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    524,288 9BIT Search Results

    524,288 9BIT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144x9 524,288 x 9 FEATURES: • Choose among the following memory organizations: IDT72V2101 262,144x9 IDT72V2111 524,288 x 9 • Pin-compatible with the IDT72V261/72V271 and the IDT72V281/72V291 SuperSync FIFOs


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    144x9 IDT72V2101 IDT72V2111 IDT72V2111 IDT72V261/72V271 IDT72V281/72V291 72V2101 72V2111 PDF

    IDT72V2101

    Abstract: IDT72V2111 IDT72V281 72V2101 72V2111 72V291
    Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: ♦ Choose among the following memory organizations: IDT72V2101 262,144 x 9 IDT72V2111 524,288 x 9 ♦ Pin-compatible with the IDT72V261/72V271 and the IDT72V281/ 72V291 SuperSync FIFOs


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    IDT72V2101 IDT72V2111 IDT72V261/72V271 IDT72V281/ 72V291 72V2101 72V2111 com/docs/PSC4036 IDT72V2101 IDT72V2111 IDT72V281 72V2101 72V2111 PDF

    hm514900

    Abstract: No abstract text available
    Text: HM514900 S eries- Preliminary 524,288-Word x 9-Bit Dynamic Random Access Memory • DESCRIPTION HM514900JP Series The Hitachi HM514900 are CMOS dynamic RAM organized as 524,288-word x 9-bit. HM514900 have realized higher density, higher performance and various func­


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    HM514900 eries----------------------524 288-Word 28-pin PDF

    72V2101

    Abstract: 72V2111 72V291 IDT72V2101 IDT72V2111 IDT72V281
    Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: ♦ Choose among the following memory organizations: IDT72V2101  262,144 x 9 IDT72V2111  524,288 x 9 ♦ Pin-compatible with the IDT72V261/72V271 and the IDT72V281/ 72V291 SuperSync FIFOs


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    IDT72V2101 IDT72V2111 IDT72V261/72V271 IDT72V281/ 72V291 72V2101 72V2111 com/docs/PSC4036 72V2101 72V2111 IDT72V2101 IDT72V2111 IDT72V281 PDF

    72V2101

    Abstract: 72V2111 IDT72V2101 IDT72V2101L IDT72V2111 72V2111L10
    Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 PRELIMINARY IDT72V2101 IDT72V2111 Integrated Device Technology, Inc. FEATURES: • Choose among the following memory organizations: IDT72V2101 262,144 x 9 IDT72V2111 524,288 x 9 • Pin-compatible with the IDT72V261/72V271 and the


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    IDT72V2101 IDT72V2111 IDT72V261/72V271 IDT72V281/72V291 PN64-1) 72V2101 72V2111 IDT72V2101 IDT72V2101L IDT72V2111 72V2111L10 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM514900A/AL, HM51S4900A/AL Series Preliminary 524,288-Word x 9-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514900A are CMOS dynamic RAM orga­ nized as 524,288-word x 9-bit. HM514900A have realized higher density, higher performance and various functions by


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    HM514900A/AL, HM51S4900A/AL 288-Word HM514900A 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: W? SEC NEC Electronics Inc. pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM Preliminary Information Description The /JPD424900A/L and ^PD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits and designed to operate from a single power supply.


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    pPD424900A/L, 42S4900A/L /JPD424900A/L PD42S4900A/L 24900A 424900L 42S4900A 42S4900L PDF

    MSM514900CSL

    Abstract: No abstract text available
    Text: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate


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    E2G0025-17-42 MSM514900C/CSL 288-Word MSM514900C/CSL 28-pin 28pin MSM514900CSL PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT72V2101 IDT72V2111 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2101  262,144 x 9 IDT72V2111  524,288 x 9


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    IDT72V2101 IDT72V2111 IDT72V261/72V271 IDT72V281/ 72V291 drw24 com/docs/PSC4036 PDF

    HM514900AJ-7

    Abstract: HM514900A HM514900AT HM514900ATT-7 Hitachi DSA00514 HM514900AJ7
    Text: HM514900A/AL Series 524,288-word x 9-bit Dynamic Random Access Memory The Hitachi HM514900A are CMOS dynamic RAM organized as 524,288-word × 9-bit. HM514900A have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new


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    HM514900A/AL 288-word HM514900A 400-mil 28-pin 400-mil HM514900AJ-7 HM514900AT HM514900ATT-7 Hitachi DSA00514 HM514900AJ7 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT72V2101 IDT72V2111 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2101  262,144 x 9 IDT72V2111  524,288 x 9


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    IDT72V2101 IDT72V2111 IDT72V2101 IDT72V261/72V271 IDT72V281/ 72V291 PN64-1) drw24 com/docs/PSC4036 PDF

    SA9C

    Abstract: No abstract text available
    Text: i E C ELECTRONICS INC blE D LUh V NEC Electronics Inc. • b427525 0D337b3 2b4 BINECE fiPD424900A/L, 42S4900A/L 524,288 x 9-Blt Dynamic CMOS RAM T - Description The ¿/PD424900A/L and ^PD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits


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    uPD424900A/L uPD42S4900A/L /PD424900A/L PD42S4900A/L 24900A 424900L 42S4900A 42S4900L 28-pin SA9C PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514900 /SL_ 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900/SL is a 524,288-word x 9-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514900/SL achieves high integration, high-speed operation, and low-power


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    MSM514900 288-Word MSM514900/SL 28-pin MSM5149005L PDF

    MSM514900C

    Abstract: MSM514900CSL TSOPII28-P-400-1
    Text: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate


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    E2G0025-17-42 MSM514900C/CSL 288-Word MSM514900C/CSL 28-pin 28pin MSM514900C MSM514900CSL TSOPII28-P-400-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor E2G 0025-17-42 MSM514900C/CSL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word x 9-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514900C/CSL achieves high integration, high-speed operation, and


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    MSM514900C/CSL 288-Word MSM514900C/CSL 28-pin 28pin MSM514900CSL PDF

    BB240-1

    Abstract: 72T18105 72T18115 72T18125 IDT72T18105 IDT72T18115 IDT72T18125
    Text: 2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 524,288 x 18/1,048,576 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations:


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    18-BIT/9-BIT IDT72T18105 IDT72T18115 IDT72T18125 72T18105 72T18115 72T18125 drw41 com/docs/PSC40_ BB240-1 72T18105 72T18115 72T18125 IDT72T18105 IDT72T18115 IDT72T18125 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514900/SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 514900/SL is a new generation dynamic RAM organized as 524,288 words by 9 bits. The technology used to fabricate the MSM514900/SL is OKI's CMOS silicon gate process


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    MSM514900/SL 288-Word 514900/SL MSM514900/SL cycles/16ms, 1024cycles/128ms L72MEMD Q015flbb PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 524,288 x 18/1,048,576 x 9 FEATURES: • • • • • • • • • • • • • • Choose among the following memory organizations:


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    18-BIT/9-BIT IDT72T18105 IDT72T18115 IDT72T18125 IDT72T18105 IDT72T18115 BB240-1) drw41 com/docs/PSC40_ PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor MSM514900C/CSL E2G0025-17-42 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514900C/CSL achieves high integration, high-speed operation, and


    Original
    MSM514900C/CSL 288-Word E2G0025-17-42 MSM514900C/CSL 28-pin 28pin PDF

    ACP14

    Abstract: No abstract text available
    Text: HM514900A/AL, HM51S4900A/AL Series Preliminary 524,288-Word x 9-Bit Dynamic Random A c ce s s Memory • DESCRIPTION ■ FEATU R ES The Hitachi HM514900A are C M O S dynamic RAM orga­ nized as 524,288-word x 9-bit. HM514900A have realized higher density, higher performance and various functions by


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    HM514900A/AL, HM51S4900A/AL 288-Word HM514900A 28-pin ACP14 PDF

    SL8080

    Abstract: No abstract text available
    Text: O K I Sem iconductor MSM5 14 9 0 0 /SL_ 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900/SL is a 524,288-word x 9-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514900/SL achieves high integration, high-speed operation, and low-power


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    MSM514900/SL_ 288-Word MSM514900/SL 28-pin MSM514900SL SL8080 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77V940GB - 8/ 10/12 524,288-Word by 9-bit High Speed CMOS Synchronous Static RAM P fQ U m jn Q fy Description The C XK77V940GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288-w ords by 9-bits. This synchronous SRAM integrates input registers, high


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    CXK77V940GB 288-Word XK77V940GB 288-w i2303 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FU JITSU MOS Memories • M B 8 5 2 1 1 -1 2 , M B 8 5 2 1 1 -1 5 524,288 X 4-Bit Dynamic Random Access Memory SIP Module The Fujitsu MB85211 is a fully decoded, 524,288 word x 4-bit NMOS dynamic random access memory module consisting of eight


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    MB85211 MB81256 18-pad 24-pin MB81256x8) MB85211-12) MB85211-15) MB85211-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 262,144 x 9 524,288 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2101 ⎯ 262,144 x 9 IDT72V2111 ⎯ 524,288 x 9 Pin-compatible with the IDT72V261/72V271 and the IDT72V281/


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    IDT72V2101 IDT72V2111 IDT72V261/72V271 IDT72V281/ 72V291 72V2101 72V2111 drw24 PDF