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    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)


    Original     		PDF 512Kx40-SOP 3DSR20M40VS6507 512Kx40, 256Kx16 100Krad 110MeV 100nF MMXX00000000XXX 3DFP-0507-REV

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)


    Original     		PDF 512Kx40-SOP 3DSR20M40VS6507 512Kx40, 256Kx16 100Krad 110MeV 100nF MMXX00000000XXX 3DFP-0507-REV

    512Kx48

    Abstract: No abstract text available
    Text: WS512K48-XG4WX HI-RELIABILITY PRODUCT 512Kx48 SRAM MODULE ADVANCED* FEATURES • 2V Data Retention Devices Available WS512K48L-XXX Low Power Version ■ Access Times 17, 20, 25, 35ns ■ Packaging: • 116 Lead, 40.0mm Hermetic CQFP (Package 504) ■ TTL Compatible Inputs and Outputs


    Original     		PDF WS512K48-XG4WX 512Kx48 WS512K48L-XXX WS512K48-XG4WX 512K48

    w90n740cdg

    Abstract: driver circuit for irs 2110 tms 3874 W90N740 w90n740cd 30B4 diode aic 3860 alps 502C MII 75-12 A3 SCC16
    Text: W90N740CD/W90N740CDG DATA SHEET WINBOND 32-BIT ARM7TDMI-BASED MICRO-CONTROLLER The information described in this document is the exclusive intellectual property of Winbond Electronics Corporation and shall not be reproduced without permission from Winbond.


    Original     		PDF W90N740CD/W90N740CDG 32-BIT W90N740-based w90n740cdg driver circuit for irs 2110 tms 3874 W90N740 w90n740cd 30B4 diode aic 3860 alps 502C MII 75-12 A3 SCC16

    uses of water level controller using timer 555 ic

    Abstract: ha 13108 pal cvbs frame synchronizer x86 series sparkle 7404n STPCC0166BTC3 stpcc0166 60800 91211
    Text: STPC CONSUMER  PC Compatible Embeded Microprocessor PRELIMINARY DATA • POWERFUL X86 PROCESSOR ■ 64-BIT BUS ARCHITECTURE ■ 64-BIT DRAM CONTROLLER ■ SVGA GRAPHICS CONTROLLER ■ UMA ARCHITECTURE ■ VIDEO SCALER ■ DIGITAL PAL/NTSC ENCODER ■ VIDEO INPUT PORT


    Original     		PDF 64-BIT 135MHz PBGA388 uses of water level controller using timer 555 ic ha 13108 pal cvbs frame synchronizer x86 series sparkle 7404n STPCC0166BTC3 stpcc0166 60800 91211

    crt 3BP1

    Abstract: ali 3328 8mx32 simm 72 pin water level controller using timer 555 131-8D PCIM 176 display si 7200 gc 4Mx4 dram simm bitblt s3 common cathode 14-segment display driver
    Text: STPC Client Programming Manual Issue 2.2 August 28, 2000 STMicroelectronics 1/446 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other


    Original     		PDF

    IS61WV5128EDBLL

    Abstract: is61wv5128
    Text: IS61WV5128EDBLL IS64WV5128EDBLL 512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2011 DESCRIPTION The ISSI IS61/64WV5128EDBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)


    Original     		PDF IS61WV5128EDBLL IS64WV5128EDBLL 304-bit IS61/64WV5128EDBLL MS-027. MO-207 is61wv5128

    images of pin configuration of IC 74138

    Abstract: t5 94v-0 tv philips pin out diagram of 74138 ic IC 3-8 decoder 74138 pin diagram 3-8 decoder 74138 pin diagram W99702 irs12 microcontroller ic 74148 SmartCard Writer 74148 IC datasheet
    Text: W90P710CD/W90P710CDG 32-BIT ARM7TDMI-BASED MCU W90P710CD/W90P710CDG 16/32-bit ARM microcontroller Product Data Sheet -1- Publication Release Date: September 19, 2006 Revision B2 W90P710CD/W90P710CDG Revision History REVISION DATE COMMENTS A 2005/12/02 Draft


    Original     		PDF W90P710CD/W90P710CDG 32-BIT 16/32-bit S21-62365999 images of pin configuration of IC 74138 t5 94v-0 tv philips pin out diagram of 74138 ic IC 3-8 decoder 74138 pin diagram 3-8 decoder 74138 pin diagram W99702 irs12 microcontroller ic 74148 SmartCard Writer 74148 IC datasheet

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS 512Kx48SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • ■ ■ ■ A ccess Tim es 17, 20, 25, 35ns ■ 2V D ata R etention Device Packaging: ■ TTL C om p atible Inputs and O utputs • 116 Lead, 40.0m m H e rm e tic CQFP Package 504


    OCR Scan     		PDF WS512K48-XG4WX 512Kx48SRAM S512K

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM540512CM 512Kx40 KMM540512CM isa512Kbitsx40 256Kx4 20-pin 72-pin KMM540512CM-6 KMM540512CM-7

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS 512Kx48 SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • A c c ess T im e s 17, 20, 25, 35ns ■ 2 V D ata R e te n tio n D evice ■ Packaging: ■ T T L C o m p a tib le In p uts and O u tp uts • 116 Lead, 4 0.0m m H e rm e tic CQFP Package 504


    OCR Scan     		PDF WS512K48-XG4WX 512Kx48 512K48

    Untitled

    Abstract: No abstract text available
    Text: WS512K48-XG4WX M/HITE /M ICROELECTRONICS 512Kx48 SRAM MODULE ADVANCED* FEATURES • Acce ss Tim e s 17, 20, 25, 35ns ■ 2V Data R eten tio n Device ■ Packaging: ■ TTL C o m p a tib le Inputs and Outp u ts • 116 Lead, 4 0 .0 m m H e rm e tic CQFP Package 504


    OCR Scan     		PDF WS512K48-XG4WX 512Kx48 512K48

    Untitled

    Abstract: No abstract text available
    Text: a M/HITE /MICROELECTRONICS 512Kx48 SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • A c c e s s T im e s 17, 20, 25, 35ns ■ 2V Data R etention D evice ■ Packaging: ■ T T L Com patible Inputs and Outputs • 116 Lead, 40.0m m H erm etic CQFP Packag e 504


    OCR Scan     		PDF 512Kx48 WS512K48-XG4WX 512K48

    512kx4

    Abstract: EDI8M4512C A16-A18
    Text: EDI8M4512C m o \ The future. . . 45/55/70 _ Module Ä ¥ Ä lN l I OINUFÚ^MñTDÚlN] 512Kx4 SRAM CMOS, High Speed Module Features The EDI8M4512C is a Two Megabit 512Kx4-bit High Speed Static RAM Module with four bi-directionai input/output lines. The module is constructed


    OCR Scan     		PDF EDI8M4512C 512Kx4 EDI8M4512C 512Kx4-bit) 64Kx4 100modules MIL-STD-883 A0-A18 A16-A18

    512kx4

    Abstract: No abstract text available
    Text: EDI8M4512C m o \ 45/55/70 Module The future. . . 512Kx4 SRAM CMOS, High Speed Module Features The EDI8M4512C is a Two Megabit 512Kx4-bit High Speed Static RAM Module with four bi-directionai input/output lines. The module is constructed of eight 64Kx4 Static RAMs in leadless chip carriers


    OCR Scan     		PDF 512Kx4 EDI8M4512C 512Kx4-bit) 64Kx4 MIL-STD-883 EDI8M4512C A0-A18

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 050f1 1AC1S-00-MAY94 HY51V4403BJ HY51V4403BU HYS1V4403BSU

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY514410A 8-10-A 4b750fl 000147b HY514410AJ HY514410AU HY514410AT

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


    OCR Scan     		PDF 5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU

    Untitled

    Abstract: No abstract text available
    Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,


    OCR Scan     		PDF HY51V4403B 576x4-bit. HY51V4403B 1AC16-10-MAY95 HY51V4403BJ HY51V4403BLJ

    Untitled

    Abstract: No abstract text available
    Text: HY51V17400A Series •HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400A HY51V17400A 1AD35-00-MAY95 HY51V17400AJ HY51V17400ASLJ HY51V17400AT HY51V17400ASLT

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W O R D X 4 BIT D YN A M IC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514410AP/AJ/ASJ/AZ 350mil) TC51441OAP/AJ/ASJ/AZ-60

    TC51440ASJ

    Abstract: No abstract text available
    Text: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF TC514410ASJ-60/70/80 TC514410ASJ 300mil) TC5144100/ 512KX4 TC51440ASJ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC51V4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced


    OCR Scan     		PDF TC51V4400ASJL/AFTL80 TC51V 4400ASJL/AFTL TC51V4400ASJL/AFTL TC51V4400/ 512KX4 QQE542fl

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


    OCR Scan     		PDF ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC