amphenol 74868
Abstract: 903-284P-52S amphenol 349-50521
Text: 903-284P-52S NOTES: 1. MATERIALS AND FINISHES: BODYS - BRASS, GOLD PLATING CONTACT - BERYLLIUM COPPER, GOLD PLATING INSULATOR - PTFE 2. ELECTRICAL: A. IMPEDANCE: 50 OHM 3. MECHANICAL: A. DURABILITY: 500 CYCLES MIN. B. TEMPERATURE RANGE: -65 $C TO +165 $C 4. PACKAGING:
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903-284P-52S
MIL-STD-348
06-Jul-09
RG-316
amphenol 74868
903-284P-52S
amphenol 349-50521
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR B1 B2 B3 C DESCRIPTION DWN DATE New HF3 51S, HF3 56S, HF3 91S Printing , new HF3 53RS New HF3 91R, HF3 93R, HF3 96R REVISED PER ECO-13-009645 HD HD BK AK UKo UKo UKo UKo 06APR2010 09JUL2010
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ECO-13-009645
06APR2010
09JUL2010
12JAN2012
18JUN2013
COPYRIGHT2007
04APR2007
04APR2007
7168-m
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MMHZ5270BPT
Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)
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OT-23
MMHZ5270BPT
GP 52b DIODE
marking 24b sot-23
MMHZ5232
MMSZ5247SPT
MMPZ5232BPT
zener diode in 5229 b
MMPZ5250BPT
MMPZ5221BPT
MMPZ5235BPT
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SAW MARKING CODE SOT23
Abstract: SAW MARKING CODE SOT-23 52S marking 52s marking code AZP51SG AZP52 AZP53 AZP54VG AZP51 AZP51S
Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input
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AZP51
AZP52
AZP53
AZP54
SC-70
OT-23
SAW MARKING CODE SOT23
SAW MARKING CODE SOT-23
52S marking
52s marking code
AZP51SG
AZP52
AZP53
AZP54VG
AZP51
AZP51S
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SAW MARKING CODE SOT23
Abstract: H8 SOT-23 SOT23 marking D1G SAW MARKING CODE SOT-23 52s marking code AZP51SG marking Z6 AZP51 52S marking microtek
Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input
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AZP51
AZP52
AZP53
AZP54
SC-70
OT-23
SAW MARKING CODE SOT23
H8 SOT-23
SOT23 marking D1G
SAW MARKING CODE SOT-23
52s marking code
AZP51SG
marking Z6
AZP51
52S marking
microtek
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pt 4515
Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7
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MESFET Application
Abstract: 52s marking MARKING 52S
Text: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2
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3SK239A--------------GaAs
3SK239A
MESFET Application
52s marking
MARKING 52S
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52s marking code
Abstract: 52s marking Silicon N Channel MOSFET Tetrode
Text: Silicon N Channel MOSFET Tetrode BF 995 F o r F M and V H F T V input and m ixer sta g e s Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 995 MB Q 62702-F872 Q 62702-F936 S O T 143 Maximum ratings Parameter
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62702-F872
62702-F936
I-150
52s marking code
52s marking
Silicon N Channel MOSFET Tetrode
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BSP225
Abstract: No abstract text available
Text: Philips Com ponents Data sheet status Product specification date of issue November 1990 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • LOW BSP225 RDS on SYMBOL • Direct interface to C-MOS, TTL, etc. • High-speed switching
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BSP225
OT223
bb53T31
003bl00
BSP225.
OT223.
BSP225
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3SK177
Abstract: U7210 transistor d 2389 52S marking
Text: MES FIELD EFFECT TRANSISTOR 3SK177 RF A M P. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS • Suitable fo r use as R F a m p lifie r in U H F T V tuner. in millimeters • L o w C ,; : 0 .0 2 pF TYP.
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3SK177
3SK177
U7210
transistor d 2389
52S marking
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PMST3904
Abstract: No abstract text available
Text: • Philips Semiconductors APX bb53^3]. 0D25e132 lib Product specification AMER PHILIPS/DISCRETE b?E D PMST3904 NPN switching transistor FEATURES PIN CONFIGURATION • S-mini package • Short switching time. DESCRIPTION NPN transistor in a plastic SOT323
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0D25e
PMST3904
OT323
MAM062
PMST3904
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Untitled
Abstract: No abstract text available
Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA 7 d B m PidB T Y P IC A L A T 1.9 GHz LO W V O LT A G E : 3 Volts W ID E BAN D W ID T H : 2.9 GHz at -3 dB UPC2762T HIGH G AIN : 20 dB at 1.9 GHz (UPC2763T)
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UPC2762T
UPC2763T
UPC2762T)
UPC2763T)
2762T
2763T
UPC2762T-E3
UPC2763T-E3
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52s marking code
Abstract: 52S marking marking 52s
Text: 3.5 V, 6.5 V RATED VOLTAGE SERIES 3.5 V, 6.5 V RATED VOLTAGE SERIES FSH TYPE, FYD TYPE These 3.5 V and, 6.5 V rated voltage are suitable for use in portable or battery-driven equipment. These capacitors are especially ideal as backup devices for cameras, remote controllers, headphone and
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0J233Z
FYD0J273Z
52s marking code
52S marking
marking 52s
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD431008L 1M-BIT CM OS FAST STATIC RAM 128K-WORD BY 8-BIT D escription The,uPD431008L is a high speed, low power, 1, 048, 576 bits 131,072 w ords by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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PD431008L
128K-WORD
uPD431008L
32-pin
PD431008LLE-A17
431008LLE-A20
b427525
oo8t8885
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT juPD42S16805L, 4216805L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /¿PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful fo r the read operation.
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juPD42S16805L
4216805L
PD42S16805L,
4216805L
28-pin
/iPD42S16805L-A60,
4216805L-A60
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D485505
Abstract: PD485505G-25
Text: DATA SHEET M O S INTEGRATED CIRCUIT /¿P D 4 8 5 5 0 5 LINE BUFFER 5K-WORD BY 8-BIT Description The fiPD485505 is a 5 048 words by 8 bits high speed FIFO First In First Out line buffer. Its CMOS static circuitry provides high speed access and low power consumption.
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uPD485505
PD485505
iPD485505
016t3
480t8
427SH5
D485505.
/iPD485505G:
24-pin
D485505
PD485505G-25
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TRW J500
Abstract: k45752 52S marking
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and
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uPD42S4260L
uPD424260L
16-BIT,
fiPD42S4260L,
424260L
PD42S4260L
44-pin
40-pin
/jPD42S4260L-A70,
424260L-A70
TRW J500
k45752
52S marking
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clarostat POTENTIOMETER
Abstract: clarostat RV4 potentiometers LA 2786 sj 2907 J-D1N clarostat cm POTENTIOMETER rheostat 25 watt 1000 ohm JAIN200P 201 200 OHM Variable Resistors Potentiometer Logarithmic Potentiometer B 203
Text: Type J Hot-Molded Panel Potentiometers F eatures _ B e n e fits - • 2.25 Watts @ 70 C . ■ 50 Ohms to 5 Megohms . ■ Multiple Sections/Concenti» Shafts . . ■ UL Approved Switches . . .
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nec 424100
Abstract: upd424100 424100 424100-L upd424100-80 upd424100-80l 408L4
Text: NEC MOS INTEGRATED CIRCUII /¿ P D 4 2 4 1 0 0 , 4 2 4 1 0 0 -1 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The fiPD 424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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424100-L
26-pin
20-pin
uPD424100-60
uPD424100-70
uPD424100-80
uPD424100-10
uPD424100-60L
uPD424100-70L
nec 424100
upd424100
424100
upd424100-80l
408L4
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uPD4265160
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD4264160
uPD4265160
16-BIT,
/iPD4264160
50-pin
/iPD4264160-A50
PD4265160-A50
/xPD4264160-A60
/jPD4265160-A60
juPD4264160-A70
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / jtfPD42S4400L, 424400L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e /iP D 4 2 S 4 4 0 0 L , 4 2 4 4 0 0 L a re 1 ,0 4 8 ,5 7 6 w o r d s b y 4 b its d y n a m ic C M O S R A M s .
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jtfPD42S4400L,
424400L
4400L
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L; 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 w o rd s by 4 bits dyn am ic CMOS RAMs.
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PD42S16400L;
4216400L,
42S17400L,
4217400L
16M-BIT
/iPD42S16400L,
4217400L
jiPD42S16400L,
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4218160-60
Abstract: NEC 4218160 TI42 upd4218160 NEC A2C MARKING LE50 PD4218160 IR35-207 4218160
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160,4218160 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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uPD42S18160
uPD4218160
16M-BIT
16-BIT,
tPD42S18160,
PD42S18160
50-pin
42-pin
MPD42S18160-60,
VP15-207-2
4218160-60
NEC 4218160
TI42
NEC A2C
MARKING LE50
PD4218160
IR35-207
4218160
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424260-60
Abstract: 4275a5
Text: DATA SHEET \ I F f~ / MOS INTEGRATED CIRCUIT / uPD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode
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uPD42S4260-60
16-BIT,
iiPD42S4260-60,
/iPD42S4260-60
44-pin
40-pin
b427S25
424260-60
4275a5
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