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    KSC900

    Abstract: No abstract text available
    Text: I S AM S U N G SEMICONDUCTCR INC KSC900 i4E D | TlbMlME GOObflST 7 | 7 NPN EPITAXIAL SILICON T R A N SISlbR LOW FREQUENCY, LOW NOISE AMPLIFIER • CoJIector-Bas« Voltage Vc*o=30V • Low N o Im Level NL=50rrtV Max ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


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    PDF KSC900 lc-100/iA, T-29-17