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    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		PDF CGHV27030S CGHV27030S CGHV27

    transistor smd 1p8

    Abstract: No abstract text available
    Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications


    Original     		PDF CGHV27030S CGHV27030S CGHV27 transistor smd 1p8