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    5082-2835 DIODE Search Results

    5082-2835 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    5082-2835 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5082-2804

    Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for


    Original     		340mV. 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 5082-28xx T25/1N57xx 5082-2804 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D PDF

    UHF/VHF

    Abstract: No abstract text available
    Text: 5082-2835 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2835 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 20 mA V 8.0 V PDISS


    Original     		PDF

    5082-2835

    Abstract: 5082-2835 diode
    Text: 5082-2835 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2835 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 20 mA V 8.0 V PDISS


    Original     		PDF

    5082-2800

    Abstract: 1N5712 5082-2811 diode 5082-2800 datasheet 1n5711 equivalent 1N5711
    Text: General Purpose Glass Schottky Diodes Typical Specifications @ 25°C Case Temperature Part Number Vbr (V) Vf @ 1 mA (mV) Ct (pF) Ir (nA) Page 5082-2800 (1N5711) 5082-2810 (1N5712) 5082-2811 5082-2835 70 20 15 8 410 410 (550) 410 340 2.0 1.2 1.2 1.0 200 @ 50 V


    Original     		1N5711) 1N5712) 5082-2800 1N5712 5082-2811 diode 5082-2800 datasheet 1n5711 equivalent 1N5711 PDF

    1N5711, 5082-2800

    Abstract: No abstract text available
    Text: 1N5711, 5082-2800 1N5712, 5082-2810/11 5082-2835 Avago Technologies Glass Package RF Schottky Diodes Reliability Data Sheet Description The following cumulative test results have been obtained from testing performed at Avago Technologies. For the purpose of this reliability data sheet, a failure is


    Original     		1N5711, 1N5712, Y2116 axes116 Hermeticity1017 minimum176 Atmosphere104110 DOD-HDBK-1686 5082-28xx 5988-3940EN 1N5711, 5082-2800 PDF

    1N5712

    Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring


    Original     		5082-28xx 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 T25/1N57xx 1N5712 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice PDF

    1N5712 spice

    Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented


    Original     		1N5711 1N5711 1N5712 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 spice 1N5711 spice 5082-2804 2800-Series 5082-2811 RS-296-D PDF

    diode t25 13 Go

    Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
    Text: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in


    Original     		1N5711, 1N5712, 1N5712 5082-28xx T25/1N57xx 1N57xx 5082-28xx/ diode t25 13 Go 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811 PDF

    diode hp 2835 schottky

    Abstract: diode hp 2800 hp2811 5966-0930E diode hp 2811 1N5711 1N5712 IN5712 RS-296-D 1N5712 spice
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		1N5711, 1N5712, 1N5711 1N5712 5966-0930E 5967-5767E diode hp 2835 schottky diode hp 2800 hp2811 5966-0930E diode hp 2811 1N5711 1N5712 IN5712 RS-296-D 1N5712 spice PDF

    diode 5082-3080

    Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		1N5711, 1N5712, 1N5711 1N5712 5082-xxxx 5082-xxxx 5968-4304E diode 5082-3080 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711 PDF

    IR 10e

    Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		1N5711, 1N5712, 1N5711 1N5712 5082-XXXX IR 10e HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800 PDF

    5082-2970

    Abstract: 1N5711 spice 5082-2805 in5712 5082-2804 5082-2912 HP2.811 5082-2800 5082-2835 1N5712
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		1N5711, 1N5712, 1N5711 1N5712 5082-XXXX 5082-2970 1N5711 spice 5082-2805 in5712 5082-2804 5082-2912 HP2.811 5082-2800 5082-2835 1N5712 PDF

    HP 5082-2835

    Abstract: HP 5082-2810 HP 2835 diode hp 2800 diode hp 5082- 2080 HP 5082-2900 HP 2804 HP 5082-2800 1N5711 spice in5712
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		1N5711, 1N5712, 1N5711 1N5712 5967-5767E 5968-4304E HP 5082-2835 HP 5082-2810 HP 2835 diode hp 2800 diode hp 5082- 2080 HP 5082-2900 HP 2804 HP 5082-2800 1N5711 spice in5712 PDF

    IR 10e

    Abstract: 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
    Text: Agilent 1N5711, 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a


    Original     		1N5711, 1N5712, 5082-28xx/ 1N57xx 5968-7181E 5989-3338EN IR 10e 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D PDF

    TXVB-2835

    Abstract: 7 inches tablet TX-2835 TXB-2835 TXV-2835 "5082-2835" 041 germanium DIODE
    Text: HEWLETT-PACKARDn cnpnts hoe 44475Ö4 d OOOSb?11] S □ HIGH RELIABILITY SCHOTTKY SWITCHING DIODES HEW LETT PACKARD TX-2835 TXV-2835 TXB-2835 TXVB-2835 Generic 5082-2835 Features SUITABLE FOR S P A C E APPLICATIONS 0.41 (0.016f 0.36 [0514) LOW TURN-ON V O LT A G E


    OCR Scan     		G00Sb7c] MIL-S-19500 TX-2835 TXVB-2835 7 inches tablet TXB-2835 TXV-2835 "5082-2835" 041 germanium DIODE PDF

    5082-2815

    Abstract: 5082-2370 1n5712 5082-2813 150 AVP 5082-2800 diode 5082-2800 1N5711 5082-2811
    Text: Ihp% 1"KM Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/


    OCR Scan     		1N5711, JAN1N5711/TX/TXV 1N5712 JAN1N5712/TX/TXV 1N5711 5082-2815 5082-2370 5082-2813 150 AVP 5082-2800 diode 5082-2800 5082-2811 PDF

    diode hpa 2800

    Abstract: 5082-2815 1N5712 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301
    Text: HEWLETT-PACKARD/ CMPNTS blE D • 4447564 QQOIbeb 7ST * H P A Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V


    OCR Scan     		1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 1N5711 1N5712 diode hpa 2800 5082-2815 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301 PDF

    5082-2815

    Abstract: 5082-2970 diode hp 2835 schottky 5082-2997 5082-2813 5082-2912 diode hp 2811 diode 5082-1001 diode 5082-1002 1N5712
    Text: W K3Ì HEWLETT lb"HM PACKARD Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics


    OCR Scan     		1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 1N5711 1N5712 5082-IIB -i-1750C 5082-2815 5082-2970 diode hp 2835 schottky 5082-2997 5082-2813 5082-2912 diode hp 2811 diode 5082-1001 diode 5082-1002 PDF

    5082-2815

    Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
    Text: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*


    OCR Scan     		1N5711* 1N5712* HSCH-1001 1N6263I* 1N5711, 1N5712, 1N5711 1N5711) 5082-2815 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805 PDF

    5082-2815

    Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
    Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		0005fc 1N5711 1N5712 1N5711, 1N5712, i712- 1n57h 1n5712 5082-2815 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912 PDF

    diode hp 2835 schottky

    Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
    Text: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available


    OCR Scan     		1N5711 1N5712 5082-XXXX 5965-8844E 5966-0930E diode hp 2835 schottky diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 PDF

    5082-2815

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815 PDF

    5082-2811

    Abstract: No abstract text available
    Text: warn H EW L E T T m¡3¡M PA CK A R D Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 niA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics


    OCR Scan     		1N5711 1N5712 5082-XXXX 5082-2811 PDF

    HSMS-0002

    Abstract: HSMS-0003 5082-0024 5082-0087 5082-2713 5082-0097
    Text: HÉULETT-PACKARDn C MP N T S HEWLETT PACKARD 5 OE D 4H475A4 SCHOTTKY BARRIER CHIPS FOR HYBRID INTEGRATED CIRCUITS OOOSSTf l 5082-0009 5082-0013 5082-0023 5082-0024 5082-0029 5082-0041 5082-0087 5082-0097 S 5082-9891 HS MS-0001 HSMS-0011 HSMS-0002 HSMS-0012


    OCR Scan     		4H475A4 MS-0001 HSMS-0011 HSMS-0002 HSMS-0012 HSMS-0003 HSMS-0013 HSMS-00XX approximately280 5082-0024 5082-0087 5082-2713 5082-0097 PDF