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    Untitled

    Abstract: No abstract text available
    Text: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms


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    51C258L

    Abstract: 51C258L-12 51C258L-15 51C258L-20 28012* intel
    Text: in t e i 51C258Lt LOW PO W ER 6 4 K x 4 C H M O S DYN A M IC RA M 51C258L-12 51C258L-15 51C258L-20 120 0.1 150 200 0.1 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) Low O perating Current — 50 m A (max.) Low Power Data Retention - sta n d b y current, C H M O S — 100 /iA


    OCR Scan     		PDF 51C258Lt 64Kx4 51C258L-12 51C258L-15 51C258L-20 51C258L 51C258L-20 28012* intel

    Untitled

    Abstract: No abstract text available
    Text: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA


    OCR Scan     		PDF 51C258LT 64Kx4 51C258L-12 51C258L-15 51C258L-20 51C258L 51C258L