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    506AN Search Results

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    506AN Price and Stock

    GCT Semiconductor Inc BG095-06-A-N-D

    6W, 2.54MM PITCH SOCKET, SIL, TH
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    DigiKey BG095-06-A-N-D Tube 1,853 1
    • 1 $0.6
    • 10 $0.6
    • 100 $0.39263
    • 1000 $0.29164
    • 10000 $0.2304
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    Newark BG095-06-A-N-D Bulk 2,962 1
    • 1 $0.547
    • 10 $0.511
    • 100 $0.397
    • 1000 $0.349
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    Belden Inc 1506A-N3U1000

    CBL COAX PLEN RG-59 20AWG 1000'
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    DigiKey 1506A-N3U1000 1,000
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    • 1000 $3.38439
    • 10000 $3.38439
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    OMRON Industrial Automation R88L-EC-GW-0506-ANPS

    50MM MAGNET IL LM NO CONN
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    DigiKey R88L-EC-GW-0506-ANPS Bulk 1
    • 1 $2096.63
    • 10 $2096.63
    • 100 $2096.63
    • 1000 $2096.63
    • 10000 $2096.63
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    OMRON Corporation R88L-EC-GW-0506-ANPS

    50MM MAGNET IL LM NO CONN - Bulk (Alt: R88LECGW0506ANPS)
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    Avnet Americas R88L-EC-GW-0506-ANPS Bulk 1
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    Global Connector Technology BG095-06-A-N-D

    Board to Board & Mezzanine Connectors 6w, 2.54mm Pitch Socket, SIL, TH, Vert, Dual Beam, GF, Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BG095-06-A-N-D 1,298
    • 1 $0.5
    • 10 $0.393
    • 100 $0.393
    • 1000 $0.291
    • 10000 $0.228
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    Find more 506AN price and stock on Findchips.com

    506AN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC-70-6 package

    Abstract: ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance
    Text: AND8345/D WDFN6 2x2 mCoolt 506AN Dual MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe ON Semiconductor APPLICATION NOTE Introduction Figure 3 depicts a minimum recommended pad pattern that confines an improved thermal area of drain connections


    Original     		PDF AND8345/D 506AN SC-70-6 package ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance

    E2 liu

    Abstract: wdfn6 506AN
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN−01 ISSUE E DATE 20 AUG 2010 SCALE 4:1 D PIN ONE REFERENCE 0.10 C 0.10 C PLATING ÍÍ ÍÍ ÍÍ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.


    Original     		PDF 506AN-01 506AN E2 liu wdfn6 506AN

    NTLJD3119CTAG

    Abstract: NTLJD3119C NTLJD3119CTBG
    Text: NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package


    Original     		PDF NTLJD3119C SC-88 NTLJD3119C/D NTLJD3119CTAG NTLJD3119C NTLJD3119CTBG

    NIS1050MNTBG

    Abstract: NIS1050 6x fet
    Text: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power


    Original     		PDF NIS1050 NIS1050 NIS1050/D NIS1050MNTBG 6x fet

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package


    Original     		PDF NTLJD3181PZ NTLJD3181PZ/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3183CZ Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on in 2x2 mm Package Footprint Same as SC−88 Package


    Original     		PDF NTLJD3183CZ NTLJD3183CZ/D

    NTLJF3118N

    Abstract: NTLJF3118NTAG NTLJF3118NTBG
    Text: NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features •ăWDFN 2x2 mm Package Provides Exposed Drain Pad for V BR DSS Excellent Thermal Conduction


    Original     		PDF NTLJF3118N SC-88 NTLJF3118N/D NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG

    g3je

    Abstract: marking JE 6 pin D15G2 NTLJD3181PZTAG NTLJD3181PZTBG
    Text: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package


    Original     		PDF NTLJD3181PZ SC-88 NTLJD3181PZ/D g3je marking JE 6 pin D15G2 NTLJD3181PZTAG NTLJD3181PZTBG

    NTLJD3115P

    Abstract: NTLJD3115PT1G NTLJD3115PTAG
    Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJD3115P SC-88 NTLJD3115P/D NTLJD3115P NTLJD3115PT1G NTLJD3115PTAG

    Untitled

    Abstract: No abstract text available
    Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent


    Original     		PDF NTLJF3117P SC-88 NTLJF3117P/D

    JH MARKING CODE SCHOTTKY DIODE

    Abstract: No abstract text available
    Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent


    Original     		PDF NTLJF3117P SC-88 NTLJF3117P/D JH MARKING CODE SCHOTTKY DIODE

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJD3115P NTLJD3115P/D

    Untitled

    Abstract: No abstract text available
    Text: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power


    Original     		PDF NIS1050 NIS1050 NIS1050/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJD4150P Power MOSFET −30 V, −3.4 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features http://onsemi.com • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • Excellent Thermal Conduction Footprint Same as SC−88 Package Low Profile < 0.8 mm for Easy Fit in Thin Environments


    Original     		PDF NTLJD4150P NTLJD4150P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction


    Original     		PDF NTLJF4156N NTLJF4156N/D

    NTLJD3115PT1G

    Abstract: tl 72 oz NTLJD3115P NTLJD3115PTAG 6X MOSFET
    Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJD3115P SC-88 NTLJD3115P/D NTLJD3115PT1G tl 72 oz NTLJD3115P NTLJD3115PTAG 6X MOSFET

    6X MOSFET

    Abstract: NCP304 NUS1204MN
    Text: NUS1204MN Product Preview Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to


    Original     		PDF NUS1204MN NCP304 NUS1204MN/D 6X MOSFET

    Untitled

    Abstract: No abstract text available
    Text: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction


    Original     		PDF NTLJF4156N NTLJF4156N/D

    NIS1050

    Abstract: NIS1050MNTBG FET MARKING
    Text: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power


    Original     		PDF NIS1050 NIS1050 NIS1050/D NIS1050MNTBG FET MARKING

    NTLJF3117PTAG

    Abstract: NTLJF3117P NTLJF3117PT1G high current schottky diode
    Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent


    Original     		PDF NTLJF3117P SC-88 NTLJF3117P/D NTLJF3117PTAG NTLJF3117P NTLJF3117PT1G high current schottky diode

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJD3115P SC-88 NTLJD3115P/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction


    Original     		PDF NTLJF4156N NTLJF4156N/D

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3115P Power MOSFET −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS on Solution in 2x2 mm Package


    Original     		PDF NTLJD3115P SC-88 NTLJD3115P/D

    Untitled

    Abstract: No abstract text available
    Text: NVLJD4007NZ Small Signal MOSFET 30 V, 245 mA, Dual, N−Channel, Gate ESD Protection, 2x2 WDFN Package http://onsemi.com Features • • • • • • Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small 2 x 2 mm Footprint


    Original     		PDF NVLJD4007NZ AEC-Q101 NVLJD4007NZ/D