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    Untitled

    Abstract: No abstract text available
    Text: NLX2G08 Dual 2-Input AND Gate The NLX2G08 is an advanced high-speed dual 2-input CMOS AND gate in ultra-small footprint. The NLX2G08 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. http://onsemi.com


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    PDF NLX2G08 NLX2G08 523AN NLX2G08/D

    Untitled

    Abstract: No abstract text available
    Text: NLX1G99 Configurable Multifunction Gate The NLX1G99 MiniGatet is an advanced high−speed CMOS multifunction gate with a 3−state output. With the output enable input OE at High, the output is disabled and is kept at high impedance. With the output enable input (OE) at Low, the device can be


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    PDF NLX1G99 NLX1G99 613AA NLX1G99/D

    NLX2G32DMUTCG

    Abstract: No abstract text available
    Text: NLX2G32 Dual 2-Input OR Gate The NLX2G32 is a high performance dual 2−input OR Gate operating from a 1.65 V to 5.5 V supply. Features • • • • • • • • • • Extremely High Speed: tPD 2.5 ns typical at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation


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    PDF NLX2G32 NC7WZ32 613AA 613AB NLX2G32/D NLX2G32DMUTCG

    Untitled

    Abstract: No abstract text available
    Text: NLX1G99 Configurable Multifunction Gate The NLX1G99 MiniGatet is an advanced high−speed CMOS multifunction gate with a 3−state output. With the output enable input OE at High, the output is disabled and is kept at high impedance. With the output enable input (OE) at Low, the device can be


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    PDF NLX1G99 613AA NLX1G99/D

    Untitled

    Abstract: No abstract text available
    Text: NLU3G14 Triple Schmitt-Trigger Inverter The NLU3G14 MiniGatet is an advanced high−speed CMOS triple Schmitt−trigger inverter in ultra−small footprint. The NLU3G14 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLU3G14 517AJ NLU3G14/D

    Untitled

    Abstract: No abstract text available
    Text: NLX2G02 Dual 2-Input NOR Gate The NLX2G02 is an advanced high-speed dual 2-input CMOS NOR gate in ultra-small footprint. The NLX2G02 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. http://onsemi.com


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    PDF NLX2G02 613AA 613AB 613AC NLX2G02/D

    Untitled

    Abstract: No abstract text available
    Text: NLU3G14 Triple Schmitt-Trigger Inverter The NLU3G14 MiniGatet is an advanced high−speed CMOS triple Schmitt−trigger inverter in ultra−small footprint. The NLU3G14 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLU3G14 NLU3G14 NLU3G14/D

    Untitled

    Abstract: No abstract text available
    Text: NLX3G14 Triple Schmitt-Trigger Inverter The NLX3G14 MiniGatet is an advanced high−speed CMOS triple Schmitt−trigger inverter in ultra−small footprint. The NLX3G14 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLX3G14 NLX3G14 613AA NLX3G14/D

    Untitled

    Abstract: No abstract text available
    Text: NLX1G99 Configurable Multifunction Gate The NLX1G99 MiniGatet is an advanced high−speed CMOS multifunction gate with a 3−state output. With the output enable input OE at High, the output is disabled and is kept at high impedance. With the output enable input (OE) at Low, the device can be


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    PDF NLX1G99 NLX1G99 613AA NLX1G99/D

    Untitled

    Abstract: No abstract text available
    Text: NLX3G17 Triple Non-Inverting Schmitt-Trigger Buffer The NLX3G17 MiniGatet is an advanced high−speed CMOS triple non−inverting Schmitt−trigger buffer in ultra−small footprint. The NLX3G17 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLX3G17 NLX3G17 NLX3G17/D

    MCP 256M nand toshiba

    Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
    Text: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package


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    PDF TY80009000AMGF TY80009000AMGF 456-bit 128-bit 149-pin P-FBGA149-1013-0 N-39/39 MCP 256M nand toshiba toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9

    NLX3G17DMUTCG

    Abstract: No abstract text available
    Text: NLX3G17 Triple Non-Inverting Schmitt-Trigger Buffer The NLX3G17 MiniGatet is an advanced high−speed CMOS triple non−inverting Schmitt−trigger buffer in ultra−small footprint. The NLX3G17 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLX3G17 613AA NLX3G17/D NLX3G17DMUTCG

    marking AHM

    Abstract: No abstract text available
    Text: NLX2G00 Dual 2-Input NAND Gate The NLX2G00 is an advanced high-speed dual 2-input CMOS NAND gate in ultra-small footprint. The NLX2G00 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. http://onsemi.com


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    PDF NLX2G00 613AA 613AB 613AC NLX2G00/D marking AHM

    Untitled

    Abstract: No abstract text available
    Text: NLX1G99 Configurable Multifunction Gate The NLX1G99 MiniGatet is an advanced high−speed CMOS multifunction gate with a 3−state output. With the output enable input OE at High, the output is disabled and is kept at high impedance. With the output enable input (OE) at Low, the device can be


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    PDF NLX1G99 NLX1G99 613AA NLX1G99/D

    TC58DVG02A1FTI0

    Abstract: DIN527 TC58DVG02A1 TC58DVG02A1FT
    Text: TC58DVG02A1FTI0 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte


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    PDF TC58DVG02A1FTI0 TC58DVG02A1 528-byte 528-byte TC58DVG02A1FTI0 DIN527 TC58DVG02A1FT

    DIN527

    Abstract: TC58DVM92A1FTI0
    Text: TC58DVM92A1FTI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M u 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register


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    PDF TC58DVM92A1FTI0 512-MBIT 528-byte 528-byte DIN527 TC58DVM92A1FTI0

    Untitled

    Abstract: No abstract text available
    Text: NLX2G00 Dual 2-Input NAND Gate The NLX2G00 is an advanced high-speed dual 2-input CMOS NAND gate in ultra-small footprint. The NLX2G00 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. http://onsemi.com


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    PDF NLX2G00 NLX2G00 613AA NLX2G00/D

    Untitled

    Abstract: No abstract text available
    Text: NLX3G16 Triple Non-Inverting Buffer The NLX3G16 MiniGatet is an advanced high−speed CMOS triple non−inverting buffer in ultra−small footprint. The NLX3G16 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLX3G16 NLX3G16 NLX3G16/D

    DIN527

    Abstract: TC58DVG02A1FT00
    Text: TC58DVG02A1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M u 8 BITS CMOS NAND E PROM DESCRIPTION The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The device has a 528-byte


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    PDF TC58DVG02A1FT00 TC58DVG02A1 528-byte 528-byte DIN527 TC58DVG02A1FT00

    Untitled

    Abstract: No abstract text available
    Text: NLU3G16 Triple Non-Inverting Buffer The NLU3G16 MiniGatet is an advanced high−speed CMOS triple non−inverting buffer in ultra−small footprint. The NLU3G16 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLU3G16 NLU3G16 613AC NLU3G16/D

    Untitled

    Abstract: No abstract text available
    Text: NLX2G02 Dual 2-Input NOR Gate The NLX2G02 is an advanced high-speed dual 2-input CMOS NOR gate in ultra-small footprint. The NLX2G02 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. http://onsemi.com


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    PDF NLX2G02 NLX2G02 613AA NLX2G02/D

    UDFN-8

    Abstract: No abstract text available
    Text: NLU3G16 Triple Non-Inverting Buffer The NLU3G16 MiniGatet is an advanced high−speed CMOS triple non−inverting buffer in ultra−small footprint. The NLU3G16 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage.


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    PDF NLU3G16 517AJ 613AA NLU3G16/D UDFN-8

    523AN

    Abstract: UDFN-8
    Text: NLX2G08 Dual 2-Input AND Gate The NLX2G08 is an advanced high-speed dual 2-input CMOS AND gate in ultra-small footprint. The NLX2G08 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. http://onsemi.com


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    PDF NLX2G08 523AN 613AA 613AB 613AC NLX2G08/D UDFN-8

    523AN

    Abstract: No abstract text available
    Text: NLX2G08 Dual 2-Input AND Gate The NLX2G08 is an advanced high-speed dual 2-input CMOS AND gate in ultra-small footprint. The NLX2G08 input structures provide protection when voltages up to 7.0 volts are applied, regardless of the supply voltage. http://onsemi.com


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    PDF NLX2G08 NLX2G08 523AN NLX2G08/D 523AN