ZENER 148 Datasheet
Abstract: IC 406
Text: NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built–In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2340
100mH,
ZENER 148 Datasheet
IC 406
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NTE2336
Abstract: No abstract text available
Text: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2336
500mA,
100mH,
NTE2336
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zener 4A
Abstract: Zener 224 NTE2336
Text: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built−In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2336
500mA,
100mH,
zener 4A
Zener 224
NTE2336
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75372
Abstract: 2SJ654
Text: Ordering number : ENN7537 2SJ654 P-Channl Silicon MOSFET 2SJ654 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SJ654] 4.5 2.8 5.6 18.1 16.0 3.2 3.5 7.2 10.0 2.4
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ENN7537
2SJ654
2SJ654]
O-220ML
75372
2SJ654
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IRGB4060D
Abstract: IRF1010 CT4-15
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
O-220AB
IRGB4060D
IRF1010
CT4-15
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Untitled
Abstract: No abstract text available
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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97073B
IRGB4060DPbF
O-220AB
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IRF1010
Abstract: 8A2021
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
IRF1010
O-220AB
IRF1010
8A2021
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Untitled
Abstract: No abstract text available
Text: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4060DPbF
IRF1010
O-220AB
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2SJ664
Abstract: No abstract text available
Text: 2SJ664 Ordering number : EN8589 P-Channel Silicon MOSFET 2SJ664 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
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2SJ664
EN8589
2SJ664
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K3618
Abstract: 2SK3618
Text: 2SK3618 Ordering number : ENN8325 2SK3618 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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2SK3618
ENN8325
K3618
2SK3618
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-252-2L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR
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O-252-2L
MJD122
O-252-2L
TIP122
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L MJD127 Plastic-Encapsulate Transistors TO-252-2L TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER
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O-252-2L
MJD127
TIP127
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AO4292
Abstract: No abstract text available
Text: AO4292 100V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS αMOS MV technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V)
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AO4292
AO4292
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-251-3L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR
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O-251-3L
MJD122
O-251-3L
TIP122
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AO4452
Abstract: ao44
Text: AO4452 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
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AO4452
AO4452
ao44
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2SK3519-01
Abstract: No abstract text available
Text: 2SK3519-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3519-01
O-220AB
2SK3519-01
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2SK3520-01MR
Abstract: L498
Text: 2SK3520-01MR Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3520-01MR
O-220F
2SK3520-01MR
L498
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Hitachi DSA002759
Abstract: No abstract text available
Text: 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 Z 1st. Edition January 1999 Features • Low on-resistance N Channel : RDS(on) ≤ 0.17Ω, VGS = 10V, ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = –10V, ID = –4A • 4V gate drive devices.
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4AM17
ADE-208-729
Hitachi DSA002759
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2SK3520-01MR
Abstract: No abstract text available
Text: 2SK3520-01MR FUJI POWER MOSFET 2SK3520-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings 10 1 10 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof D=0.5 0.2 0.1 0.05 o Zth ch-c [ C/W]
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2SK3520-01MR
O-220F
2SK3520-01MR
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Untitled
Abstract: No abstract text available
Text: 2SK3519-01 FUJI POWER MOSFET 2SK3519-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 1 10 D=0.5 o Zth ch-c [ C/W] 10 0.2
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2SK3519-01
O-220AB
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AO4452L
Abstract: AO4452 ao44 Universal Technology
Text: AO4452L N-Channel SDMOS TM Power Transistor General Description Product Summary The AO4452L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
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AO4452L
AO4452L
MaximumO4452L
AO4452
ao44
Universal Technology
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RDN080N25
Abstract: No abstract text available
Text: RDN080N25 Transistors Switching 250V, 8A RDN080N25 zExternal dimensions (Units : mm) TO-220FN 4.5 +0.3 −0.1 10.0 +0.3 −0.1 5.0±0.2 8.0±0.2 15.0 +0.4 −0.2 14.0±0.5 zApplication Switching 1.2 +0.2 2.8 −0.1 3.2±0.2 12.0±0.2 zFeatures 1) Low on-resistance.
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RDN080N25
O-220FN
RDN080N25
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AO4452
Abstract: No abstract text available
Text: AO4452 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
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AO4452
AO4452
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Untitled
Abstract: No abstract text available
Text: 2SK3520-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3520-01MR
MOSFET200303
O-220F
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