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    512X16 SRAM Search Results

    512X16 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV0408DSP-7LR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1WV3216RBG-7SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0816ASD-5SI#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0408DSP-5SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1Q2A7236ABB-40IB1 Renesas Electronics Corporation 72-Mbit QDR™II SRAM　2-word Burst Visit Renesas Electronics Corporation

    512X16 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    512X16 sram

    Abstract: SRAM timing static SRAM single port
    Text: d110001 512X16, Mux 8, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 512X16 SRAM is a high-performance, synchronous single-port, 512-word by 16-bit memory designed to


    Original     		PDF d110001 512X16, 512X16 512-word 16-bit 61mm2 HS300-SS 99Q3P0 512X16 sram SRAM timing static SRAM single port

    SECDED

    Abstract: sram 16k8 EP3SE50
    Text: 4. TriMatrix Embedded Memory Blocks in Stratix III Devices SIII51004-1.1 Introduction TriMatrix embedded memory blocks provide three different sizes of embedded SRAM to efficiently address the needs of Stratix III FPGA designs. TriMatrix memory includes 640-bit memory logic array blocks


    Original     		PDF SIII51004-1 640-bit 144-Kbit M144K SECDED sram 16k8 EP3SE50

    SECDED

    Abstract: EP3SE50
    Text: 4. TriMatrix Embedded Memory Blocks in Stratix III Devices SIII51004-1.8 Introduction TriMatrix embedded memory blocks provide three different sizes of embedded SRAM to efficiently address the needs of Stratix III FPGA designs. TriMatrix memory includes 640- in ROM mode only or 320-bit memory logic array blocks (MLABs),


    Original     		PDF SIII51004-1 320-bit 144-Kbit M144K SECDED EP3SE50

    dual port ram

    Abstract: EP2AGX260 A123 C789 EP2AGX125 EP2AGX190 EP2AGX45 EP2AGX65 shiftregister
    Text: 3. Memory Blocks in Arria II GX Devices AIIGX51003-2.0 Arria II GX memory blocks include 640-bit memory logic array blocks MLABs and 9-Kbit M9K blocks. You can configure each embedded memory block independently to be a single- or dual-port RAM, FIFO, ROM, or shift register with the Quartus ® II


    Original     		PDF AIIGX51003-2 640-bit dual port ram EP2AGX260 A123 C789 EP2AGX125 EP2AGX190 EP2AGX45 EP2AGX65 shiftregister

    SAE-AS5652

    Abstract: EBR-1553 AS5652 fifo vhdl 1553 VHDL 1553b VHDL fifo memory vhdl code for fifo and transmitter vhdl code for asynchronous fifo EBR1553B
    Text: Standard Products Enhanced Bit Rate MIL-STD-1553B Remote Terminal IP Advanced Datasheet August, 2008 INTRODUCTION MIL-STD-1553 has long been the standard in HiRel distributed serial communication for aerospace and defense applications. This standard has been updated and is now controlled by the


    Original     		PDF MIL-STD-1553B MIL-STD-1553 AS15531 AS5652 10Mbps RS-485 MIL-STD-1553B SAE-AS15531) SAE-AS5652 EBR-1553 EBR-1553 fifo vhdl 1553 VHDL 1553b VHDL fifo memory vhdl code for fifo and transmitter vhdl code for asynchronous fifo EBR1553B

    K6F8016R6B

    Abstract: K6F8016R6B-F
    Text: Preliminary CMOS SRAM K6F8016R6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 25, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F8016R6B 58/Typ. 32/Typ. K6F8016R6B-F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6F8016U6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR


    Original     		PDF K6F8016U6D

    K6X8016T3B-UF55

    Abstract: K6X8016T3B-UF70 K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF55
    Text: K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V Min • Three state outputs


    Original     		PDF K6X8016T3B 512Kx16 44-TSOP2-400F K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-UF55 K6X8016T3B-UF70 K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF55

    K6X8016T3B-UF55

    Abstract: K6X8016T3B K6X8016T3B-F K6X8016T3B-Q k6x8016t3btf55
    Text: K6X8016T3B Family CMOS SRAM Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		PDF K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-UF55 K6X8016T3B-F K6X8016T3B-Q k6x8016t3btf55

    K6F8016R6C

    Abstract: No abstract text available
    Text: K6F8016R6C Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft February 7, 2003 Preliminary 1.0 Finalize July 3, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F8016R6C 58/Typ. 32/Typ.

    K6F8016U6C

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6F8016U6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark May 1, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F8016U6C 58/Typ. 32/Typ.

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6F8016U6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 24, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F8016U6B 32/Typ. 58/Typ.

    K6F8016R6D

    Abstract: K6F8016R6D-F
    Text: Preliminary CMOS SRAM K6F8016R6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR


    Original     		PDF K6F8016R6D K6F8016R6D K6F8016R6D-F

    K6F8016U6D-XF70

    Abstract: K6F8016U6D
    Text: CMOS SRAM K6F8016U6D Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft April 26, 2004 Preliminary 0.1 Revised - Updated DC parameters ICC1, ICC2, ISB1, IDR


    Original     		PDF K6F8016U6D K6F8016U6D-XF70

    Untitled

    Abstract: No abstract text available
    Text: Advance CMOS SRAM KM616FU8110 Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark June 23, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF KM616FU8110 80/Typ. 25/Typ.

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM616FS8110 Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 30, 1999 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF KM616FS8110 85/Typ. 25/Typ.

    CS-102

    Abstract: K6F8016T6C
    Text: Preliminary CMOS SRAM K6F8016T6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 30, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F8016T6C 58/Typ. 32/Typ. CS-102

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K6F8016S6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 14, 2000 Preliminary 0.1 Revise - Change package type from FBGA to TBGA


    Original     		PDF K6F8016S6A 55/Typ. 35/Typ.

    512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

    Abstract: No abstract text available
    Text: Preliminary KM616FV8110 Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 23, 1999 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF KM616FV8110 85/Typ. 25/Typ. 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

    K6X8016T3B-F

    Abstract: K6X8016T3B-TQ70 K6X8016T3B K6X8016T3B-Q K6X8016T3B-TF55
    Text: Preliminary CMOS SRAM K6X8016T3B Family Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		PDF K6X8016T3B 512Kx16 44-TSOP2-400R K6X8016T3B-F K6X8016T3B-TQ70 K6X8016T3B-Q K6X8016T3B-TF55

    48-PIN

    Abstract: No abstract text available
    Text: REFERENCE SIZE SRAM 1 M egabit PART NUMBER 3 M egabit SPEED ns PACKAGE 128Kx8 7 0 ", 85, 100, 120, 150 32-Pin D IP 32-Pin F LA T P A C 15 128Kx8, 64Kx16, 32Kx32 25, 35, 45, 55, 70 66-Pin P G A 23 2 0 *, 25, 30, 35, 45 48-Pin SLC C 48-Pin ° r Lead 48-Pin y Lead


    OCR Scan     		PDF PS128M PS3232V DPS128X16CJ3/BJ3 PS128X16CH DPS128X16Y3 PS128X16H PS128X24BH PS512S8BN PS512S8N 48-PIN

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM6164002A CMOS SRAM 256Kx 16 Biit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (C M O S): 10 mA(Max.) Operating KM6164002A-12 : 260 mA(Max.)


    OCR Scan     		PDF KM6164002A 256Kx KM6164002A-12 164002A KM6164002A-20 KM6164002AJ 44-SOJ-4QO KM6164002A 304-bit

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616B4002-12 : 270 mA(Max.) KM616B4002-13:265 mA(Max.)


    OCR Scan     		PDF KM616B4002 KM616B4002-12 KM616B4002-13 KM616B4002-15 KM616B4002J 44-SQJ-400 KM616B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM 616BV4002J-12 : 240m A (M ax.)


    OCR Scan     		PDF KM616BV4002 616BV4002J-12 KM616BV4002J-15 4002J-20: KM616BV4002J 44-SOJ-400 KM616BV4002 304-bit 0031fc