SPT0305
Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SPT0305
BST50
SMD MARKING CODE RAC
HYB3118165
HYB5118165
5118165BSJ-60
5118165BSJ
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HYB3116165BSJ
Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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16-Bit
HYB5116165BSJ-50/-60
HYB3116165BSJ/
HYB3118165BSJ/
HYB5116165
HYB3116165
HYB5118165
HYB3118165
HYB3116165BSJ
HYB3118165
HYB3118165BSJ
HYB5118165
P-TSOP
5118165BSJ-60
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Untitled
Abstract: No abstract text available
Text: 2M x 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Information • 2 097 152 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version)
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32-Bit
322005S/GS-50/-60
L-SIM-72-10
GLS58332
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5116 ram
Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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PDF
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16-Bit
HYB5116165BSJ
HYB5118165BSJ
HYB5118165BSJ-50)
HYB5118165BSJ-60)
HYB51181
165BSJ-50/-60/-70
16-EDO
P-SOJ-42
5116 ram
HYB5118165BSJ-50
HYB5116165BSJ-50
HYB5116165BSJ-60
HYB5116165BSJ-70
HYB5118165BSJ-60
HYB5118165BSJ-70
TRAC-70
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Q67100-Q2062
Abstract: No abstract text available
Text: 1M x 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Information • SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)
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PDF
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32-Bit
321005S/GS-50/-60
L-SIM-72-10
GLS05833
Q67100-Q2062
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )
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16-Bit
Y//77777/
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which
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THM3210B5BS/BSG-60/70
3210B5BS/BSG
5118165BJ
3210B
THM3210B5BS/BSG-60/70
M3210B5BS/BSG
DM04020695
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5116 RAM
Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)
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16-Bit
5116165BSJ
5118165BSJ
HYB3118165BSJ-50)
HYB3118165BSJ-60)
I/01-I/016
16-EDO
777777yÃ
5116 RAM
bsj7
siemens fog
mug 14 431
TNC 24 mk 2
HYB3116165BSJ-50
HYB3116165BSJ-60
HYB3116165BSJ-70
HYB3118165BSJ-50
HYB3118165BSJ-60
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SIEMENS BST
Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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OCR Scan
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PDF
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16-Bit
HYB5118165
HYB3118165
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
SIEMENS BST
SIEMENS BSt L 45 100
BST50
code marking rah
SIEMENS BST 10 20
Q1107
SIEMENS BST H
siemens BST H 04 40
SIEMENS BST P
SIEMENS BST L
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SIEMENS BST 68
Abstract: BST50 3118165 SIEMENS BST Q
Text: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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OCR Scan
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PDF
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SIEMENS BST 68
BST50
3118165
SIEMENS BST Q
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time
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16-Bit
5116165BSJ
5118165BSJ
5118165BSJ-50)
5118165BSJ-60)
5118165BSJ-7EDO
E35hQ5
165BSJ-50/-60/-70
16-EDO
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Untitled
Abstract: No abstract text available
Text: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CM OS technology for high performance and low power. The 5118165B offers Extended
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PDF
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HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T 5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5118165BJ/BFT-60/70
5118165BJ/BFT
5118165BJ/
DR16160695
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5116165
Abstract: 5118165 EDO DRAM
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C
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16-Bit
5116165BSJ
5118165BSJ
5118165BSJ-50)
5118165BSJ-60)
5118165BSJ-70)
5116165BSJ-50)
5116165BSJ-60)
165BSJ-50/-60/-70
5116165
5118165
EDO DRAM
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MSM5118165B
Abstract: TSOP 86 Package
Text: O K I Semiconductor 5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION 5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The 5118165B achieves high integration, high-speed operation, and low-power
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E2G0055-17-41
MSM5118165B_
576-Word
16-Bit
TheMSM5118165B
MSM5118165B
42-pin
TSOP 86 Package
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Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
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P-SOJ-26/20-5
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thv8
Abstract: HYB39S16800T 16m x 4 hyb
Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15
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L-SIM-72-12
324020S/GS
324025S/GS
L-SIM-72-15
328020S/GS
328025S/GS
364020S/GS
L-SIM-72-13
364035S/GS
thv8
HYB39S16800T
16m x 4 hyb
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faa11
Abstract: 5118165 d lt 7210
Text: SIEMENS 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Inform ation • 1 048 576 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access tim e
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PDF
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32-Bit
321005S/GS-50/-60
321005S/GS-50/-60
i-f1111111111111
faa11
5118165
d lt 7210
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Inform ation • 2 097 152 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access time
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OCR Scan
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PDF
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32-Bit
322005S/GS-50/-60
322005S/GS-50/-60
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
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P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
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Q67100-Q2066
Abstract: edo simm 20.32 mm
Text: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 • SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)
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OCR Scan
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PDF
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32-Bit
322005S/GS-50/-60
L-SIM-72-10
GLS58332
Q67100-Q2066
edo simm 20.32 mm
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Z1132
Abstract: No abstract text available
Text: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 5118165B offers Extended
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OCR Scan
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PDF
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HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
Z1132
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5118165
Abstract: No abstract text available
Text: SIEMENS 1M x 64-Bit Dynamic RAM EDO Module HYM 641005GS-50/-60 168 pin buffered DIMM module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 1M x 64 organisation • Extended Data Out EDO • Performance:
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64-Bit
641005GS-50/-60
L-DIM-168-19
DM168-19
5118165
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