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    512K X 8 SRAM Search Results

    512K X 8 SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7M4048L70N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L100N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L85N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048S35CB Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L120N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation

    512K X 8 SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    68S16000

    Abstract: AB-020
    Text: 512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : CMOS • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1


    Original     		PDF 68S16000/AB-020/025/35/45 220mW 68S16000 16Mbit 200pcs 183OC 225OC 219OC AB-020

    Untitled

    Abstract: No abstract text available
    Text: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		PDF CY14B108L CY14B108N 1024K 8/512K CY14B108L/CY14B108N

    CY14B108N-BA25XI

    Abstract: 54TSOP CY14B108L-BA25XI
    Text: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B108L CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N CY14B108N-BA25XI 54TSOP CY14B108L-BA25XI

    A81L801

    Abstract: 69LD
    Text: A81L801 Stacked Multi-chip Package MCP 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM Preliminary Document Title Stacked Multi-chip Package (MCP) 1M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM


    Original     		PDF A81L801 69-Ball MO-219 A81L801 69LD

    5962-06203

    Abstract: 5962-07210 "rad" sram
    Text: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)


    Original     		PDF 28MHz 1250C) 66MHz 1x10-10 8x10-10 1x10-9 5962-06203 5962-07210 "rad" sram

    GVT72512A8

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION GALVANTECH, INC. GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 ASYNCHRONOUS SRAM 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM


    Original     		PDF GVT72512A8 GVT72512A8 72512A8

    SOIC-36 300

    Abstract: 7C1048A CY7C1048 JESD22 512K x 8 bit sram 32 pin
    Text: Cypress Semiconductor Qualification Report QTP# 97118 VERSION 1.2 January, 1998 512K x 8 SRAM - R32D Technology - Fab4 Qualification CY7C1048/CY7C1049/CY62148 Cypress Semiconductor, Inc. 512K x 8 SRAM - R32 Technology Device: CY7C1048/CY7C1049/CY62148 Package: SOIC/SOJ


    Original     		PDF CY7C1048/CY7C1049/CY62148 32-pin, 400-mil 36-pin, CY7C1049-VC 30C/60 SOIC-36 300 7C1048A CY7C1048 JESD22 512K x 8 bit sram 32 pin

    GS74108AGP-12

    Abstract: No abstract text available
    Text: GS74108ATP/X TSOP, FP-BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 512K x 8 4Mb Asynchronous SRAM Features FP-BGA 512K x 8 Bump Configuration Package X • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum


    Original     		PDF GS74108ATP/X 44-pin GS74108AGP-12

    Untitled

    Abstract: No abstract text available
    Text: GS74108ATP/X TSOP, FP-BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 512K x 8 4Mb Asynchronous SRAM Features FP-BGA 512K x 8 Bump Configuration Package X • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum


    Original     		PDF GS74108ATP/X 44-pin 74108A

    GS74108AX-8

    Abstract: GS74108AGP-10I 74108A
    Text: GS74108AGP/X TSOP, FP-BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 512K x 8 4Mb Asynchronous SRAM Features FP-BGA 512K x 8 Bump Configuration Package X • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum


    Original     		PDF GS74108AGP/X 44-pin GS74108AX-8 GS74108AGP-10I 74108A

    DPS512X32MKY5

    Abstract: No abstract text available
    Text: 16 Megabit High Speed SRAM DPS512X32MKY5 PRELIMINARY DESCRIPTION: The DPS512X32MKY5 is the 512K x 32 SRAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 512K x 8 SRAM’s that are configured as 512K x 32.


    Original     		PDF DPS512X32MKY5 DPS512X32MKY5 500mV 30A190-04

    MSM8512SLMB

    Abstract: No abstract text available
    Text: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 512K x 8 SRAM MSM8512 - 70/85/10 Issue 4.5 : April 2001 Description 524,288 x 8 CMOS Static RAM The MSM8512 is a 4Mbit monolithic SRAM organised as 512K x 8 with access times from


    Original     		PDF MSM8512 100ns MIL-STD-883C. MIL-STD-883 5125K MSM8512SLMB

    AK68512D1C

    Abstract: 850C 512K x 8 bit Low Power CMOS Static RAM 512K x 8 bit sram 32 pin
    Text: AK68512D1C 524,288 x 8 Bit CMOS Static Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK68512D1C high density memory module is a static random access memory organized in 512K x 8 bit words. The assembly consists of one medium speed 512K x 8 SRAM in a TSOP


    Original     		PDF AK68512D1C AK68512D1C AK68512D1C-70 850C 512K x 8 bit Low Power CMOS Static RAM 512K x 8 bit sram 32 pin

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet June 2006 www.aeroflex.com/4MSRAM FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R512K8 67E-7cm2/bit 0E14n/cm2 36-lead UT8R512Kin

    UT8R512K8

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R512K8

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2006 www.aeroflex.com/4MSRAM FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R512K8 67E-7cm2/bit 0E14n/cm2 36-lead UT8R512in

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet September 2008 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R512K8 67E-7cm2/bit 0E14n/cm2 36-lead

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet June 2006 www.aeroflex.com/4MSRAM FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state


    Original     		PDF UT8R512K8 67E-7cm2/bit 0E14n/cm2 36-lead UT8R512Kein

    89C1632

    Abstract: No abstract text available
    Text: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture


    Original     		PDF 89C1632 32-Bit) 101MeV-cm2/mg 68-pin 89C1632

    89C1632

    Abstract: 512K x 8 bit sram 32 pin
    Text: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture


    Original     		PDF 89C1632 32-Bit) 101MeV-cm2/mg 68-pin 89C1632 512K x 8 bit sram 32 pin

    AK68512D1C

    Abstract: No abstract text available
    Text: AK68512D 524,288 x 8 Bit CMOS Static Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK68512D-1C high density memory module is a static random access memory organized in 512K x 8 bit words. The assembly consists of one medium speed 512K x 8 SRAM in a TSOP


    Original     		PDF AK68512D AK68512D-1C AK68512D AK68512D1C-70 AK68512D1C

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, DDRIIb4 SRAM 18Mb DDRII CIO SRAM MT57W2MH8J MT57W1MH18J MT57W512H36J 4-Word Burst FEATURES • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window


    Original     		PDF MT57W1MH18J

    Untitled

    Abstract: No abstract text available
    Text: IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module The IDT7MB4048 Is a 4-megabit (512K x 8) Static RAM module constructed on a multilayer epoxy laminate (FR-4)


    OCR Scan     		PDF IDT7MB4048 32-pin, IDT7MB4048 32-pin 7MB4048 512Kx 0D21254

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6M 8512 PRELIMINARY 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • 4Mb SRAM module compatible with JEDEC standard pinout for 512k x 8 SRAM The Mosel MS6M8512 is a 4 Megabit 4,194,304 bits static random access memory module organized as 512K


    OCR Scan     		PDF MS6M8512 PID041