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    501N21 Price and Stock

    IXYS Corporation C-0010-375-501N21A

    RF MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C-0010-375-501N21A Bulk
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    TDK Corporation B82721A2501N21

    Choke, Common Mode, 15 mH, 500 mA - Trays (Alt: B82721A2501N021)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B82721A2501N21 Tray 9 Weeks 600
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    TDK Corporation B82721K2501N21

    Choke, Common Mode, 15 mH, 500 mA - Trays (Alt: B82721K2501N021)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B82721K2501N21 Tray 9 Weeks 720
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    TDK Corporation B82722J2501N21

    Choke, Common Mode, 39 mH, 500 mA - Trays (Alt: B82722J2501N021)
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    Avnet Americas B82722J2501N21 Tray 9 Weeks 540
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    TDK Corporation B82722A2501N21

    Current-Compensated Ring Core Double Choke 39mH 0.5A 1120mOhm 30% Radial Leaded Tray - Trays (Alt: B82722A2501N021)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B82722A2501N21 Tray 9 Weeks 600
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    Find more 501N21 price and stock on Findchips.com

    501N21 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    501N21 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF

    501N21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DE375-501N21A

    Abstract: "RF MOSFETs" 400P
    Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE375-501N21A 50MHz DE375-501N21A "RF MOSFETs" 400P

    Directed Energy

    Abstract: 501N21 DE-375
    Text: PRELIMINARY SPECIFICATIONS DE-375 501N21 21A, 500V, .25Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-375 501N21 150oC Directed Energy 501N21

    400P

    Abstract: DE375-501N21A mosfet SPICE MODEL
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE375-501N21A 50MHz 400P DE375-501N21A mosfet SPICE MODEL

    DE375-501N21A

    Abstract: 400P PIN diode SPICE model
    Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE375-501N21A 50MHz DE375-501N21A 400P PIN diode SPICE model

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original     		PDF DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics

    501N04

    Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
    Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device


    OCR Scan     		PDF DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05