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    50LN 50SN Search Results

    50LN 50SN Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    DLP650LNIRFYL Texas Instruments DLP 0.65 NIR WXGA S450 DMD 149-CLGA 0 to 70 Visit Texas Instruments Buy
    BQ2050SN-D119 Texas Instruments Li-Ion Gas Gauge With 1-Wire (DQ) Interface And 5 LED Drivers 16-SOIC 0 to 70 Visit Texas Instruments Buy
    BQ2050SN-D119TR Texas Instruments Li-Ion Gas Gauge With 1-Wire (DQ) Interface And 5 LED Drivers 16-SOIC 0 to 70 Visit Texas Instruments Buy

    50LN 50SN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    opto fet

    Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
    Text: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers


    OCR Scan     		PDF P35-1110 0242A opto fet 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn

    marconi

    Abstract: No abstract text available
    Text: FEATURES ÂféO Ô EL NO. • General Purpose Amplifier In PIN FET Receiver Ï ^ # 8 6 -1 1 1 0 ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE ■ No Selection Required


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES MODEL NO. P35-1110 • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver GaAs MESFET For OPTO Receivers ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE


    OCR Scan     		PDF P35-1110 DDQ21

    GEC Marconi

    Abstract: marconi
    Text: & FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transim pedance Amplifier For W ide Band PIN FET Receiver ■ MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts


    OCR Scan     		PDF P35-1110 GEC Marconi marconi

    Untitled

    Abstract: No abstract text available
    Text: DAICO INDUSTRIES INC blE D • ZbDMTEO 0001fl3D *122 ■ DAI FEATURES ■ Transim pedance Amplifier For W ide Band PIN FE T Receiver ■ High Gm, Typically 45 mS ■ Low G ate Leakage Current, Typically 10nA At -5 Volts ■ No Selection Required ■ Low Cgs, Typically 0.4 pF


    OCR Scan     		PDF 0001fl3D P35-1110 D4T50

    X band attenuator

    Abstract: 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052
    Text: DAICO INDUSTRIES INC blE D • ZbDMTEO 0001fl3D *122 ■ DAI FEATURES ■ General Purpose Amplifier In PIN FET Receiver Clï ■ Transim pedance Amplifier For W ide Band PIN FE T Receiver ■ High Gm, Typically 45 mS ■ Low G ate Leakage Current, Typically 10nA At -5 Volts


    OCR Scan     		PDF 0001fl3D p35-1110 DS0990 DA0769 DA0996 X band attenuator 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052

    Untitled

    Abstract: No abstract text available
    Text: G E C-MARCONI MTLS LTD 25 3 7 b flS Q l QOOOD71 T • GML • PLESSEY T-3I-Z5 Three Five Product Information GaAs MESFET P35-1101 This New Generation M ESFET has been designed for improved performance and is ideally suited for: ■ J - j& a Applications •


    OCR Scan     		PDF QOOOD71 P35-1101

    Ablebond 36-2

    Abstract: Multicore Solders
    Text: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators


    OCR Scan     		PDF P35-1105 12GHz P35-1105-0 Ablebond 36-2 Multicore Solders