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    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16512A, IS43/46TR16512AL, 512Mx16 8Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V           


    Original     		PDF IS43/46TR16512A, IS43/46TR16512AL, 512Mx16 cycles/64 cycles/32 Inte-15HBLA1 96-ball 1600MT/s IS46TR16512AL-125KBLA1

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16512A, IS43/46TR16512AL, 512Mx16 8Gb DDR3 SDRAM SEPTEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  -Backward compatible to 1.5V        


    Original     		PDF IS43/46TR16512A, IS43/46TR16512AL, 512Mx16 cycles/64 cycles/32 SequenAL-15HBLA1 96-ball 1600MT/s IS46TR16512AL-125KBLA1

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    H5TQ2G63FFR-RDC

    Abstract: H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC
    Text: Page 1 DDR3 SDRAM Solder- Dow n VDD DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.5V 2Gb 256Mx8 DDR3 1866 H5TQ2G83EFR-RDC FBGA 78ball 8Bank, 1.5V, CL13,13-13-13 Now DDR3 1600 H5TQ2G83CFR-PBC FBGA(78ball) 8Bank, 1.5V, CL11,11-11-11 Now H5TQ2G83EFR-PBC


    Original     		PDF 256Mx8 H5TQ2G83EFR-RDC 78ball) H5TQ2G83CFR-PBC H5TQ2G83EFR-PBC H5TQ2G83CFR-H9C H5TQ2G83EFR-H9C H5TQ2G63FFR-RDC H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC

    K4B8G1646B

    Abstract: No abstract text available
    Text: Rev. 1.12, Aug. 2012 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B8G1646B 96FBGA K4B8G1646B

    MV78230

    Abstract: Xelerated tcam ARMADA 300 ECC ARMADA® XP MP Core Highly Integrated Marvell ARMv7 SoC Processors Datasheet
    Text: MV78230/78x60 Functional Specifications MV78230, MV78260, and MV78460 ARMADA XP Family of Highly Integrated Multi-Core ARMv7 Based SoC Processors Functional Specifications – Unrestricted Doc. No. MV-S107021-U0, Rev. A May 29, 2014, Preliminary Marvell. Moving Forward Faster


    Original     		PDF MV78230/78x60 MV78230, MV78260, MV78460 MV-S107021-U0, MV78230/78x60 MV-S107021-U0 MV78230 Xelerated tcam ARMADA 300 ECC ARMADA® XP MP Core Highly Integrated Marvell ARMv7 SoC Processors Datasheet

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.12, Aug. 2012 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B8G1646B 96FBGA

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Feb. 2013 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant Industrial datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B8G1646B 96FBGA

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Jan. 2014 K4B8G1646Q DDP 8Gb Q-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B8G1646Q 96FBGA

    NT4GC64B88B0NS-DI

    Abstract: NT2GC64B PC3L-12800 NT4GC64B NT2GC64CH4B0PS-DI 88B0NS 512Mx16 NT4GC64C88B0NS-DI NT2GC64BH4B0PS-DI NT8GC64B8HB0NS-DI
    Text: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600


    Original     		PDF NT2GC64B NT4GC64B 88B0NS NT8GC64B 1024M 256Mx16 512Mx8 204-Pin 256Mx64 NT4GC64B88B0NS-DI PC3L-12800 NT2GC64CH4B0PS-DI 512Mx16 NT4GC64C88B0NS-DI NT2GC64BH4B0PS-DI NT8GC64B8HB0NS-DI

    Untitled

    Abstract: No abstract text available
    Text: NT2GC64B C H4B0PS / NT4GC64B(C)88B0(1)NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort


    Original     		PDF NT2GC64B NT4GC64B NT8GC64B 1024M 256Mx16 512Mx8 204-Pin 256Mx64 256Mx16

    Untitled

    Abstract: No abstract text available
    Text: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600


    Original     		PDF NT2GC64B NT4GC64B 88B0NS NT8GC64B 1024M 256Mx16 512Mx8 204-Pin 256Mx64 256Mx16

    88F6W11

    Abstract: No abstract text available
    Text: 88F6710/6707/6W11 Functional Specifications 88F6710, 88F6707, and 88F6W11 ARMADA 370 SoC Functional Specifications – Unrestricted Doc. No. MV-S107979-U0, Rev. B May 26, 2014, Preliminary Marvell. Moving Forward Faster Document Classification: Proprietary Information


    Original     		PDF 88F6710/6707/6W11 88F6710, 88F6707, 88F6W11 MV-S107979-U0, 88F6710/6707/6W11 MV-S107979-U0 88F6W11

    NT2GC64B

    Abstract: 88B0NS max 1786
    Text: NT2GC64B C H4B0PS / NT4GC64B(C)88B0NS / NT8GC64B(C)8HB0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600 256Mx16 and 512Mx8 SDRAM B-Die Features •Performance: Speed Sort PC3(L)-10600


    Original     		PDF NT2GC64B NT4GC64B 88B0NS NT8GC64B 1024M 256Mx16 512Mx8 204-Pin 256Mx64 max 1786

    K4B8G

    Abstract: No abstract text available
    Text: Rev. 1.0, Feb. 2013 K4B8G1646B DDP 8Gb B-die DDR3 SDRAM 96FBGA with Lead-Free & Halogen-Free RoHS compliant Industrial datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B8G1646B 96FBGA K4B8G