Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-1123 CASE 524AA-01 ISSUE B DATE 18 APR 2008 SCALE 8:1 -X- D b1 -Y1 E 3 2 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
|
Original
|
OT-1123
524AA-01
524AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2211,
MMUN2211L,
MUN5211,
DTC114EE,
DTC114EM3,
NSBC114EF3
DTC114E/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3 Digital Transistors BRT R1 = 47 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2237,
MMUN2237L,
MUN5237,
DTC144WE,
DTC144WM3,
NSBC144WF3
DTC144W/D
|
PDF
|
pin diagram of ic 347
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. NPN General Purpose Transistor LNST3904F3T5G The LNST3904F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in
|
Original
|
LNST3904F3T5G
LNST3904F3T5G
OT-23/SOT-323/SOT-563/SOT-963
OT-1123
pin diagram of ic 347
|
PDF
|
SMMUN2211LT3G
Abstract: DTC114EM3 SOT323 A8A DTC114EET1G
Text: MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2211,
MMUN2211L,
MUN5211,
DTC114EE,
DTC114EM3,
NSBC114EF3
DTC114E/D
SMMUN2211LT3G
DTC114EM3
SOT323 A8A
DTC114EET1G
|
PDF
|
MUN5130
Abstract: No abstract text available
Text: MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors BRT R1 = 1 kW, R2 = 1 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2130,
MMUN2130L,
MUN5130,
DTA113EE,
DTA113EM3,
NSBA113EF3
DTA113E/D
MUN5130
|
PDF
|
marking 8F
Abstract: marking A8F NSBC143TF3 8F sot23
Text: MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2216,
MMUN2216L,
MUN5216,
DTC143TE,
DTC143TM3,
NSBC143TF3
DTC143T/D
marking 8F
marking A8F
8F sot23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2111,
MMUN2111L,
MUN5111,
DTA114EE,
DTA114EM3,
NSBA114EF3
DTA114E/D
|
PDF
|
SOT-1123
Abstract: No abstract text available
Text: ESD11L5.0DT5G Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance The ESD11L5.0DT5G is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping
|
Original
|
ESD11L5
OT-1123
SOT-1123
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor
|
Original
|
NSBC114EF3T5G
OT-1123
NSBC114EF3/D
|
PDF
|
NSBC114YF3T5G
Abstract: No abstract text available
Text: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor
|
Original
|
NSBC114EF3T5G
OT-1123
NSBC114EF3/D
NSBC114YF3T5G
|
PDF
|
NST848BF3T5G
Abstract: No abstract text available
Text: NST848BF3T5G NPN General Purpose Transistor The NST848BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface
|
Original
|
NST848BF3T5G
NST848BF3T5G
OT-23/SOT-323/SOT-563
OT-1123
NST848BF3/D
|
PDF
|
NSD914F3T5G
Abstract: SOT-1123 diode 1123 sot1123
Text: NSD914F3T5G High-Speed Switching Diode The NSD914F3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for high speed switching applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where
|
Original
|
NSD914F3T5G
NSD914F3T5G
OT-23
OT-1123
NSD914F3/D
SOT-1123
diode 1123
sot1123
|
PDF
|
NST846BF3T5G
Abstract: No abstract text available
Text: NST846BF3T5G NPN General Purpose Transistor The NST846BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface
|
Original
|
NST846BF3T5G
NST846BF3T5G
OT-23/SOT-323/SOT-563
OT-1123
NST846BF3/D
|
PDF
|
|
|
NST857BF3T5G
Abstract: SOT-963
Text: NST857BF3T5G PNP General Purpose Transistor The NST857BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for
|
Original
|
NST857BF3T5G
NST857BF3T5G
OT-23/SOT-323/SOT-563/SOT-963
OT-1123
NST857BF3/D
SOT-963
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NSBA115TF3 Digital Transistors BRT R1 = 100 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
|
Original
|
NSBA115TF3
DTA115T/D
|
PDF
|
NST3904F3T5G
Abstract: No abstract text available
Text: NST3904F3T5G NPN General Purpose Transistor The NST3904F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for
|
Original
|
NST3904F3T5G
NST3904F3T5G
OT-23/SOT-323/SOT-563/SOT-963
OT-1123
NST3904F3/D
|
PDF
|
dtc143zm3t5g
Abstract: No abstract text available
Text: MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2233,
MMUN2233L,
MUN5233,
DTC143ZE,
DTC143ZM3,
NSBC143ZF3
DTC143Z/D
dtc143zm3t5g
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors BRT R1 = 22 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2212,
MMUN2212L,
MUN5212,
DTC124EE,
DTC124EM3,
NSBC124EF3
DTC124E/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUN2241, MMUN2241L, NSBC115TF3 Digital Transistors BRT R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
|
Original
|
MUN2241,
MMUN2241L,
NSBC115TF3
DTC115T/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors BRT R1 = 22 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2212,
MMUN2212L,
MUN5212,
DTC124EE,
DTC124EM3,
NSBC124EF3
DTC124E/D
|
PDF
|
transistor 6D sot23
Abstract: marking 6D
Text: MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3 Digital Transistors BRT R1 = 10 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
|
Original
|
MUN2114,
MMUN2114L,
MUN5114,
DTA114YE,
DTA114YM3,
NSBA114YF3
DTA114Y/D
transistor 6D sot23
marking 6D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 47 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
|
Original
|
MUN5235,
DTC123JE,
DTC123JM3,
NSBC123JF3
DTC123J/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NSBA114EF3T5G Series Preferred Devices Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor
|
Original
|
NSBA114EF3T5G
NSBA114EF3/D
|
PDF
|
