SVC371
Abstract: No abstract text available
Text: Ordering number :EN5135A SVC371 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent large-input characteristics because of dualvaractor composite type.
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EN5135A
SVC371
SVC371
SVC371]
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SVC371
Abstract: AM receiver 513-51
Text: Ordering number :EN5135A SVC371 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent large-input characteristics because of dualvaractor composite type.
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EN5135A
SVC371
SVC371
SVC371]
AM receiver
513-51
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1SS350
Abstract: UHF DETECTOR
Text: Ordering number :EN3156A 1SS350 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Small interterminal capacitance C=0.69pF typ . · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim.
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EN3156A
1SS350
1SS350applied
1SS350]
1SS350
UHF DETECTOR
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1SS350
Abstract: No abstract text available
Text: Ordering number :EN3156A 1SS350 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Small interterminal capacitance C=0.69pF typ . · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim.
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EN3156A
1SS350
1SS350applied
1SS350]
1SS350
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DBF40
Abstract: DBF40C DBF40G
Text: Ordering number:EN2797A DBF40 Silicon Diffused Junction Type 4.0A Single-Phase Bridge Rectifier Features Package Dimensions • Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=4.0A.
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EN2797A
DBF40
DBF40]
DBF40C
DBF40G
DBF40
DBF40C
DBF40G
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DBF40
Abstract: DBF40C DBF40G
Text: Ordering number:EN2797A DBF40 Silicon Diffused Junction Type 4.0A Single-Phase Bridge Rectifier Features Package Dimensions • Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=4.0A.
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EN2797A
DBF40
DBF40]
DBF40C
DBF40G
DBF40
DBF40C
DBF40G
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LB1233
Abstract: LB1234 LB1231 LB1232 4147TS
Text: 注文コード No.N 1 1 8 8 F 半導体ニューズNo.N1188Eをさしかえてください。 LB1231シリーズ モノリシックデジタル集積回路 高耐圧大電流ダーリントン トランジスタアレー 概要 このICの回路構成はNPNトランジスタによる7回路のダーリントントランジスタアレーで、ハンマ
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N1188E
LB1231
VCEO50V)
500mA)
LB1232
LB1233
LB1234
LB1232/33/34
LB1233
LB1234
LB1231
LB1232
4147TS
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marking PV
Abstract: 1SV294
Text: Ordering number :EN5136 1SV294 Silicon Epitaxial PIN Diode Variabe Resistance Attenuator Use Features Package Dimensions • Small-sized package facilitates high-density mounting and permits 1SV294-applied equipment to be made smaller. · Small interterminal capacitance C=0.23pF typ .
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EN5136
1SV294
1SV294-applied
1SV294]
marking PV
1SV294
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2797B DBF40G 4.0A Single-Phase Bridge Rectifier http://onsemi.com Features • • • • Glass passivation for high reliability Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=4.0A Specifications Absolute Maximum Ratings at Ta=25°C
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EN2797B
DBF40G
A2797-2/2
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LB1294
Abstract: D2640 LB1249
Text: 注文コード No.N 1 1 6 3 D 半導体ニューズ No.1163C をさしかえてください。 モノリシックデジタル集積回路 LB1294 6回路ドライバアレー 概要 LB1249 は6 回路ドライバアレーであり、蛍光表示管用ドライバとして最適である。
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1163C
LB1294
LB1249
-60mA
IOUT-100A
/52595GI/4067YO
/D2640YO/6072YO
-30m61)
DIP16
LB1294
D2640
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marking 802
Abstract: DCB015 FC802
Text: Ordering number :EN3108B FC802 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features Package Dimensions • Composite type with 4 diodes cintained in the CP package currently in use, resulting in the greatly improved circuit board using efficiency.
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EN3108B
FC802
FC802
DCB015,
FC802]
marking 802
DCB015
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2797A DBF40 Silicon Diffused Junction Type 4.0A Single-Phase Bridge Rectifier Package Dimensions Features • Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=4.0A.
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EN2797A
DBF40
DBF40]
DBF40C
DBF40G
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1SS350
Abstract: marking BH
Text: Ordering number :EN3156A 1SS350 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Small interterminal capacitance C=0.69pF typ . · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim.
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EN3156A
1SS350
1SS350applied
1SS350]
1SS350
marking BH
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DBF40
Abstract: DBF40C DBF40G
Text: Ordering number:EN2797A DBF40 Silicon Diffused Junction Type 4.0A Single-Phase Bridge Rectifier Features Package Dimensions • Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=4.0A.
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EN2797A
DBF40
DBF40]
DBF40C
DBF40G
DBF40
DBF40C
DBF40G
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6187A
Abstract: svc203cp 9952 varactor diode
Text: Ordering number : EN2195F Diffused Junction Type Silicon Diode SVC203CP Varactor Diode for FM Low-Voltage Electronic Tuning Use Features • Dual type with a good linearity of C-V characteristic. Excels in large input characteristics. • Small-sized package CP usable in ultrasmall-sized sets (surface mount type).
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EN2195F
SVC203CP
6187A
svc203cp
9952
varactor diode
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SVC371
Abstract: No abstract text available
Text: SVC371 Ordering number : ENN5135B SVC371 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features • • • • • • Excellent large-input characteristics because of dual-varactor composite type.
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SVC371
ENN5135B
SVC371
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LSS350
Abstract: No abstract text available
Text: Ordering num ber: E N 3156A 7/ 1SS350 Silicon Epitaxial Schottky Barrier Diode SAmro i UHF Detector, Mixer Applications F e a tu re s •Small interterm inal capacitance C = 0.69pF typ . ■Low forward voltage (Vp = 0.23V max). • Very small-sized package permitting the lSS350-applied sets to be made small and slim.
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1SS350
lSS350-applied
52595GI
D149MO
LSS350
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN 3108B _ NO.3108B FC802 Silicon Epitaxial P la n ar Type Com posite D iode for H igh-Speed S w itch in g A pp lications Features • Composite type with 4 diodes contained in the CP package currently in use, resulting in the greatly
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3108B
FC802
FC802
DCB015,
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Untitled
Abstract: No abstract text available
Text: Ordering num ber:EN5136 1SV294 No.5136 Silicon E p itax ial P IN Diode Variabe Resistance Attenuator Use F eatu res • Small-sized package facilitates high-density m o unting and p erm its lSV 294-applied eq u ip m e n t to be m ade sm aller. • Small in te rte rm in a l capacitance C = 0.23pF typ .
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EN5136
1SV294
294-applied
52595GI
TA-0346
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6187A
Abstract: SVC203CP
Text: Ordering number: EN 2195E SVC203CP N0.2195E Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic T uning Use F ea tu r es • Dual type with a good linearity of C-V characteristic. Excels in large input characteristic. •Sm all-sized package CP usable in very sm all-sized sets (surface mount type)
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2195E
SVC203CP
52595GI
1200MO/O268MO/6187AT
j-23-56
6187A
SVC203CP
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DBF40
Abstract: DBF40C DBF40G
Text: Ordering number:EN 2797A DBF40 Silicon Diffused Junction Type 4.0A Single-Phase Bridge Rectifier F e a tu r e s • Glass passivation for high reliability • Plastic molded structure •Peak reverse voltage : V rm = 200, 600V • Average rectified c u r r e n t : Io = 4.0A
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EN2797A
DBF40
DBF40C
DBF40G
52595GI
N098TA
DBF40
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5135a
Abstract: No abstract text available
Text: Ordering number: EN 5135A SVC371 No.5135A f l _ Diffused Junction Type Silicon Diode i Composite Varactor Diode for AM Receiver LowVoltage Electronic Tuning Applications Features • Excellent large-input characteristics because of dual-varactor composite type.
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SVC371
SVC371
5135a
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