during write mode


    OCR Scan     		PDF IDT71981S/L IDT71982S/L 171981S T71982S IDT1982 IL-STD-883,