A72Pq
Abstract: VARISTOR 275 L20 CORE F5A FC102 PME261KE6470 747I1330 63D14 1510AH SMR10105 SMPS 265
Text: Film Capacitors General Purpose, Pulse and DC Transient Suppression General Purpose, Pulse and DC Transient Suppression One world. One KEMET. Film Capacitors General Purpose, Pulse and DC Transient Suppression Table of Contents Page Why Choose KEMET. 3
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FC102
15bis
A72Pq
VARISTOR 275 L20
CORE F5A
FC102
PME261KE6470
747I1330
63D14
1510AH
SMR10105
SMPS 265
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A50ET4680
Abstract: capacitor 0.01 k 630 MKT A50MF IEC 61760-1 A50MT4100 A50EH A50IT4220 A50IH3100 50DK4330 A50IK3470
Text: General Purpose, Pulse and DC Transient Suppression A50 Series Metallized Polyester Film, Axial, 50 – 1,000 VDC Overview Applications The A50 Series is constructed of metallized wound polyester film and encapsulated in self-extinguishing material meeting the
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55/105/r
A50ET4680
capacitor 0.01 k 630 MKT
A50MF
IEC 61760-1
A50MT4100
A50EH
A50IT4220
A50IH3100
50DK4330
A50IK3470
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r76 mkp s6
Abstract: military passive component electronic passive components catalog Multilayer metallized paper F611DP335 PFR5221 594 BC varistor MKP R76 F611RD47 SMR10105
Text: Film Capacitors General Purpose, Pulse and DC Transient Suppression General Purpose, Pulse and DC Transient Suppression One world. One KEMET. Film Capacitors General Purpose, Pulse and DC Transient Suppression Table of Contents Page Why Choose KEMET. 3
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FC102
15bis
r76 mkp s6
military passive component
electronic passive components catalog
Multilayer metallized paper
F611DP335
PFR5221
594 BC varistor
MKP R76
F611RD47
SMR10105
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A50IH3100
Abstract: MKT 1000 pF axial a50ef3150
Text: General Purpose, Pulse and DC Transient Suppression A50 Series Metallized Polyester Film, Axial, 50 – 1,000 VDC Overview Applications The A50 Series is constructed of metallized wound polyester film and encapsulated in self-extinguishing material meeting the
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55/105/property
A50IH3100
MKT 1000 pF axial
a50ef3150
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Untitled
Abstract: No abstract text available
Text: SN54S140, SN74S140 DUAL 4-INPUT POSITIVE-NAND 50-QHM LINE DRIVERS DECEMBER 1983-REVISED MARCH 1988 Package Options Include Ceramic Chip Carriers and Flat Packages in Addition to Plastic and Ceramic DIPs S N 5 4 S 1 4 0 . . . J OR W P AC K A G E S N 7 4 S 1 4 0 . . . D OR N P AC K A G E
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SN54S140,
SN74S140
50-QHM
1983-REVISED
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c460 transistor
Abstract: WJ-A83-1 Transistor c460
Text: uuU A83-1 / SMA83-1 10 to 250 MHz TO -8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 35.5 dB TYP. LOW POWER DRAIN: 65 mW @ 5 VOLTS (TYP.) VOLTAGE CONTROLLED GAIN: 29 dB TO 39 dB @ Vcc = 3 TO 12 VOLTS ♦ LOW VSWR OVER FULL CONTROL RANGE: < 1.5:1 (TYP.)
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A83-1
SMA83-1
A83-1
1-800-WJ1-4401
c460 transistor
WJ-A83-1
Transistor c460
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WJ-A81-1
Abstract: SMA81-1 WJ-A81
Text: WJ-A81-1 /SMA81-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30.0 dB TYP. LOW NOISE: 2.5 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) HIGH EFFICIENCY: 25 mA @ +15 VDC (TYP.) \ • ' : *i * *. ' - ' a ' , ' . im* t :
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WJ-A81-1
/SMA81-1
A81-1
00071SÛ
SMA81-1
WJ-A81
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WJ-CA80-1
Abstract: WJ-A80 Transistor BC 227
Text: uuU A80-1 / SMA80-1 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >32 dB TYP. VERY LOW NOISE: 2.0 dB (TYP.) HIGH GAIN: 27.3 dB (TYP.) HIGH EFFICIENCY: 29 mA at 15 VOLTS (TYP.) Outline Drawings
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A80-1
SMA80-1
A80-1
1-800-WJ1-4401
WJ-CA80-1
WJ-A80
Transistor BC 227
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Untitled
Abstract: No abstract text available
Text: W J - A 7 6 1 S M A 7 6 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 28 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) HIGH THIRD ORDER I.P.: +28 dBm (TYP.) WIDE POWER SUPPLY RANGE: +8 T O +15 VOLTS
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wj 508
Abstract: 1-800-WJ1-4401
Text: uuU A3010 10 kHz to 2500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ GAIN: 9.5 dB TYP. DC COUPLED* +/- 1 dB GAIN FLATNESS HIGH DRIVER OUTPUT LEVEL: +18 dBm INPUT/OUTPUT MATCH: <2.0:1 (TYP.) Specifications* Outline Drawing Typical 0.010-2500 Guaranteed
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A3010
50-QHM
1-800-WJ1-4401
WJ-A3010
wj 508
1-800-WJ1-4401
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MC10123
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T rip le 4-3-3-Input B u s Driver M C10123 The MC10123 consists of three NOR gates designed for bus driving applications on card or between cards. Output low logic levels are specified with Vo l = -2-1 Vdc so that the bus may be terminated to -2.0 Vdc. The gate output,
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MC10123
25-ohm
50-ohm
MC10123,
DL122
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triple 4 -3 -3 -In p u t Bus Driver M C 10H 123 The MC10H123 is a triple 4-3-3-Input Bus Driver. The MC10H123 consists of three NOR gates designed for bus driving applications on card or between cards. Output low logic levels are specified with
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MC10H123
25-ohm
50-ohm
MC10H123
50-QHM
C10H123
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Untitled
Abstract: No abstract text available
Text: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. ASAK I KASE1 [AK2397]
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AK2397]
14-biI
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WJ-CA86-1
Abstract: a861
Text: W J - A 8 6 -1 / S M A 8 6 -1 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: TWO STAGES 28 dB TYP. LOW NOISE: 2.8 dB (TYP.) HIGH OUTPUT LEVEL: +16.0 dBm (TYP.) HIGH THIRD ORDER I.P.: +28 dBm (TYP.) Outline Drawings
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A86-1
50-QHM
WJ-CA86-1
a861
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ATIC 164 D2
Abstract: WJ-A66 WJ-CA66
Text: uuU A66-3 / SMA66-3 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 26.0 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Outline Drawings Specifications* Characteristics
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A66-3
SMA66-3
A66-3
1-800-WJ1
ATIC 164 D2
WJ-A66
WJ-CA66
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Untitled
Abstract: No abstract text available
Text: M O TO R O LA TRIPLE 4-3-3 INPUT BUS DRIVER L SUFFIX CERAMIC PACKAGE CASE 620 T h e M C 1 0 H 1 2 3 is a t r ip le 4 -3 -3 In p u t B u s D riv e r. T h e M C 1 0 H 1 2 3 c o n s is ts o f th re e NO R g a te s d e s ig n e d f o r b u s d r iv in g a p p lic a tio n s o n c a rd o r b e tw e e n c a rd s . O u tp u t lo w lo g ic
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MC10H123
50-QHM
25-OHM
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Untitled
Abstract: No abstract text available
Text: TYPES SN54S140, SN74S140 DUAL 4-INPUT POSITIVE-NAND 50-QHM LINE DRIVERS REVISED DECEMBER 1983 Package Options Include Both Plastic and Ceramic Chip Carriers in Addition to Plastic and Ceramic D IP s SN 54S140 . . . J OR W PACKAGE S N 7 4 S 1 4 0 . . D, J O R N P A C K A G E
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SN54S140,
SN74S140
50-QHM
54S140
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Untitled
Abstract: No abstract text available
Text: QUALITY and RELIABILITY 1. INTRODUCTION SEC has been providing a wide variety of semiconductor products to the world since 1974. Since this time, extensive in-sights have been gained to create methods which most effectively result In reliable products. The worldwide customers of SEC have
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old Resistors Siemens s
Abstract: characteristics of mixer circuit diagram 900MHZ PMB2333 S-11
Text: SIEM EN S Mixer/Amplifier PMB 2333 Preliminary Specification Bipolar 1C ~ Functional Description, Benefits: • New B6HF bipolar technology, 25G H z ft • Small outline T-SSO P 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver
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25GHz
12dBm
fl23Sb05
623SbQS
T-SSOP-16
fl23SbD5
old Resistors Siemens s
characteristics of mixer circuit diagram
900MHZ
PMB2333
S-11
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transistor c 5586
Abstract: 0103 MA WJ 73 transistor 5586 A0611 0103 MA WJ 64 CA0611 transistor BC 171
Text: uuU A0611 / SMA0611 5 to 600 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ LOW NOISE FIGURE: 3.2 dB TYP. ♦ HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc ♦ HIGH OUTPUT POWER: +12.5 dBm (TYP.) Outline Drawings Specifications* Characteristics
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A0611
SMA0611
1-800-WJ1-4401
transistor c 5586
0103 MA WJ 73
transistor 5586
0103 MA WJ 64
CA0611
transistor BC 171
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A0531
Abstract: TRANSISTOR BC 321 40468
Text: uuU A0531 / SMA0531 2 to 500 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN, TWO STAGES: 32 dB TYP. ♦ HIGH EFFICIENCY: 17 mA at +5 Vdc ♦ LOW NOISE FIGURE: 2.0 dB (TYP.) ♦ LOW POWER DRAIN: 85 mW at +5 Vdc Outline Drawings
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A0531
SMA0531
A0531
1-800-WJ1-4401
TRANSISTOR BC 321
40468
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WJ-A63
Abstract: bc 162 transistor Transistor BC 227 WJ-CA63 wjca63
Text: uuJ A63 / SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYP.) HIGH GAIN: 16 dB (TYR) • ¡■ B B lM g g » » miKKKtM Specifications* Characteristics Outline Drawings
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SMA63
1-800-WJ1-4401
WJ-A63
bc 162 transistor
Transistor BC 227
WJ-CA63
wjca63
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Untitled
Abstract: No abstract text available
Text: SIEMENS Mixer/Amplifier PMB 2333 Bipolar IC Preliminary Specification •- Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Small outline T-SSOP 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver
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25GHz
12dBm
T-SSOP-16
fl235b05
fi23StiQS
A23SbD5
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Untitled
Abstract: No abstract text available
Text: WJ-PA5 / SMPA5 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH THIRD ORDER IP.: +35 dBm TYP. HIGH OUTPUT POWER: +25 dBm (TYP.) LOW VSWR: < 1.5:1 (TYP.) OPERATION FROM +12 Vdc TO +15 Vdc : ;i-4* ¡ ¡ ¡ ¡ ill
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50-QHM
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