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    50N80Q2 Price and Stock

    IXYS Corporation IXFN50N80Q2

    MOSFET N-CH 800V 50A SOT-227B
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    DigiKey IXFN50N80Q2 Tube 300
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    IXYS Corporation IXFB50N80Q2

    MOSFET N-CH 800V 50A PLUS264
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    50N80Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    50n80

    Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    50N80Q2 264TM 728B1 50n80 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q PDF

    50n80

    Abstract: 50N80Q2 IXFN50N80Q2
    Text: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original
    50N80Q2 OT-227 E153432 728B1 123B1 728B1 065B1 50n80 50N80Q2 IXFN50N80Q2 PDF

    IXFB

    Abstract: 50N80Q2 IXFB50N80Q2 50n80
    Text: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    50N80Q2 264TM IXFB 50N80Q2 IXFB50N80Q2 50n80 PDF

    50N80Q2

    Abstract: IXFB50N80Q2 264TM
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    50N80Q2 264TM 150imited 728B1 50N80Q2 IXFB50N80Q2 264TM PDF

    50N80Q2

    Abstract: IXFN50N80Q2
    Text: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


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    50N80Q2 OT-227 E153432 50N80Q2 IXFN50N80Q2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    50N80Q2 264TM 728B1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF