CAT25010
Abstract: No abstract text available
Text: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION 10 MHz SPI compatible The CAT25010/20/40 are 1-Kb/2-Kb/4-Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16-byte page
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CAT25010,
CAT25020,
CAT25040
16-byte
CAT25010/20/40
128x8/256x8/512x8
MD-1006
CAT25010
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"Single-Port RAM"
Abstract: No abstract text available
Text: New Products FPGAs New Spartan-IIE FPGA Family for Digital Consumer Convergence Applications Spartan-IIE FPGAs offer significant performance improvements for nextgeneration consumer products. Table 2. The memory block can be used as 4096x1, 2048x2, 1024x4, 512x8, or
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LVCMOS18
"Single-Port RAM"
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82S147B
Abstract: F0180 mux 8 to 1 timing
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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512x8)
82S147B
82S147B
500ns
F0180
mux 8 to 1 timing
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25616
Abstract: IN93AA66A
Text: IN93AA66N, IN93AA66D 4K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE compatible to САТ93С66 Catalyst DESCRIPTION The IN93LC66 is a Electric erasable programmable ROM (EEPROM) memory data capacity 4K (512x8 or 256x16) with 3-wire interface. There are 3 modification of ICs
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IN93AA66N,
IN93AA66D
IN93LC66
512x8
256x16)
IN93AA66AD/AN
IN93AA66BD/BN
IN93AA66CN/CD
IN93AA66-TSe
25616
IN93AA66A
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IN25AA020D
Abstract: SCK 058 IN25AA020 A8011
Text: IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL PERIPHERAL INTERFACE SPI . DESCRIPTION The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface. *The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI).
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IN25020N,
IN25020D,
IN25040N,
IN25040D
IN25020N/D
256x8)
IN25040N/D
512x8)
MS-012A)
MS-001BA)
IN25AA020D
SCK 058
IN25AA020
A8011
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M95010
Abstract: M95020 M95040 M95040-WBN6 M95040-WMN6 ST10
Text: 2001-12-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-975-40 M95040-WBN6 512x8 EEPROM 73-975-57 M95040-WMN6 512x8 EEPROM M95040 M95020, M95010 4/2/1 Kbit Serial SPI Bus EEPROM
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M95040-WBN6
512x8
M95040-WMN6
M95040
M95020,
M95010
M950x0
M950x0-W
M950x0-S
M95010
M95020
M95040
ST10
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marking S1T
Abstract: 25040e
Text: CAT25010, CAT25020, CAT25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM Description The CAT25010/20/40 are 1−Kb/2−Kb/4−Kb Serial CMOS EEPROM devices internally organized as 128x8/256x8/512x8 bits. They feature a 16−byte page write buffer and support the Serial
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CAT25010,
CAT25020,
CAT25040
CAT25010/20/40
128x8/256x8/512x8
751BD
CAT25010/D
marking S1T
25040e
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TA 7129
Abstract: 93438
Text: 93438 ^ ISOPLANAR SCHOTTKY TTL MEMORY 512x8-B IT PROGRAMMABLE READ ONLY MEMORY D E S C R IP T IO N — The 93438 is a fully decoded 4096-bit field Programmable R O M organ ized 512 words by eight bits per word._The 93438 has uncommitted collector outputs.
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512x8-BIT
4096-bit
24-PIN
TA 7129
93438
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XICOR x2004
Abstract: X2004 X2004M X2004M-25
Text: JÜH t PRELIMINARY INFORMATION 4K Military 512x8 Bit X2004M Nonvolatile Static RAM is fabricated w ith the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma ble nonvolatile memories. The X2004 features the JEDEC approved pinout for byte-wide memories, com
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X2004M
512x8
X2004
X2004
X2004M
XICOR x2004
X2004M-25
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siemens Package Outlines
Abstract: No abstract text available
Text: » ÔE3St.D5 □GCHG 4Q MS'! SIEMENS 4 Kbit 512x8 bit Serial CMOS EEPROMs, Serial Peripheral Interface SLx 25C04 Preliminary Features • Data EEPROM internally organized as 512 bytes and 64 pages x 8 bytes • Low power CMOS • V cc = 2.7 to 5.5 V operation
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512x8
25C04
106cycles1
GPS051
siemens Package Outlines
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OS212
Abstract: national 93c66A
Text: 93C66A/B M ic r o c h ip 4K 5.0V Automotive Temperature Microwire Serial EEPROM FEATURES • Single supply 5.0V operation • Low power CMOS technology - 1 mA active current typical - 1 (iA standby current (maximum) • 512x8 bit organization (93C66A)
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93C66A/B
512x8
93C66A)
93C66B)
93C66A
93C66AT
93C66B
93C66BT
DS21207C-page
OS212
national 93c66A
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Untitled
Abstract: No abstract text available
Text: MT42C8254 256K X 8 VRAM [W IIC R Q N 256K X 8 DRAM WITH 512x8 SAM VRAM • Industry-standard pinout, tim ing and functions • NIBBLE 4-bit W RITE and M ASKED W RITE access cycles • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply
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MT42C8254
512-cycle
512x8
40-Pin
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Untitled
Abstract: No abstract text available
Text: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte
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30mA/100nA
A/100
A/100
28C04A
28C16A
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AN404
Abstract: ST24C04 ST24W04 ST25C04 ST25W04
Text: r z j SG S-TH O M SO N ^ 7 # , SfflQ@^ lllLi @TrMRia(gi ST24C04, ST25C04 ST24W04, ST25W04 SERIAL ACCESS 4K ( 512x8 EEPROM 1 MILLION ERASE/WRrTE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x04 versions - 2.5V to 5.5V for ST25x04 versions
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ST24C04,
ST25C04
ST24W04,
ST25W04
512x8)
ST24x04
ST25x04
ST24W04
ST24/25C04
AN404
ST24C04
ST25C04
ST25W04
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x2864
Abstract: X2864A x2864b X24LC04D X24LC04DI X24LC04P X24LC04PI X24LC04S X24LC04SI
Text: im PRELIMINARY INFORMATION X24LC04 X24LC04I Commercial Industrial 4K 512x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical —60 ixA Standby Current Typical • Internally Organized as Two Pages
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X24LC04
X24LC04I
512x8
14-Pin
X24LC04,
X24LC04I
x2864
X2864A
x2864b
X24LC04D
X24LC04DI
X24LC04P
X24LC04PI
X24LC04S
X24LC04SI
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NOVRAM
Abstract: No abstract text available
Text: ^417143 SEE D XICOR INC Advance Information TÖ3 X i Q K X20C05 512x8 High Speed AUTOSTORE NOVRAM T -4 b r2 3 -3 ~ l 4K FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum
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X20C05
512x8
250mA
X20C05
FHDF14
D0Q33D7
NOVRAM
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Untitled
Abstract: No abstract text available
Text: QSK 512x8 Bit X2404M Military 4K Electrically Erasable PROM TYPICAL FEATURES • Internally Organized as Two Pages —Each 256 x 8 • 2 Wire Serial Interface • Provides Bidirectional Data Transfer Protocol • Eight Byte Page Write Mode —Minimizes Total Write Time Per Byte
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512x8
X2404M
X2404
X2404
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Untitled
Abstract: No abstract text available
Text: xhe Commercial Industrial 4K X2004 X2004I 512x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma ble nonvolatile memories. The X2004 features the JEDEC approved pinout for byte-wide memories, com
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X2004
X2004I
512x8
X2004
X2004,
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NCC 5551
Abstract: CI 555 data X20C04 X20C05 X20C16 IS555
Text: Advance Information X20C05 4K 512x8 High Speed AUTOSTORE NOVRAM_ FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum • Power-on Recall
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X20C05
512x8
X20C16
51oltage
PGMT15
X20C05
NCC 5551
CI 555 data
X20C04
X20C16
IS555
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rom 512x8
Abstract: chip 8205 82S214 8205 A 82S215
Text: signotics 2048-BIT BIPOLAR ROM 256x8 ROM 4096-BIT BIPOLAR ROM (512x8 ROM) 8204 8205 82S 214) 82S215 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION T h e 8 2 0 4 / 8 2 S 2 1 4 a n d 8 2 0 5 / 8 2 S 2 1 5 are S c h o ttk y - c la m p e d R e ad
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2048-BIT
256x8
4096-BIT
512x8
8204/82S214
8205/82S215
rom 512x8
chip 8205
82S214
8205 A
82S215
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ST24C04
Abstract: VCC-10 T24C0
Text: rz 7 SGS-THOMSON ^ 7 # M gfô@i[Li(gïï[ÏMD(gt ST24C04 4K BU (512X8 SERIAL ACCESS CMOS EEPROM MEMORY PRELIMINARY DATA • 2 PAGES OF 256 X 8 BITS ■ 2 WIRE SERIAL INTERFACE, COMPATIBLE WITH THE INTER-INTEGRATED CIRCUIT (l2C) BUS. ■ SINGLE POWER SUPPLY (READ AND WRITE)
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ST24C04
512X8)
PS014
PS014
ST24C04
VCC-10
T24C0
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27s31
Abstract: No abstract text available
Text: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide
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Am27S31
/27S31A
512x8)
Am27S31/27S31
Am27S31/27S31A
27s31
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Untitled
Abstract: No abstract text available
Text: a Am4701 -45 Bidirectional 512x8 FIFO Am4701 BIFIFO Previously 67C4701 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 2-512x6 FIFO buffer, provides asynchronous bidirectional full duplex communication. • Generates and detects framing bit. • Full and Empty Flags
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Am4701
512x8
67C4701)
2-512x6
Am470l
20-003B
11120-007B
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Untitled
Abstract: No abstract text available
Text: HOLTEK r r HT24L C04 4K 2- Wire CMOS Serial EEPROM Features • • • • • • Operating voltage: 2.4V~5.5V Low power consumption - Operation: 5mA max. - Standby: 5|iA max. Internal organization - 4K HT24LC04 : 512x8 2-wire serial interface Write cycle time: 5ms max.
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HT24L
HT24LC04)
512x8
40-year
HT24LC04
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