AD7S24
Abstract: B 1403 N circuit Diagram AD1403 RE30 AD1403A AD542 AD580 AD7524 B 1403 N adi403
Text: ANALOG DEVICES □ FEATU RES Improved, Lower Cost, Replacements for Standard 1 4 0 3 ,1403A 3-Terminal Device: Voltage In/Voltage Out Laser Trimmed to High Accuracy: 2.500V ±10mV AD1403A Excellent Temperature Stability: 25ppm/°C (AD1403A) Low Quiescent Current: 1.5mA max
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AD1403/AD1403A*
AD1403A)
25ppm/Â
AD1403
AD1403A
1300ppm/Â
40ppm/Â
AD1403)
AD7S24
B 1403 N circuit Diagram
RE30
AD542
AD580
AD7524
B 1403 N
adi403
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boonton 230A
Abstract: wound bifilar TLO 82 circuit degree ECG704 IF transformers 10.7 mhz AF 106 equivalent 34 awg copper wire
Text: bhSaTSa 0003250 0 ECG704 TV SOUND IF T * 1 1 - 0 “7 * 0 7 FEATURES & APPLIC ATIO N S! • exceptionally high gain: power gain at 4.5 M c/s — 75 dB typ . • excellent lim itin g characteristics input lim itin g voltage knee = 300 jiV typ« a t 4.5 M c/s
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ECG704
ECG704
boonton 230A
wound bifilar
TLO 82 circuit degree
IF transformers 10.7 mhz
AF 106 equivalent
34 awg copper wire
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TIM7179-30L
Abstract: PWBA TIB7179-30L
Text: I T O S H IB A M IC R O W A V E P O W E R G a A a FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM7179-30L ' FEATURES : • LOW INTERMODULATION DISTORTION IM S - - 4 3 dB c a t Po - 3 4 .5 dBm, Single Carrier level - HIGH POWER > HIGH GAIM GfclB — 6 .5 dB at 7.1 GHz to 7 . 9 GHz
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TIM7179-30L
VDS-10V
TIM7179-30L
PWBA
TIB7179-30L
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Untitled
Abstract: No abstract text available
Text: ^ litron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 3301 ELECTRONICS WAY • WEST PALM BEACH,FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • F A X. (407) 863-5946 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNI T S SYMBOL Drain-source Vo It.( 1 )
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di/dt-100A/
A32-1
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2SK1602
Abstract: DDS3327 TRANSISTOR GUIDE
Text: TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 602 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • 2SK1602 =10^7250 0 0 2 3 3 2 4 'ÌOR INDUSTRIAL APPLICATIONS
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2SK1602
20kfi)
50URCE
O-220FL
00E3b43
O-220SM
TDT725Q
D0EBb44
2SK1602
DDS3327
TRANSISTOR GUIDE
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 5 STP36N06 STP36N06FI M 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI ! Vdss R D S on I 60 V 60 V 0.04 Q 1 0 04 U Id 36 A 20 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STP36N06
STP36N06FI
O-220
ISOWATT220
89lraS
STP36N06/FI
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