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    50V 200A ULTRA FAST DIODE Search Results

    50V 200A ULTRA FAST DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    50V 200A ULTRA FAST DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf 560

    Abstract: IRGMVC50U transistor 13a 600v bipolar transistor td tr ts tf
    Text: PD -90825A IRGMVC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features • • • • • • VCES = 600V Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz


    Original     		PDF -90825A IRGMVC50U high-curren340] 5M-1994. O-258AA irf 560 IRGMVC50U transistor 13a 600v bipolar transistor td tr ts tf

    pn 4420

    Abstract: IBGT FP300TS10U 50V 200A ultra fast diode
    Text: XI'AN IR-PERI Company FP300TS10U PRELIMINARY “ HALF-BRODGE ” HEXFET Power MOSFET INT-A -PAK Features • • • • • • 3 VDSS=100V Advanced Process Technology Ultra Low On-Resistance 4 5 1 Dynamic dv/dt Rating 175 C Operating Temperature RDS on =0.005Ω


    Original     		PDF FP300TS10U 100oC 125oC pn 4420 IBGT FP300TS10U 50V 200A ultra fast diode

    transistor 200A 24V

    Abstract: HFA06PB120 IRFP250
    Text: PD -2.363A HFA06PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA06PB120 116nC HFA06PB120 transistor 200A 24V IRFP250

    2383A

    Abstract: HFA08TB120 IRFP250
    Text: PD -2.383A HFA08TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA08TB120 140nC HFA08TB120 2383A IRFP250

    HFA08PB120

    Abstract: IRFP250
    Text: PD -2.365A HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA08PB120 140nC HFA08PB120 IRFP250

    HFA12PA120C

    Abstract: IRFP250
    Text: PD -2.362A HFA12PA120C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA12PA120C 116nC HFA12PA120C IRFP250

    HFA06TB120

    Abstract: IRFP250
    Text: PD -2.382A HFA06TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA06TB120 116nC HFA06TB120 IRFP250

    DI 380 Transistor

    Abstract: HFA08TB120S IRFP250 140N
    Text: PD - HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA08TB120S 140nC HFA08TB120S DI 380 Transistor IRFP250 140N

    HFA06TB120S

    Abstract: IRFP250
    Text: PD - HFA06TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA06TB120S 116nC HFA06TB120S IRFP250

    Irf 1540 G

    Abstract: Irf 1540 irf 30A HFA16PB120 IRFP250
    Text: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI


    Original     		PDF -95686A HFA30PB120PbF 120nC O-247AC HFA16PB120 Irf 1540 G Irf 1540 irf 30A IRFP250

    Untitled

    Abstract: No abstract text available
    Text: PD -95686 HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI


    Original     		PDF HFA30PB120PbF 120nC O-247AC HFA16PB120 O-247AC

    HFA04TB60

    Abstract: IRFP250
    Text: PD -2.399 HFA04TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.8V Qrr * = 40nC di rec M/dt * = 280A/µs


    Original     		PDF HFA04TB60 HFA04TB60 IRFP250

    HFA08TB60

    Abstract: IRFP250
    Text: PD -2.341 HFA08TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA08TB60 HFA08TB60 IRFP250

    HFA15TB60

    Abstract: IRFP250
    Text: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		PDF HFA15TB60 HFA15TB60 IRFP250

    HFA30TA60C

    Abstract: IRFP250
    Text: PD -2.335 HFA30TA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA30TA60C HFA30TA60C IRFP250

    HFA30PA60C

    Abstract: IRFP250
    Text: PD -2.336 rev. A 04/98 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI


    Original     		PDF HFA30PA60C HFA30PA60C IRFP250

    Irf 1540 G

    Abstract: HFA16PB120 HFA30PB120 IRFP250
    Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and


    Original     		PDF -2604A HFA30PB120 120nC O-247AC HFA16PB120 Irf 1540 G HFA30PB120 IRFP250

    600V 25A Ultrafast Diode

    Abstract: 600v 10A ultra fast recovery diode HFA25PB60 IRFP250
    Text: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA25PB60 112nC HFA25PB60 600V 25A Ultrafast Diode 600v 10A ultra fast recovery diode IRFP250

    HFA04TB60

    Abstract: HFA08TA60C IRFP250
    Text: PD -2.601 HFA08TA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA08TA60C HFA08TA60C HFA04TB60 IRFP250

    600v 10A ultra fast recovery diode

    Abstract: 600V 25A Ultrafast Diode HFA25TB60 IRFP250
    Text: PD -2.339 HFA25TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA25TB60 112nC HFA25TB60 600v 10A ultra fast recovery diode 600V 25A Ultrafast Diode IRFP250

    Untitled

    Abstract: No abstract text available
    Text: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		PDF HFA15TB60 HFA15TB60 O-220AC

    HFA16TA60C

    Abstract: IRFP250
    Text: PD -2.342 HFA16TA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 65nC Benefits di rec M/dt * = 240A/µs


    Original     		PDF HFA16TA60C HFA16TA60C IRFP250

    5.5 volt 1.5 amp. smps

    Abstract: SML20EUZ03K diode 300v 20a 15A-42
    Text: SML20EUZ03K SEME LAB 2 D PAK Package Enhanced Ultrafast Recovery Diode 300 Volt, 20 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 20EUZ03K diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML20EUZ03K 20EUZ03K 5.5 volt 1.5 amp. smps SML20EUZ03K diode 300v 20a 15A-42

    SML20EUZ12K

    Abstract: No abstract text available
    Text: SML20EUZ12K SEME LAB 2 D PAK Package Enhanced Ultrafast Recovery Diode 1200 Volt, 20 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 20EUZ12K diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML20EUZ12K 20EUZ12K SML20EUZ12K