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Micro Commercial Components SR506-AP Interface
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SR506-AP	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	SR506-AP					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments MPC506AP IC MUX 16:1 1.5KOHM 28DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPC506AP	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	MPC506AP		24,033		1	1 $8.79 10 $8.79 100 $8.26 1000 $7.47 10000 $7.47	Buy Now
Micro Commercial Components FR506-AP DIODE GEN PURP 800V 5A DO201AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FR506-AP	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc T5750-6AP RF TX IC ASK 868-928MHZ 8TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T5750-6AP	Reel			500	1 - 10 - 100 - 1000 $1.83562 10000 $1.64864	Buy Now
Texas Instruments MPC506APG4 IC MUX 16:1 1.5KOHM 28DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPC506APG4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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506AP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet rqa 130 Abstract: 6pin 2x2 dfn 506AP 2x2 dfn wdfn6 ladder network thermal Text: AND8380/D WDFN6 2x2 mCool] 506AP Single MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com APPLICATION NOTE Prepared by: Anthony M. Volpe ON Semiconductor Introduction the contact area of the exposed source to include Pin 4	Original	AND8380/D 506AP 506AP mosfet rqa 130 6pin 2x2 dfn 2x2 dfn wdfn6 ladder network thermal	PDF
506AP Abstract: No abstract text available Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B DATE 26 APR 2006 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM	Original	506AP-01 506AP 506AP	PDF
506AP Abstract: NTLJS3113P NTLJS3113PT1G Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package	Original	NTLJS3113P SC-88 NTLJS3113P/D 506AP NTLJS3113P NTLJS3113PT1G	PDF
506AP Abstract: tl 72 oz NTLJS1102PTAG NTLJS1102PTBG Text: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate	Original	NTLJS1102P SC-88 NTLJS1102P/D 506AP tl 72 oz NTLJS1102PTAG NTLJS1102PTBG	PDF
506AP Abstract: NTLJS4149PTAG NTLJS4149PTBG Text: NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package with Exposed Drain Pad for Excellent Thermal http://onsemi.com Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLow Profile < 0.8 mm for Easy Fit in Thin Environments	Original	NTLJS4149P SC-88 NTLJS4149P/D 506AP NTLJS4149PTAG NTLJS4149PTBG	PDF
Untitled Abstract: No abstract text available Text: NSS40200UW6T1G, NSV40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These	Original	NSS40200UW6T1G, NSV40200UW6T1G NSS40200UW6/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package	Original	NTLJS4114N SC-88 NTLJS4114N/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS4114N Product Preview Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features http://onsemi.com • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 • Lowest RDS on in 2x2 mm Package	Original	NTLJS4114N SC-88 NTLJS4114N/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLow Profile < 0.8 mm for Easy Fit in Thin Environments	Original	NTLJS2103P SC-88 NTLJS2103P/D	PDF
506AP Abstract: NTLJS2103PTAG NTLJS2103PTBG Text: NTLJS2103P Power MOSFET −12 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package	Original	NTLJS2103P SC-88 NTLJS2103P/D 506AP NTLJS2103PTAG NTLJS2103PTBG	PDF
506AP Abstract: NTLJS4159N NTLJS4159NT1G Text: NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package	Original	NTLJS4159N SC-88 NTLJS4159N/D 506AP NTLJS4159N NTLJS4159NT1G	PDF
Untitled Abstract: No abstract text available Text: NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLowest RDS on Solution in 2x2 mm Package	Original	NTLJS2103P SC-88 NTLJS2103P/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package with Exposed Drain Pad for Excellent Thermal http://onsemi.com Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLow Profile < 0.8 mm for Easy Fit in Thin Environments	Original	NTLJS4149P SC-88 NTLJS4149P/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package	Original	NTLJS3113P NTLUS3A40P SC-88 NTLJS3113P/D	PDF

506AP Abstract: NTLJS4114N NTLJS4114NT1G Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package	Original	NTLJS4114N SC-88 NTLJS4114N/D 506AP NTLJS4114N NTLJS4114NT1G	PDF
Untitled Abstract: No abstract text available Text: NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package	Original	NTLJS4159N NTLJS4159N/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package	Original	NTLJS3113P NTLUS3A40P NTLJS3113P/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package	Original	NTLJS4114N SC-88 NTLJS4114N/D	PDF
506AP Abstract: NSS40200UW6T1G Text: NSS40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications	Original	NSS40200UW6T1G NSS40200UW6/D 506AP NSS40200UW6T1G	PDF
Untitled Abstract: No abstract text available Text: NTLJS1102P Advance Information Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features http://onsemi.com • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package	Original	NTLJS1102P SC-88 NTLJS1102P/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate	Original	NTLJS1102P NTLJS1102P/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on in 2x2 mm Package	Original	NTLJS4114N NTLJS4114N/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS2103P Power MOSFET −12 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package	Original	NTLJS2103P NTLUS3A40P NTLJS2103P/D	PDF
Untitled Abstract: No abstract text available Text: NTLJS2103P Power MOSFET −12 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package	Original	NTLJS2103P NTLUS3A40P SC-88 NTLJS2103P/D	PDF

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