SG DIODE MARKING
Abstract: 2KV DIODE diode sg 45
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 5 M U nit : mm W eight 1.54g Typ w h jtH H W 15 0 V 2 0 A 4.5 Feature >Tj=150°C • Tj=150°C 1 High lo Rating » Full Molded 1 Low Ir=30|jA >7H Æ - J b K •ÎSIr=30|jA
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FTO-220G
50IIz
J533-1)
SG DIODE MARKING
2KV DIODE
diode sg 45
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SG10SC9M
Abstract: SG10SC9
Text: Schottky Barrier Diode Twin Diode OUTLINE SG10SC9M 90 V 10 A Feature • Tj=150t: • Tj=150°C • P rrsm T l K r j y i s x f ä M . • P r r s m Rating • Full Molded • Dielectric Strength 2kV •¡fg *» Œ 2kV SU Main Use • Switching Regulator • DC/DC Converter
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SG10SC9M
251/unless
J533-1)
SG10SC9M
SG10SC9
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 4 0 T C 1 OM Unit : mm W eight 1.54g Typ n y H B -ë -(M ) 10 0 V 4 0 A 4.5 Feature >Tj=150°C ' Tj=150°C >37JLÆ-JL/ K ' Full Molded 1 Low Ir=60|jA 1 Resistance for thermal run-away
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FTO-220G
SG40TC10M
50IIz
J533-1
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ftt semi power
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT0220G S G 20T C 1 2 M Unit : mm W eight 1.54g Typ nyHB-ë-(M) 120V 20A 4.5 Feature > T j= 1 7 5 ° C ' Tj=175°C >3 7 J L Æ - J L / K ' Full Molded •ÎSIr=30|j A > S & I Ü î è £ ï 2 c I U IC
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FT0220G
J533-1)
SG20TC12M
50IIz
J533-1
ftt semi power
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SG30TC
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away
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SG30TC
FTO-220G
J533-1)
SG30TC15M
50IIz
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode SG40TC12M diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away
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FTO-220G
SG40TC12M
J533-1)
50IIz
J533-1
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
SG40TC12M
diode marking jb
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Diodo CV
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE S30NC15 150V 30A : Feature • V f=0.88V • <SlR=0.5mA • Low V f=0.88V • Low lR=0.5mA • Resistance for thermal run-away • æ n iÆ Ç ie c iu c < IA Unit : mm Weight 6.1g Typ> P a c k a g e I M T O -3 P
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S30NC15
J533-1
Diodo CV
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J533
Abstract: S3L60 fly wheel J533-1
Text: Super Fast Recovery Diode Axial Diode OUTLINE S3L60 Unit : mm Package : AX14 W eight l.OÓRÍTyp 6 0 0 V 2 .2 A Feature 26.5 • r a M ± FRD • High Voltage Super FRD •ñ S 'í X • Low Noise • trr=50ns • trr=50ns MA 26.5 -L i. N * KtflliAiKliSM
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S3L60
S3L60
J533-1
J533
fly wheel
J533-1
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D2L DIODE
Abstract: 2L20U D2L20U AX078
Text: Super Fast Recovery Diode Axial Diode O U T L IN E D2L20U Unit : mm Weight 0.38g Typ Package I AX078 2 0 0 V 1.5A 2 ' 27.5 Feature • s v -r x • Low Noise • trr=35ns • tnr=35ns Main Use ñ |< R 0 * iütflJifiürtlîlllsl M arking • Fly Wheel D 2L 2 4
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D2L20U
AX078
2L20U
-40ower
110ms
li50Hz
CJ533-1
D2L DIODE
D2L20U
AX078
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DFC15T
Abstract: DFC15TB DFC15TC DFC15TE DFC15TG DFC15TJ DFC15TL DFC15TN DFC15TR
Text: Ordering numberEN2375 D F C15T No.2375 Diffused Junction Type Silicon Diode 1.5A Power Rectifier F e a tu r e s • High-speed sw itching use • Plastic molded stru ctu re • Reverse recovery tim e trr = 0.15psm ax B ,C ,E,G trr = 0.3ps m ax (J,L,N,R)
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numberEN2375
DFC15T
DFC15TB
DFC15TC
DFC15TE
DFC15TG
DFC15TJ
DFC15TL
DFC15TN
DFC15TR
DFC15T
DFC15TB
DFC15TJ
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CXA1145P
Abstract: CXA1145M sony ilx CXA1145 SONY 171 B100 H287BSJS
Text: CXA1145P/M SONY R G B x > u - y CXA1145P C X A 1 1 4 5 P / M x * tá V c ¿ r ^ o ^ R G B Í . í - v j - 3 £*->=* — P'fto ^ ft l í y ^ h t" 3 X ft't-: M iß k \k & L X ^ i t o ) - r r , •y h / > n r t D 3 >^ ^ ^'RGBir;-'/ £* A ;/j t s K 11r 3 >
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CXA1145P/M
CXA1145P
CXA1145M
24pin
400-A
300mi
sony ilx
CXA1145
SONY 171
B100
H287BSJS
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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D 92 M 03 DIODE
Abstract: D 92 M - 03 DIODE marking WM diode
Text: Schottky Barrier Diode Twin Diode mtmm o u t lin e S G 10T C 1 5 M 150 V 10A Feature • Tj=175°C • Tj=175°C • 7 J b = E -J b K •ÎS I r=15|jA • Full Molded • Low Ir=15|jA • Resistance for thermal run-away Main Use • y -h P C .L C D Ç -^ i
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J533-1)
SG10TC15M
50IIz
D 92 M 03 DIODE
D 92 M - 03 DIODE
marking WM diode
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT 0220G SG30TC 12M Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 30A 4.5 Feature ' Tj=175°C ' Full Molded 1Low Ir=40|jA 1Resistance for thermal run-away > Tj=175°C >37JLÆ-JL/ K » Ir=40|j A
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SG30TC
0220G
SG30TC12M
50IIz
J533-1
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S30SC4MT
Abstract: DIODE UF marking code
Text: Schottky Barrier Diode Twin Diode OUTLINE S30SC4MT Unit : mm Package I MTO-3PT Weight 52g Typ 40V 30A Feature • T j= i5 ( r c • Tj=150°C • P r r s m P K t? • P rrsm Rating • 9 jCÖtyJvSU' • Small 8 jc • High lo Rating • 7 • • • •
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S30SC4MT
15ffC
CJ533-1
S30SC4MT
DIODE UF marking code
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cd 1191
Abstract: DBF60 DBF60C DBF60G
Text: Ordering num ber: EN2799A _ DBF60 Silicon Diffused J u n c tio n Type 6.0A Single-Phase Bridge Rectifier F eatu res •Glass passivation for high reliability. • P lastic molded structure. • Peak reverse voltage : V rm —200, 600V. • Average rectified c u r r e n t : I q = 6.0A.
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EN2799A
DBF60
DBF60C
DBF60G
cd 1191
DBF60
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STK4231
Abstract: STK4231II STK4231II power amplifier stereo STK4231 for power supply 8Q transistor 8c 617 transistor STK4231 II DBA40C MG-200 STK4201II
Text: Ordering number: EN 2307 Thick Film Hybrid IC S T K 4 2 3 1 II 2-Channel 100W min AF Power Amp Dual Supplies Features • The STK4201II series (STK4231II) and STK4201V series (high-grade type) are pin-compatible in the output range of 60W to 100W. Once the PCB pattern is designed, you can easily satisfy the require
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STK4231II
STK4201II
STK4231II)
STK4201V
STK4231
STK4231II
STK4231II power amplifier stereo
STK4231 for power supply
8Q transistor
8c 617 transistor
STK4231 II
DBA40C
MG-200
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DSA20T
Abstract: DSA20TB DSA20TC DSA20TE DSA20TG DSA20TJ DSA20TL
Text: Ordering number :EN2408 _ D S A 2 0 T No.2408 Diffused Junction Type Silicon Diode 2.0A Power Rectifier Junction Tem perature Storage T em perature II P eak Reverse Voltage V rm Average Rectified C urrent Io Surge Forward C urrent Ifsm rfsoo o a t Ta - 25°C
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EN2408
DSA20T
DSA20TB
DSA20TC
DSA20TE
50Hzsine
DSA20TG
DSA20TJ
DSA20TL
DSA20T
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SC6433
Abstract: 25mpf
Text: -v I fPS UPC NIPPON PRECISION CIRCUITS LTD ( . J f y 006803 > SC6433 ca , - B W T V C a m e r a s y n c p u ls e G e n e ra to r DESCRIPTION The SC6433 is a Black and White TV (BWTV Camera sync pulse generator that produces the necessary output for synchronizing BWTV Camera information. These outputs includes Horizontal Drive, Vertical Drive, Composite Sync,
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SC6433
170EIA
25mpf
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CXA1145M
Abstract: CXA1145P CXA1145M "pin compatible" CXA1145 CXA1145P circuit XA11-4 XA114 1145P CXA1146P H28-7B
Text: S3S53S3 0005301 OSfc « S O N Y CXA1145P/M SO N Y RGB Encoder Description The C X A 1 148P/M encoder converts an ana log RGB signal to a composite video signal. With Its built-in circuit various pubes required for an encoder, composite video outputs ere ob
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S3S53S3
148P/M
CXA1145P/M
CXA1146P
CXA1145M
CXA1145P
CXA1145M "pin compatible"
CXA1145
CXA1145P circuit
XA11-4
XA114
1145P
H28-7B
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10TC15M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT0220G S G 10T C 1 5 M Unit : mm Weight 1.54g Typ 4.5 150 V 10A Feature >Tj=150°C ' Tj=150°C ><SIr=15m A 1 Low Ir=15|jA 1 Resistance for thermal run-away >37JLÆ-JL/ K ' Full Molded L IC < 1 1
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FT0220G
J533-1)
SG10TC15M
50IIz
10TC15M
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SG30TC10M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG30TC1OM o u t lin e Unit : mm Package : FTO-220G o -y H d ^ W 100V 30A 4.5 Feature • Tj=175°C • • • Tj=175°C • Full Molded K • Low Ir=40|jA • Resistance for thermal run-away Ir = 4 0 | j A Main Use
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SG30TC1OM
FTO-220G
J533-1)
SG30TC10M
50IIz
J533-1
SG30TC10M
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . SG40TC12M o u tlin e Package ! FT 0220G Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 40A 4.5 Feature > T j= 1 7 5 °C ' T j= 17 5°C >3 7 JL Æ -JL / K ' Full M o ld ed • Î Ë I r =60| j A 1 L o w Ir =60| j A
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0220G
SG40TC12M
50IIz
J533-1
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140T diode
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 OM Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 10 0 V 2 0 A 4.5 Feature ' Tj=150°C ' Full Molded 1Low Ir=30|jA 1Resistance for thermal run-away 1Dielectric Strength 2kV >Tj=150°C
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FTO-220G
Tc-10
50IIz
140T diode
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