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    50V 1A POWER TRANSISTOR Search Results

    50V 1A POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    50V 1A POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking 12W SOT23

    Abstract: No abstract text available
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEV > -50V, V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


    Original     		ZXTP2025F ZXTN2031F marking 12W SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A


    Original     		DPLS350Y -180mV AEC-Q101 J-STD-020 DS31149 PDF

    ZXTP2025

    Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


    Original     		ZXTP2025F ZXTN2031F ZXTP2025 zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


    Original     		ZXTP2025F ZXTN2031F PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		ZXTN25050DFH PDF

    2SCR533P

    Abstract: No abstract text available
    Text: 2SCR533P Data Sheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A MPT3 Base Collector Emitter 2SCR533P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR533P 3) Low VCE(sat) VCE(sat)=0.35V Max. (IC/IB=1A/50mA)


    Original     		2SCR533P SC-62) OT-89> 2SAR533P A/50mA) R1102A 2SCR533P PDF

    zxtn25050dfhta

    Abstract: No abstract text available
    Text: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		ZXTN25050DFH zxtn25050dfhta PDF

    ZXTN25050DFH

    Abstract: ZXTN25050DFHTA
    Text: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		ZXTN25050DFH ZXTN25050DFH ZXTN25050DFHTA PDF

    marking 322

    Abstract: br 2222 npn
    Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to


    Original     		ZXTN2031F ZXTP2025F marking 322 br 2222 npn PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to


    Original     		ZXTN2031F ZXTP2025F PDF

    ZXTN2031FTA

    Abstract: ZXTN2031F ZXTP2025F mosfet marking 12W
    Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to


    Original     		ZXTN2031F ZXTP2025F ZXTN2031FTA ZXTN2031F ZXTP2025F mosfet marking 12W PDF

    MP2562DS

    Abstract: mp2562 marking c6 qfn10 2A90V 101X101 MP2562DQ
    Text: MP2562 1A, 4MHz, 50V Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP2562 is a high frequency step-down switching regulator with an integrated internal high-side high voltage power MOSFET. It provides 1A output with current mode control for


    Original     		MP2562 MP2562 MS-012, MP2562DS marking c6 qfn10 2A90V 101X101 MP2562DQ PDF

    2SAR513P

    Abstract: T100
    Text: Midium Power Transistors -50V / -1A 2SAR513P  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) 2) High speed switching


    Original     		2SAR513P -500mA -25mA) R0039A 2SAR513P T100 PDF

    MARKING PQ* SOT89

    Abstract: marking AG marking 3A sot-89 2SA1797 T100 SOT89 pq SOT89 Package pq
    Text: 2SA1797 Power Transistor -50V, -3A ʳ ϥFeatures 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797. ϥAbsolute maximum ratings (Ta=25°C) Parameter Symbol


    Original     		2SA1797 -50mA. 2SA1797. MARKING PQ* SOT89 marking AG marking 3A sot-89 2SA1797 T100 SOT89 pq SOT89 Package pq PDF

    T100

    Abstract: No abstract text available
    Text: Midium Power Transistors 50V / 3A 2SCR533P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 1A / 50mA) (1) 2) High speed switching  Applications


    Original     		2SCR533P R0039A T100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors -50V / -1A 2SAR513P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) (1) (2) (3) 2) High speed switching


    Original     		2SAR513P -500mA -25mA) R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors 50V / 1A 2SCR513P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) 2) High speed switching


    Original     		2SCR513P 500mA R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: Midium Power Transistors -50V / -3A 2SAR533P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching


    Original     		2SAR533P -50mA) R0039A PDF

    2SCR533P

    Abstract: No abstract text available
    Text: Midium Power Transistors 50V / 3A 2SCR533P  Dimensions (Unit : mm)  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching


    Original     		2SCR533P R0039A 2SCR533P PDF

    2SCR513P

    Abstract: T100
    Text: Midium Power Transistors 50V / 1A 2SCR513P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) (1) 2) High speed switching  Applications


    Original     		2SCR513P 500mA R0039A 2SCR513P T100 PDF

    2SC5053

    Abstract: 2SA1900 T100
    Text: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 (1)Base


    Original     		2SC5053 500mA/ 2SA1900 2SC5053 2SA1900 T100 PDF

    2SC5053

    Abstract: 2SA1900 T100
    Text: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3


    Original     		2SC5053 500mA/ 2SA1900 2SC5053 2SA1900 T100 PDF

    2SC5053

    Abstract: 2SA1900 T100
    Text: 2SC5053 Transistors Medium power transistor 50V, 1A 2SC5053 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA/ 50mA 2) PC=2W (on 40x40×0.7mm ceramic board) 3) Complements the 2SA1900 MPT3 1.5 2.5


    Original     		2SC5053 500mA/ 2SA1900 2SC5053 2SA1900 T100 PDF

    MP6X13

    Abstract: No abstract text available
    Text: Midium Power Transistors 50V / 3A MP6X13  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) (4) (5) (6) 2) High speed switching


    Original     		MP6X13 R1010A MP6X13 PDF