tcd103d

Abstract: TC74HC04P TA8660P ta8660 TCD107D TCD142D tcd142 toshiba tcd ccd toshiba ccd linear dual shift gate DS75365
Contextual Info: 7. Peripheral Circuits 7-1 Timing Generator Circuit T he C C D im age sensor operation needs various pulses that are in synchronous relations, and these pulses are cyclic. The follows are exam ple circuitry for C CD im age sensor. Fig. 7-1 show s an exam ple o f tim ing pulse generator circuit for driving m ainly the

Contextual Info: 2SC3736 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200

footswitch double dpdt

Contextual Info: Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì Ì MADE IN THE USA Full Line Catalog ISO 9001:2000 ∙ FDA 510K CLEARANCE ∙ RoHS ∙ WEEE ∙ UL ∙ CSA ∙ TUV ∙ IEC ∙ IP68 ∙ CE ∙ AP

Contextual Info: 2N4420 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition)

Contextual Info: 2N5772 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition)20

Contextual Info: 2SA1463 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

709 series K Allen-Bradley Starter

Abstract: Allen-Bradley auxiliary contact 595-A Allen-Bradley starter 709 A2JD Allen-Bradley auxiliary contact 595-AB westinghouse contactor 195-FA11 interposing relay 196-fta smp1 OVERLOAD RELAY
Contextual Info: Bulletin 509 NEMA Full Voltage Starters Bulletin 509 D Broad Range of NEMA Sizes 00–9 D Exceptional Electrical Life D UL Certified Type 2 Coordination D Dependable Coil Operation D Cost Saving Design D SMP–1 or SMP–3 Solid-State Overload Relays

Contextual Info: PN3646 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition)

Contextual Info: 2N3831 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)70 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.35 h(FE) Max. Current gain.

Contextual Info: BSS44 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)65 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)870m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N4421 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.

Contextual Info: 2N4422 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition)