Untitled
Abstract: No abstract text available
Text: HB56D25636 Series 262,144-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The H B56D25636B is a 256k x 3 6 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM H M 514256JP sealed in SOJ package and 4 pieces of 256k-bit DRAM (H M 51256C P) sealed in PLCC package. An outline of the H B56D25636B is
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HB56D25636
144-Word
36-Bit
B56D25636B
514256JP)
256k-bit
51256C
72-pin
HB56D25636B
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Untitled
Abstract: No abstract text available
Text: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM 514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is
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HB56D51236
288-Word
36-Bit
HB56D51236B
HM514256JP)
256k-bit
HM51256CP)
72-pin
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514256-10
Abstract: HM514256 hitachi HM514256
Text: HM514256 Series 262144-word x 4-bit CMOS Dynamic RAM T h e H itachi H M 5 1 4 2 5 6 Series is a C M O S d y n a m ic R A M o r ganized 2 6 2 1 4 4 -w o r d x 4-bit. H M 514256P Series H M 5 1 4 2 5 6 has realized higher density, higher perform ance and variou s fu n c tio n s b y e m p lo y in g
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HM514256
262144-word
514256P
514256-10
hitachi HM514256
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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514256
Abstract: HM514256 m514256 M 514256 hitachi HM514256 514256P HM514256-10
Text: Preliminary H M 514256 S e rie s 262144-word x 4-bit CMOS Dynamic Random Access Memory The Hitachi H M 5 1 4 2 5 6 Series is a C M O S dynam ic R A M or ganized 262144-w ord x 4-bit. H M 5 1 4 2 5 6 has realized higher density, higher performance and various functions by em ploying
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262144-word
262144-w
20-pin
514256P
DP-20NA)
514256ZP
514256
HM514256
m514256
M 514256
hitachi HM514256
HM514256-10
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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6264l
Abstract: 27C301G 27c301 fp 101g TI232 6116asp 50464cp ls 11m M62256FP 02S-0
Text: • PACKAGE INFORMATION • Dual-In-line Plastic U n it: m m inch Scale 1/1 • DP-16B • DP-18B 2 54 + 0 25 0 48 < 0 I (0 100 ‘ 0 0 1 0 ) (0 019 * 0 004) -X - 4 4 .- . 0 48 t 0 I ? 54 f 0 25 ~ (0 019 ± 0 004) (0 100 ± 0 010) • DP-20N • DP-18C 2 2 2 6 (0 1 7 6 )
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DP-16B
DP-18B
DP-18C
DP-20N
DP-20NA
DP-22N
300Tt
6789H
256JP
534251JP
6264l
27C301G
27c301
fp 101g
TI232
6116asp
50464cp
ls 11m
M62256FP
02S-0
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27c301
Abstract: HM6788P-25 HM6788
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.
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