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    nec 2035

    Abstract: bias NESG2031M05
    Text: NONLINEAR MODEL NESG2031M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2031M05 CCB 0.01 pF IS 1.593e-15 MJC 0.125


    Original     		PDF NESG2031M05 593e-15 86e-3 45e-15 46e-3 77e-18 50e-3 642e-15 751e-3 06e-3 nec 2035 bias NESG2031M05

    BJT BF 331

    Abstract: BF 331 50e3
    Text: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108


    Original     		PDF NESG2021M05 429e-15 31e-3 324e-15 09e-3 100e-18 50e-3 9e-15 4e-15 4e-12 BJT BF 331 BF 331 50e3

    transistor NPN C124

    Abstract: transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205
    Text: * OPA660X2 = MDB + MDT + MBC OPERATIONAL TRANSCONDUCTANCE AMPLIFIER * AND BUFFER COMPLEX MACROMODEL VERSION * CREATED 8/92 KL * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


    Original     		PDF OPA660X2 272E-3 67E-3 248E-20 040E-18 683E-3 029E-12 017E-12 050E-12 80E-12 transistor NPN C124 transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205

    EWM 1000

    Abstract: 902750 902950 EWM-900-FDTC-HS pll 564 EWM-900-FDTC-BS 50E3 wireless audio transmitter receiver schematic PLL FSK DEMODULATOR 9600 baud pll 564 schematic
    Text: EWM-900-FDTC Designed for Voice and Data Applications 1000 foot operating range is possible -109 dBm Sensitivity 12dB SINAD 19.2K Baud Data Rate 56 Channels Full-Duplex Operation Low-Cost 902-928MHz Full-Duplex Audio/Data Transceiver The EWM-900-FDTC is ideal for unlicensed voice and data applications. The transceiver module requires no external RF components


    Original     		PDF EWM-900-FDTC 902-928MHz EWM-900-FDTC EWM 1000 902750 902950 EWM-900-FDTC-HS pll 564 EWM-900-FDTC-BS 50E3 wireless audio transmitter receiver schematic PLL FSK DEMODULATOR 9600 baud pll 564 schematic

    transistor nec 8772

    Abstract: nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor bias NESG2031M05 NESG2031M05
    Text: NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz


    Original     		PDF NESG2031M05 OT-343 NESG2031M05 642e-15 751e-3 06e-3 4e-15 transistor nec 8772 nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor bias NESG2031M05

    stm8l

    Abstract: STM8L I2C Example STM8L10x STM8L ADC stm8l dma STM8L15x 50D5 AN3139 STM8l touch STM8L cpu programming manual
    Text: AN3139 Application note Migration and compatibility guidelines for STM8L microcontroller applications Introduction For designers of STM8L microcontroller applications, it is important to be able to replace easily one microcontroller type by another one in the same product family. Migrating an


    Original     		PDF AN3139 stm8l STM8L I2C Example STM8L10x STM8L ADC stm8l dma STM8L15x 50D5 AN3139 STM8l touch STM8L cpu programming manual

    Ic 9148

    Abstract: c 4468 power transistor npn 4722 IC 4468 NEC 9736
    Text: DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz


    Original     		PDF NESG2021M05 OT-343 Ic 9148 c 4468 power transistor npn 4722 IC 4468 NEC 9736

    transistor nec 8772

    Abstract: nec 8772 transistor BR 8772 MJE 15004 transistor transistor BR 8772 NESG2031M05 MJE 4302 NESG2031M05-T1 NESG2031M05-T1-A S21E
    Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:


    Original     		PDF NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 nec 8772 transistor BR 8772 MJE 15004 transistor transistor BR 8772 MJE 4302 NESG2031M05-T1 NESG2031M05-T1-A S21E

    transistor nec 8772

    Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
    Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:


    Original     		PDF NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor

    bf 331

    Abstract: ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002
    Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz


    Original     		PDF NESG2021M05 OT-343 NESG2021M05 9e-15 4e-15 bf 331 ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002

    bf 331

    Abstract: bf331 NESG2021M05 NESG2021M05-T1-A S21E ic MAX 8997
    Text: DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz


    Original     		PDF NESG2021M05 OT-343 NESG2021M05 bf 331 bf331 NESG2021M05-T1-A S21E ic MAX 8997

    DEMODULATOR CLOCK VCO

    Abstract: No abstract text available
    Text: Data Sheet, Version 1.0, 2006-12-12 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2006-12-12 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 12/12/06.


    Original     		PDF TDA5252 915MHz D-85579 DEMODULATOR CLOCK VCO

    EvalBoard

    Abstract: TDA5252 lna vco mixer quadrature 2GHz pll fsk MODULATOR 50E3 TDA5250 TDA5255 300mhz demodulator dip fsk CV182 receiver tda 1072
    Text: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.


    Original     		PDF TDA5252 915MHz D-85579 EvalBoard lna vco mixer quadrature 2GHz pll fsk MODULATOR 50E3 TDA5250 TDA5255 300mhz demodulator dip fsk CV182 receiver tda 1072

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.


    Original     		PDF TDA5252 915MHz D-85579

    Untitled

    Abstract: No abstract text available
    Text: ► Closed-Loop High Speed Buffer AN A LO G D E V IC E S FEATURES Bandwidth —110 MHz Slew Rate —3000 V / jjis Low Offset Voltage - < 1 m V Very Low Noise - < 4 n V /V H z Low Supply Current — 8.5 mA Mux Wide Supply Range - ± 5 to ±15 V Drives Capacitive Loads


    OCR Scan     		PDF BUF03 BUF04 759E-15 365E3 8E-12 20E-12 BUF04

    DS 25AT

    Abstract: No abstract text available
    Text: RFF70N06 P HHARRIS W S E M I C O N D U C T O R 25At, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET D e ce m b e r 1995 Features Package • 25A+, 60V JE D EC TO -254A A • rDS ON = 0.025i2 GATE • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFF70N06 -254A 025i2 DS 25AT

    Untitled

    Abstract: No abstract text available
    Text: Closed-Loop High Speed Buffer BUF04* ANALOG DEVICES FEATURES Bandwidth - 110 MHz Slew Rate - 3000 V/ jis Low Offset V oltage - <1 mV Very Low Noise - < 4 nV/VHz Low Supply Current - 8.5 mA Mux W ide Supply Range - ± 5 V to ± 1 5 V Drives Capacitive Loads


    OCR Scan     		PDF BUF04* BUF03 BUF04

    M766

    Abstract: el7661c
    Text: EL7661C F e a tu r e s G e n e r a l D e s c r ip t io n • • • • • • • • • • • • T he EL7661 provides a low cost solution to m any full bridge applications. T h e EL7661 is D C coupled so th a t th ere are no s ta rt up problem s associated w ith AC coupled schemes. A single


    OCR Scan     		PDF EL7661C EL7661 M766 el7661c

    Full Bridge Driver

    Abstract: m7661
    Text: EL7661C C lf llltB C EL7661C HlCH PÇ3FCRMANCE ANALÆG INTEGRATED CiRCjiTS 100V Full BiFldffC DTIVBT F e a tu re s G en era l D e sc r ip tio n • • • • • • • • • • • • The EL7661 provides a low cost solution to m any full bridge applications. The EL7661 is DC coupled so that there are no


    OCR Scan     		PDF EL7661C EL7661 Full Bridge Driver m7661

    7661 DC/DC

    Abstract: M766 3 phase inverter 180 conduction mode theory mosfet igbt drivers theory EL7661 EL7661CN QCX0002 QCX000J
    Text: EL7661C C lf llltB C EL7661C HlCH PÇ3FCRMANCE ANALÆG INTEGRATED CiRCjiTS 100V Full BiFldffC DTIVBT F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • • • • • • The EL7661 provides a low cost solution to m any full bridge


    OCR Scan     		PDF EL7661CN 18-Pin MDP0031 EL7661 3121S57 7661 DC/DC M766 3 phase inverter 180 conduction mode theory mosfet igbt drivers theory QCX0002 QCX000J

    48T18

    Abstract: m4t18 AI01024 T1A12
    Text: M48T08 * 7 # . mn»giLiiemM i(gi_ M48T18 r r z S C S -T H O M S O N 64Kb (8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		PDF M48T08 M48T18 M48T08: M48T18: 28-LEAD M48T08, 48T18 m4t18 AI01024 T1A12

    48T18

    Abstract: No abstract text available
    Text: M 48T08 M 48T18 / I T S G S -T H O M S O N * 7 /. M < g ü æ J M M O Ê i CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCKandPOWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		PDF 48T08 48T18 M48T08 M48T18 7TSTS37 M48T08, M48T18 48T18

    MK48T08

    Abstract: M48T08 SGS MK48T08 M48T18 SOH28 ZJA10 al00962 SGS M48T18
    Text: 57. S G S -T H O M S O N « S M lilL iíM M iM íg S M 48T08 M 48T18 CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCKand POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    OCR Scan     		PDF M48T08 M48T18 M48T18 7T2T23? M48T08, MK48T08 SGS MK48T08 SOH28 ZJA10 al00962 SGS M48T18

    M48T18

    Abstract: M48T06 DS1643 M48T08 SOH28 st 9431 ST M48T18
    Text: w , SGS-THOMSON M 48T08 M 48T 18 k7 # » RitlDÊlM IlilLIKËinSM QtÊS 6 4 K 8 K x 8 TIMEKEEPER INTEGRATED ULTRA LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		PDF M48T08 M48T18 M48T08: M48T18: SOH28 M48T06, M48T18 M48T06 DS1643 SOH28 st 9431 ST M48T18