JANSR2N7432U
Abstract: IRHNA3160 IRHNA4160 IRHNA7160 JANSF2N7432U JANSG2N7432U SMD 51A
Text: PD - 91396E IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04Ω 0.04Ω ID QPL Part Number 51A 51A
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91396E
IRHNA7160
JANSR2N7432U
MIL-PRF-19500/664
JANSF2N7432U
IRHNA3160
IRHNA4160
JANSG2N7432U
JANSR2N7432U
IRHNA3160
IRHNA4160
IRHNA7160
JANSF2N7432U
JANSG2N7432U
SMD 51A
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Untitled
Abstract: No abstract text available
Text: PD - 91396E IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04Ω 0.04Ω ID QPL Part Number 51A 51A
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91396E
IRHNA7160
JANSR2N7432U
MIL-PRF-19500/664
JANSF2N7432U
IRHNA3160
IRHNA4160
JANSG2N7432U
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Untitled
Abstract: No abstract text available
Text: PD-91396F IRHNA7160 JANSR2N7432U 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) 0.04Ω 0.04Ω ID QPL Part Number 51A 51A JANSR2N7432U
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PD-91396F
IRHNA7160
JANSR2N7432U
MIL-PRF-19500/664
JANSF2N7432U
IRHNA3160
IRHNA4160
JANSG2N7432U
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Untitled
Abstract: No abstract text available
Text: RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCJ510N25
SC-83)
R1102A
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Untitled
Abstract: No abstract text available
Text: RCX511N25 RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCX511N25
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: RCX511N25 Datasheet Nch 250V 51A Power MOSFET lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
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RCX511N25
O-220FM
R1120A
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RCX511N25
Abstract: No abstract text available
Text: RCX511N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.
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RCX511N25
O-220FM
R1120A
RCX511N25
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2N7002 DICT Vishay-Liteon
Abstract: ac power adapter for notebook schematic MURATA grm21BR7 C1608X7R1 H105K C3216X7R1 2N7002DIC BQ24751AR bq24751 HPA207
Text: User's Guide SLUU283D – May 2007 – Revised March 2010 bq24750/50A/51/51A/51B/52/53 EVM HPA207 For Multi Cell Synchronous Notebook Charger and System Power Selector 1 2 3 4 Contents Introduction .
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SLUU283D
bq24750/50A/51/51A/51B/52/53
HPA207)
2N7002 DICT Vishay-Liteon
ac power adapter for notebook schematic
MURATA grm21BR7
C1608X7R1
H105K
C3216X7R1
2N7002DIC
BQ24751AR
bq24751
HPA207
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APT50MC120JCU2
Abstract: No abstract text available
Text: APT50MC120JCU2 ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 40mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT50MC120JCU2
OT-227)
APT50MC120JCU2
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Untitled
Abstract: No abstract text available
Text: AP9560GS-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D -40V RDS ON Simple Drive Requirement Fast Switching Characteristic 12.5m ID G -51A RoHS Compliant & Halogen-Free S Description
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AP9560GS-HF
O-263
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP9560GP-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -40V 12.5m -51A RoHS Compliant & Halogen-Free S Description
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AP9560GP-HF
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP0904GJB-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D BVDSS 40V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 10m 51A S Description
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AP0904GJB-HF
O-251S
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP0904GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D 40V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 10m 51A S Description
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AP0904GH/J-HF
O-252
AP0904GJ)
100us
100ms
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Untitled
Abstract: No abstract text available
Text: APTM50DHM65TG Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives G1 S1
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APTM50DHM65TG
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Untitled
Abstract: No abstract text available
Text: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VDSS = 500V RDSon = 65mΩ Ω max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • • • • •
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APTM50DHM65T
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
O-220
FDPF51N25
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UJ-845
Abstract: MOSFET Module transistor d 1556 APTM50DHM65T
Text: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives G1 S1 OUT1 OUT2
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APTM50DHM65T
UJ-845
MOSFET Module
transistor d 1556
APTM50DHM65T
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
FDPF51N25
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51a marking
Abstract: FDP51N25 FDPF51N25
Text: UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V
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FDP51N25
FDPF51N25
O-220
FDPF51N25
51a marking
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APT0406
Abstract: APT0501 APT0502
Text: APTM50DHM65T3G VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Asymmetrical - Bridge MOSFET Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR3 18 22 7 Features
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APTM50DHM65T3G
APT0406
APT0501
APT0502
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45J op amp
Abstract: op closed-loop 80MHZ Model 48J AC1034
Text: ANALOG ► DEVICES Fast Settling, Wideband, 100mA Output, FET Amplifiers FEATURES Fast Settling: 200ns max, 0.05% 50J/K 100ns max, 0.1% (50J/K ) 100mA Output: dc to 8M H z (50J/K ) dc to 6M H z (51A /B ) All Hermetically Sealed Semiconductors (51A /B )
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100mA
200ns
50J/K)
100ns
100MHz
45J op amp
op closed-loop 80MHZ
Model 48J
AC1034
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MPSW51
Abstract: MPSW51A 500IC
Text: MP$W51,A* M A X IM U M R A T IN G S Rating Symbol Value Unit Collector-Emitter Voltage MPSW51 M PSW 51A VCEO -3 0 -4 0 Vdc Collector-Base Voltage MPSW51 M PSW 51A VCBO -4 0 -5 0 Vdc Emitter-Base Voltage Ve b o -5.0 Vdc Collector Current — Continuous >C -1 0 0 0
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MPSW51
MPSW51A
MPSW51,
500IC
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MPSW
Abstract: No abstract text available
Text: MPSW51,A* M A X IM U M RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e M PSW 51 v CEO M P S W 51A C o lle c to r-B a s e V o lta g e MPSW 51 VC B O M P S W 51A T/^ = 2 5 °C T o ta l D e v ic e D is s ip a tio n «' T q = -3 0 Vdc 25°C - 40
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MPSW51
O-226AE)
MPSW
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Symbol Value Unit C o lle c to r - E m itte r V o lta g e Rating M PSW 51 M PSW 51A VcEO -3 0 -4 0 Vdc C o lle c to r - B a s e V o lta g e M PSW 51 M PSW 51A VcBO -4 0 Vdc -5 0 E m it t e r - B a s e V o lta g e VebO - 5 .0 Vdc C o lle c to r C u rr e n t — C o n tin u o u s
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MPSW51,
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